N-side Project „Polar GaN substrates with active N-side manufacturing and evaluation of its usefulness in epitaxy”
Applied Research Programme of the National Centre for Research and Development is a horizontal programme aimed at supporting the science sector and the industry sector within the scope of applied research in various scientific fields (programme path A) and industry branches (programme path B).
The goal of this project is to manufacture polar GaN substrates with active N-side and to evaluate its usefulness in
epitaxy. Application of N-side is a new approach, since typically substrates have active Ga-side. Epitaxy on N-side, optimized morphology-wise, offers a number of advantages compared to widespread Ga-side epitaxy to name few, obtaining higher hole concentration in p-type layer increases efficiency of optoelectronic devices with N-polarity, and AlGaN layer is a natural energetic barrier facilitating better composition and localization of 2DEG in GaN channel. The abovementioned advantage and other, together with advantages of ammonothermal method (low dislocation density, high crystal curvature radius, scalability) may lead to generation of highly efficient optoelectronic and electronic devices.
ITME - Institute of Electronic Materials Technology.
Publications and Conference Contributions
Project is realized from 2017 to 2019
Project results have been published in:
"Comparison of the luminous efficiency of Ga- and N-polar InxGa1-xN/InyGa1-yN quantum wells grown by plasma-assisted molecular beam epitaxy" S. Fernández-Garrido, J. Lähnemann, C. Hauswald, M. Korytov, M. Albrecht, C. Chèze, C. Skierbiszewski, O. Brandt, Physical Review Applied, 6 034017 (2016), link
"Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range" R. Kucharski, Ł. Janicki, M. Zajac, M. Welna, M. Motyka, C. Skierbiszewski and R. Kudrawiec, Crystals 7, 187 (2017); doi:10.3390/cryst7070187
"Jaszowiec 2017" 46th International School & Conference on the Physics of Semiconductors, Szczyrk, Poland, June 17th - 23rd, 2017, "The Digital Alloy of InN/InGaN Superlattices Grown by Plasma Assisted MBE" M. Siekacz, P. Wolny, G. Staszczak, T. Suski, E. Grzanka, I. Gorczyca, T. Ernst, M. Anikeeva, T. Schulz, M. Albrecht and C. Skierbiszewski
"Jaszowiec 2017" 46th International School & Conference on the Physics of Semiconductors, Szczyrk, Poland, June 17th - 23rd, 2017, "Step Flow Growth Mode of N-polar Ga(In)N Structures under N-rich conditions in Plasma-Assisted MBE" H. Turski, A. Feduniewicz-Żmuda, C. Cheze, M. Sawicka, F. Krzyżewski, M. Załuska-Kotur, M. Siekacz, G. Muzioł, K. Szkudlarek, C. Skierbiszewski