N-side Project
„Polar GaN substrates with active N-side manufacturing and evaluation of its usefulness in epitaxy”

Programme Description

Applied Research Programme of the National Centre for Research and Development is a horizontal programme aimed at supporting the science sector and the industry sector within the scope of applied research in various scientific fields (programme path A) and industry branches (programme path B).

Project Goal

The goal of this project is to manufacture polar GaN substrates with active N-side and to evaluate its usefulness in epitaxy. Application of N-side is a new approach, since typically substrates have active Ga-side. Epitaxy on N-side, optimized morphology-wise, offers a number of advantages compared to widespread Ga-side epitaxy to name few, obtaining higher hole concentration in p-type layer increases efficiency of optoelectronic devices with N-polarity, and AlGaN layer is a natural energetic barrier facilitating better composition and localization of 2DEG in GaN channel. The abovementioned advantage and other, together with advantages of ammonothermal method (low dislocation density, high crystal curvature radius, scalability) may lead to generation of highly efficient optoelectronic and electronic devices.

Research Team

• prof. dr hab. Czesław Skierbiszewski - Project Leader
• dr Henryk Turski
• dr inż. Marcin Siekacz
• dr inż. Marta Sawicka
• mgr Anna Feduniewicz-Żmuda
  
  

Collaboration

Project is carried out in collaboration with the following Partners:

• Ammono S.A - the world leader in truly bulk Gallium Nitride (GaN) manufacturing;
• Laboratory for Optical Spectroscopy of Nanostructures - Department of Experimental Physics Wrocław University of Technology;
• ITME - Institute of Electronic Materials Technology.

Publications and Conference Contributions

Project is realized from 2017 to 2019

Project results have been published in:

1. F. Krzyżewski, M. A. Załuska-Kotur, H. Turski, M. Sawicka, C. Skierbiszewski, “Miscut dependent surface evolution in the process of N-polar GaN(000-1) growth under N-rich condition”, Journal of Crystal Growth 457 (2017) 38–45, IF=1.74
2. M. Gladysiewicz, L. Janicki, M. Siekacz, G. Cywinski, C. Skierbiszewski, and R. Kudrawiec, “Theoretical and experimental studies of electric field distribution in N-polar GaN/AlGaN/GaN heterostructures”, Applied Physics Letters 107, 262107 (2016), IF=3.49, M. Gladysiewicz, L. Janicki, M. Siekacz, G. Cywinski, C. Skierbiszewski, and R. Kudrawiec, Erratum: “Theoretical and experimental studies of electric field distribution in N‐ polar GaN/AlGaN/GaN heterostructures" [Appl. Phys. Lett. 107, 262107 (2016)]" APL18-ER-06811
3. C. Chèze, F. Feix, J. Lähnemann, T. Flissikowski, M. Kryśko, P. Wolny, H. Turski, C. Skierbiszewski, and O. Brandt, "Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C", Appl. Phys. Lett. 112, 022102 (2018), IF=3.49
4. Sergio Fernández-Garrido, Jonas Lähnemann, Christian Hauswald, Maxim Korytov, Martin Albrecht, Caroline Chèze, Czesław Skierbiszewski, and Oliver Brandt, "Comparison of the Luminous Efficiencies of Ga- and N-Polar InxGa1−xN/InyGa1−yN Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy", Physical Review Applied 6, 034017 (2016), link IF=4.78
5. Robert Kucharski, Łukasz Janicki, Marcin Zajac, Monika Welna, Marcin Motyka, Czesław Skierbiszewski and Robert Kudrawiec, "Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range" Crystals 7, 187 (2017) doi:10.3390/cryst7070187. IF=2.14
6. Grzegorz Muziol, Henryk Turski, Marcin Siekacz, Szymon Grzanka, Piotr Perlin, and Czesław Skierbiszewski, "Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide", Applied Physics Express 9, 092103 (2016), IF=2.55
7. G. Muziol, H. Turski, M. Siekacz, P. Wolny, J. Borysiuk, S. Grzanka, P. Perlin, and C. Skierbiszewski, "Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties", Optics Express 25, 33113 (2017), IF= 3.35
8. Henryk Turski, Grzegorz Muzioł, Marcin Siekacz, Pawel Wolny, Krzesimir Szkudlarek, Anna Feduniewicz-Zmuda, Krzysztof Dybko, Czeslaw Skierbiszewski, “Growth rate independence of Mg doping in GaN grown by plasma assisted MBE”, Journal of Crystal Growth 482 (2018) 56–60, IF=1.74
9. C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, "True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy", Applied Physics Express 11, 034103 (2018), IF=2.55
10. M. Sawicka, P. Wolny, M. Kryśko, H. Turski, K. Szkudlarek, S. Grzanka, C. Skierbiszewski, "Comparative study of semipolar (20-21), nonpolar (10-10) and polar (0001) InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy", Journal of Crystal Growth 465 (2017) 43–47, IF=1.74
11. M. Sawicka, A. Feduniewicz-Żmuda, M. Kryśko, H. Turski, G. Muziol, M. Siekacz, P. Wolny, C. Skierbiszewski, "Indium incorporation in semipolar (20-21) and nonpolar (10-10) InGaN grown by plasma assisted molecular beam epitaxy", Journal of Crystal Growth 459 (2017) 129–134, IF=1.74
    
