Program Schedule
6th International
Workshop on Bulk Nitride Semiconductors - Galindia
2009
SUNDAY, August 23th, 2009
11:00 Departure
from Warsaw IBIS Stare Miasto Hotel to Galindia Hotel (Conference site)
12:30 Lunch
in Pazibroda Restaurant in Maków
Mazowiecki
17:00 Arrival
to Galindia Hotel
19:00 Dinner
MONDAY, August 24th, 2009
7:00 - 8:15 Breakfast
8:30 - 9:00 Welcome and orientation
Jaime
Freitas
Michał Boækowski
9:00 - 10:20 Session 1: GaN by Ammonothermal method 1
Chair:
Zlatko Sitar
9:00 - 9:30 Robert Dwiliński -
scene setter,
Recent Achievements in AMMONO-bulk
method
9:30 - 10:00 Tadao Hashimoto - scene setter, Six Point Material Inc.,
Improvement
of crystal quality in ammonothermal growth of bulk GaN
10:00 - 10:30 Buguo Wang - scene setter,
Crystallographic properties of GaN
bulk crystals grown by the ammonothermal technique
10:30 - 10:50 Coffee Break
10:50 - 12:20 Session 2: GaN
by Ammonothermal method 2
Chair:
Mike Leszczyński
10:50 - 11:20 Makoto Saito -
scene setter,
Evaluation of GaN Crystals Grown in Supercritical Basic Ammonia
11:20 - 11:40 Siddha Pimputkar,
Plane Dependence of GaN Grown by the Ammonothermal
Method
11:40 - 12:00 Roman Doradziński, Ammono, Poland
Non-polar
AMMONO-GaN
12:00 - 12:20 Dirk Ehrentraut,
Ammonothermal growth of GaN
12:30 - 14:00 Lunch
14:00 - 15:10 Session 3: AlN
Bulk crystals
Chair:
Jim Speck
14:00 - 14:30 Zlatko Sitar -
scene setter,
Challenges
in AlN crystal growth and path to the AlN wafers
14:30 - 14:50 Boris Epelbaum, Univ.
Growth direction and polarity
influence on properties of bulk aluminum nitride crystals
14:50 - 15:10 Octavian Filip, Univ. Erlangen-Nurnberg,
Germany,
15:10 - 15:20 Break
15:20 - 16:30 Session 4: Defects in bulk AlN
Chair:
Zuzanna Liliental-Weber
15:20 - 15:50 James H. Edgar
- scene setter, Kansas State Univ., USA
Characterization of
sublimation grown bulk AlN crystals
15:50 - 16:10 Martin
Albrecht, IKZ,
Cation vacancy related donor acceptor pair transitions in
bulk AlN
16:10 - 16:30 Keiichiro Hironaka, Tokuyama Co., Japan
Characterization of AlN single crystals
16:30 - 16:50 Coffee Break
16:50 - 18:40 Session 5: Bulk AlN by template seeding
Chair:
Boris Epelbaum
16:50 - 17:20 Hideto Miyake - scene setter,
Growth of high quality AlN on patterned substrate
by HVPE
17:20 - 17:40 Reza Yazdi, Linkoping Univ., Sweden
Pyramid enabled growth and
separation of AlN wafers
17:40 - 18:00 Carsten Hartmann,
IKZ,
Initial growth stages of the
hetero-epitaxial PVT growth of AlN on miscut 4H-SiC substrates
18:00 - 18:20 Tadashi Ohashi, Doshisha Univ., Japan
Growth of 2H-AlN films on Si(111) grown by RF-MBE using an interface reaction epitaxy and AM-MEE for HVPE growth
18:20 - 18:40 Yoshinao Kumagai, TUAT,
Investigation of void
formation beneath thin AlN layers by decomposition of
sapphire substrates for self-separation of thick AlN
layers grown by HVPE
19:00 - 21:00 Dinner
TUESDAY, August 25th, 2009
7:30 - 8:30 Breakfast
9:00 - 10:30 Session 6: Bulk GaN and AlN by HVPE
Chair:
Tadek Suski
9:00 - 9:30 Akinori Koukitu - scene
setter, TUAT,
Investigation
of source precursor for AlN-HVPE to decrease
Si-contamination
9:30
- 9:50 Bernd Schineller, AIXTRON AG,
VHVPE
for GaN boule growth: New
hardware optimizations and recent experimental results
9:50 - 10:10 Eberhard Richter,
Ferdinand Braun Institut,
VHVPE for GaN boule growth: Growth results and material properties
10:10 - 10:30 Coffee
Break
10:30 - 12:00 Session 7: Bulk GaN by HVPE and VPE
Chair:
Akinori Koukitu
10:30 - 11:00
The
growth of Bulk GaN by Hydride Vapor Phase Epitaxy
(HVPE)
11:00 - 11:20 Yun Komiyama,
Covalent Material Corporation and TUAT,
Thick
film of SiC and GaN grown on
Si by vapor phase epitaxy
11:20 - 11:40 Paul Hageman,
Chlorine
based HVPE for the growth of thick GaN layers
11:40 - 12:00 Stanisław Krukowski, IHPP Unipress, Warsaw, Poland
GaN(0001) surface in ammonia-dominated
ambient: static and dynamic DFT study
12:30 - 14:30 Lunch
14:30 - 15:10 Session 8: Non-polar GaN by HVPE
Chair:
Paul Hageman
14:30 - 14:50 Hyun-Jae Lee,
Interface engineering in HVPE growth of Free-standing GaN
14:50 - 15:10 Bolesław Łucznik, IHPP
Non-polar
HVPE GaN as seed for solution growth under pressure
15:10 - 15:30 Coffee
Break
15:30 - 17:20 Session 9: InGaN
and
Chair:
Jaime Freitas
15:30 - 16:00 Yoichi Kawakami
- scene setter,
Recombination dynamics in semi-polar {11-22} InGaN/GaN quantum wells
16:00 - 16:20 Czesław Skierbiszewski, IHPP Unipress, Poland
Optically
pumped InAlGaN lasers at 480 nm by Plasma Assisted
MBE
16:20 - 16:40 Tadek Suski, IHPP Unipress, Poland
Substrate orientation
dependent properties of InGaN
16:40 - 17:00 Yuhuai Liu,
Perspective
in growth of high-quality
17:00 - 17:20 Stephan Figge,
Self organized grown InGaN quantum dots on hetero- and homoepitaxial
substrates
17:20- 17:40 Coffee Break
17:40 - 18:50 Session 10: Devices on bulk
nitride substrates
Chair: Yoichi Kawakami
17:40 - 18:10 Jim Speck - scene setter,
Progress in the
Growth, Characterization and Device Performance for Nonpolar
and Semipolar GaN-based
Materials
18:10 - 18:30 Wojtek Knap,
Univ.
