Wednesday, 19 August 2015 14:32 |
The 11th International Conference on Nitride Semiconductors (ICNS-11) will be held in Beijing, China. Our colleagues will present their results during this important gathering of the nitride community. An invited lecture will be given by Michal Bockowski (Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds). Three oral presentations will be delivered during Growth sessions: HVPE growth of GaN doped with silicon by Paweł Kempisty, HVPE-GaN growth on GaN-based advanced substrates by Smart Cut™ by Gosia Iwińska, and Long living blue laser diodes grown by plasma assisted molecular beam epitaxy by Grzegorz Muzioł. We will be represented at the Optical Devices sessions by Tadeusz Suski (Hydrostatic pressure in studies of basic properties of polar InGaN/GaN light emitters) and Henryk Turski (Staggered high indium content InGaN quantum wells grown by PAMBE). Eight posters showing our results will be presented during the poster session.
Wednesday, 19 August 2015 14:28 |
Two invited lectures were delivered in August by our coworker, Michal Bockowski. The first one was at a joint session of the 20th American Conference on Crystal Growth and Epitaxy (ACCGE-20) and the 17th U.S. Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-17) which were held in Big Sky, Montana, USA. The title of the presentation was HVPE-GaN growth on ammonothermal GaN seeds - challenges and perspectives. More information on the conference website.
The second invited talk, titled Challenges and future perspectives in HVPE-GaN growth, was given during the SPIE Optics and Photonics Conference in San Diego, California.
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