    

Conference presentations:

• M. Siekacz, P. Wolny, G. Staszczak, T. Suski, E. Grzanka, I. Gorczyca, T. Ernst, M. Anikeeva, T. Schulz, M. Albrecht and C. Skierbiszewski "The Digital Alloy of InN/InGaN Superlattices Grown by Plasma Assisted MBE" "Jaszowiec 2017" 46th International School & Conference on the Physics of Semiconductors, Szczyrk, Poland, June 17th - 23rd, 2017,
• H. Turski, A. Feduniewicz-Żmuda, C. Cheze, M. Sawicka, F. Krzyżewski, M. Załuska-Kotur, M. Siekacz, G. Muzioł, K. Szkudlarek, C. Skierbiszewski "Step Flow Growth Mode of N-polar Ga(In)N Structures under N-rich conditions in Plasma-Assisted MBE" "Jaszowiec 2017" 46th International School & Conference on the Physics of Semiconductors, Szczyrk, Poland, June 17th - 23rd, 2017,
• C. Skierbiszewski, G. Muziol, H. Turski and M. Siekacz, "Aluminum free nitride laser diodes grown by plasma assisted MBE", 74th Device Research Conference (DRC 2016), June 19-22, 2016, Newark, Delaware - invited talk
• C. Skierbiszewski, G. Muziol, M. Siekacz, H. Turski, M. Sawicka, J. Borysiuk, P. Perlin, E. Grzanka, B. Łucznik, I. Grzegory „Nitride based laser diodes grown by high nitrogen flux plasma assisted molecular beam epitaxy (PAMBE)” International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2016) March 2016, Nagoya University, Japan – invited talk
• G. Muziol, M. Siekacz, H. Turski, S. Grzanka, M. Krysko, J.Borysiuk, P. Perlin and C. Skierbiszewski “Aluminum-free 450 nm nitride laser diodes grown by plasma assisted molecular beam epitaxy”, 19th International Conference on Molecular-Beam Epitaxy, Montpelier 2016, France - oral presentation
• H. Turski, A. Feduniewicz-Żmuda, M. Sawicka, C. Cheze, F. Krzyżewski, M. Załuska-Kotur, S. Grzanka, M. Siekacz, G. Muzioł, K. Szkudlarek, C. Skierbiszewski “Growth of N-polar GaN under N-rich conditions in Plasma-Assisted MBE” International Workshop on Nitride Semiconductors (IWN 2016) October 2-7, 2016 Orlando, Florida - oral presentation
• H. Turski, A. Feduniewicz-Żmuda, C. Cheze, M. Sawicka, F. Krzyżewski, M. Załuska-Kotur, M. Siekacz, G. Muziol, K. Szkudlarek, C. Skierbiszewski „Step Flow Growth Mode of N-polar Ga(In)N Structures under N-rich conditions in Plasma-Assisted MBE” 45th Jaszowiec International School and Conference on Physics of Semiconductors , Szczyrk Poland June , 2016 – poster presentation
• M. Siekacz, G. Staszczak, T. Suski, E. Grzanka, I. Gorczyca, H. Turski, T. Ernst, M. Anikeeva, T. Schulz, M. Albrecht and C. Skierbiszewski , “The Impact of Barrier Width on Photoluminescence Wavelength in InGaN/InGaN Short Period Superlattices Grown by Plasma Assisted MBE” International Workshop on Nitride Semiconductors, Orlando 2016 - oral presentation