Terahertz plasma
oscillations in nanometer size GaN/AlGaN transistors
18:30 - 18:50 Michał Leszczyński, IHPP, Unipress, Poland
Morphology
and microstructure of AlInGaN layers
used in constructing violet laser diodes
19:00 - 21:00 Dinner
Wednesday, August 26th, 2009
7:30 - 8:30 Breakfast
9:00 - 10:30 Session 11: GaN by Low Pressure Solution method
Chair: Sylwester Porowski
9:00 - 9:30 Boris Feigelson - scene setter,
Growth of bulk GaN crystals from solution at near atmospheric pressure
9:30 - 9:50 Nelson Garces,
Characterization of bulk GaN crystals from solution at near atmospheric pressure
9:50 - 10:10 Jaime Freitas,
Optical probing of solution
growth crystal properties
10:10 - 10:30 Elke Meissner,
Liquid
Phase Epitaxy of GaN on AlN and considerations on substrate preparation
10:30 - 10:50 Coffee
Break
10:50
- 12:00 Session 12:
GaN and AlN by Flux
methods,
Chair: Roman Doradziński
10:50 - 11:20 Yoshihiro Kangawa -
scene setter, RIAM,
Possibility
of AlN growth using Li-Al-N solvent
11:20:11:40 Young Kuk Lee, Korea Res. Inst. of Chem.
Growth of ZnO and GaN Single Crystal by Solvothermal
Technique
11:40 -
12:00 Michał Boækowski, IHPP Unipress, Poland
Ca3N2
as a flux for crystal growth of GaN under high
pressure
12:30 - 14:00 Lunch
14:00 Group
outgoing:-kayaking by
See: http://www.masuria-canoeing.com/krutynia_en/index.html
19:00 Dinner
on location with camp-fire in Galindia Hotel
Thursday, August 27th, 2009
8:00 - 9:00 Breakfast
9:20
- 10:50 Session
13: GaN and AlGaN by
High Pressure Solution method
Chair: Boris Feigelson
9:20 - 9:50 Andrey Belousov - scene
setter,
ETH
High pressure thermodynamics and crystal
growth of AlxGa1-xN.
9:50 - 10:10 Andrey Belousov, ETH
Single crystals of AlxGa1-xN: high pressure growth and properties
10:10 -
10:30 Sylwester Porowski, IHPP Unipress, Poland
High Pressure GaN crystals on HVPE GaN seeds as substrates for laser diodes
10:30 -
10:50 Izabella Grzegory, IHPP Unipress, Poland
The influence of Indium on
the growth of GaN crystals from solution
10:50 - 11:10 Coffee
Break
11:10
- 13:00 Session 14:
Defects in nitrides,
Chair: Martin Albrecht
11:10 - 11:40 Zuzanna Liliental-Weber - scene
setter,
Extended defects in III-Nitrides and their origin
11:40 - 12:00 Jaime Freitas,
On the
properties of thick GaN
homoepitaxial films
12:00 - 12:20 Filip Tuomisto, Helsinki Univ. Of Technology, Finland
Formation
of point defects in ammonothermal growth of GaN
12:20 - 12:40 Jan Weyher, IHPP
Extended
defects in HVPE-grown GaN
12:40 - 13:00 Joachim Woitok, PANalytical, The
X-ray scattering methods for the
structural characterization of bulk
single crystals
13:00 - 15:00 Lunch
15:00
- 16:45 Rump session : Market trends in wide band gap semiconductor
materials and closing of the IWBNS-6
Chair:
Dirk Ehrentraut
15:00 - 15:20 Hank Rodeen, Strategies Unlimited,
Markets,
Manufacturability, and Cost Reduction (SiC, GaN, AlN) (2009)
15:20 - 15:30 Izabella Grzegory,
IHPP
Summary of the
Workshop - Highlights from the Program
15:30 - 16:30 Panel Discussion
16:30 - 16:45 Conference
Chairpersons
Summary
and closing of the IWBNS-6
18:00-22:00 Galindówka with Official Dinner
22:00- Discotheque
Friday, August 28th, 2009
8:30 - 9:30 Breakfast
11:00
Departure
from Galindia Hotel to Warsaw IBIS Stare Miasto Hotel
12:00 Lunch
in Tusinek Restaurant
17:00 Arrival
to Warsaw IBIS Stare Miasto Hotel
