Scene Setter Speakers
- Andrey Belousov
- Thermodynamics of the Ga-Al-N system at high N2 pressure
- ETH Zurich, Swiss
- Robert Dwiliński
- Recent Achievements in AMMONO-bulk method
- Ammono Sp. z o.o., Poland
- James H. Edgar
- Impurities and Defects in Bulk Aluminum Nitride Crystals
- Kansas State Univ., USA
- Boris Feigelson
- Growth of bulk GaN crystals from solution at near atmospheric pressure
- US NRL, USA
- Tadao Hashimoto
- Improvement of crystal quality in ammonothermal growth of bulk GaN
- SixPoint Materials, Inc., USA
- Yoshihiro Kangawa
- Possibility of AlN growth using Li-Al-N solvent
- RIAM, Kyushu Univ., Japan
- Yoichi Kawakami
- Recombination dynamics in semi-polar 11-22 InGaN-GaN quantum wells
- Kyoto University, Japan
- Akinori Koukitu
- Investigation of source precursor for AlN-HVPE to decrease Si-contamination
- TUAT, Japan
- Zuzanna Liliental-Weber
- Structural changes in InGaN with increasing In content and thickness
- LBNL, USA
- Hideto Miyake
- HVPE growth of high-quality AlN on trench-patterned substrate
- Mie University, Japan
- Sungsoo Park
- The growth of bulk GaN by HVPE
- Samsung Electronic, Co, South Korea
- Hank Rodeen
- Markets, Manufacturability, and Cost Reduction (SiC, GaN, AlN)" (2009)
- Strategies Unlimited, USA
- Makoto Saito
- Plane dependent growth of GaN in supercritical basic ammonia and evaluation of GaN substrates
- UCSB, USA
- Zlatko Sitar
- Challenges in AlN crystal growth and path to the AlN wafers
- HexaTech, Inc., USA
- Jim Speck
- LEDs and LDs on non-polar and semi-polar GaN substrates
- UCSB, USA
- Buguo Wang
- Crystallographic properties of GaN bulk crystals grown by the ammonothermal technique
- Air Force, USA