• H. Turski, “Smooth Surface During Nitrogen-rich Growth of N-polar Ga(In)N Structures” Sympozjum Kalatówki 2016 - oral presentation
  • H. Turski, M. Siekacz, G. Muziol, P. Wolny, S. Grzanka, E. Grzanka, M. Baranowski, R. Kudrawiec, C. Skierbiszewski, „Green light emitting quantum wells grown by PAMBE” Mauterndorf 2016 Austria - poster presentation
• H. Turski, A. Feduniewicz-Żmuda, J. Smalc-Koziorowska, P. Wolny, A. Reszka, D. Jena, C. Skierbiszewski, “Nitrogen-rich growth of Atomically Smooth N-polar GaN Layers by Plasma-assisted MBE”, International Conference of Nitride Semiconductors 12, Strassbourg 2017 - poster presentation
• G. Muziol, M. Siekacz, H. Turski, S. Grzanka, P. Perlin, C. Skierbiszewski ‘ „True-blue nitride laser diodes with low internal optical losses grown by PAMBE” 19th International Winterschool on New Developments in Solid State Physics, Mauterndorf, Austria - poster presentation
• G. Muziol, M. Siekacz, H. Turski, S. Grzanka, M. Krysko, J.Borysiuk, P. Perlin, and C. Skierbiszewski, „Aluminum-free blue laser diodes grown by plasma assisted molecular beam epitaxy”, International Workshop on Nitride Semiconductors (IWN 2016) Orlando, USA - oral presentation
• G. Muziol, H. Turski, M. Siekacz, P. Wolny, S. Grzanka, P. Perlin, and C. Skierbiszewski, ”Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide”, Compound Semiconductor Week 2017 Berlin, Niemcy - oral presentation
• Henryk Turski, Filip Krzyżewski, Anna Feduniewicz-Żmuda, Pawel Wolny, Marcin Siekacz, Grzegorz Muzioł, Huili (Grace) Xing, Debdeep Jena, Magdalena A. Załuska-Kotur, Czesław Skierbiszewski, “Unusual impact of Ehrlich-Schwoebel Barrier on Meandering of Atomic Step Edges during N-polar growth of GaN by PAMBE” Electronic Materials Conference, Santa Barbara 2018 - oral presentation
• G. Muziol, M. Siekacz, H. Turski, S. Grzanka, M. Krysko, J.Borysiuk, P. Perlin and C. Skierbiszewski, „Droga do azotkowych diody laserowych bez dodatku glinu” 17.01.2017 Seminarium Katedry Fizyki Doświadczalnej, Wydział Podstawowych Problemów Techniki Politechnika Wrocławska, seminar talk
• R. Kudrawiec, Contactless electroreflectance spectroscopy of III-N heterostructures: The built-in electric field and Fermi-level position at the Surface, E-MRS Fall Meeting, 21 September 2017, Warsaw, Poland - invited talk
• Ł. Janicki, M. Gladysiewicz, K. Kulinowski, H. Li, S. Keller, U. K. Mishra, and R. Kudrawiec, Electromodulation Spectroscopy of N-polar GaN HEMT Structures, International Workshop on Nitride Semiconductors, 2-7 October 2016, Orlando, United States, - oral presentation