Publications in scientific journals

2024
1. Konrad Sakowski, Lukasz Borowik, Nevine Rochat, Pawel Kempisty, Pawel Strak, Natalia Majewska, Sebastian Mahlik, Kamil Koronski, Tomasz Sochacki, Jacek Piechota, Marc Fouchier, Agata Kaminska, Stanislaw Krukowski
   On method of estimating recombination rates by analysis of time-resolved luminescence
   Journal of Luminescence - 26 January 2024; 269: 120473
   2023
2. Jacek Piechota, Stanislaw Krukowski, Bohdan Sadovyi, Petro Sadovyi, Sylwester Porowski and Izabella Grzegory
   Melting vs Decomposition of GaN: ab initio Molecular Dynamics Study and comparison to the experimental data
   ACS Chemistry of Materials - 18 September 2023; 35:7694 - 7707

3. Pawel Kempisty, Ashfaq Ahmad, Pawel Strak, Konrad Sakowski, Anna Kafar, Jacek Piechota, and Stanislaw Krukowski
   Incorporation of indium into GaN layers in the context of MOVPE thermodynamics and growth - ab initio studies
   Computational Materials Science - 11 September 2023; 230:112489

4. Ashfaq Ahmad, Pawel Strak, Pawel Kempisty, Konrad Sakowski, Jacek Piechota, Yoshihiro Kangawa, Izabella Grzegory, Michal Leszczynski, Zbigniew R. Zytkiewicz, Grzegorz Muziol, Eva Monroy, Agata Kaminska, and Stanislaw Krukowski
   Polarization doping in GaN-InN System - ab initio simulation
   Materials - 31 January 2023; 16:1227
   2022

5. Ashfaq Ahmad, Pawel Strak, Konrad Sakowski, Jacek Piechota, Pawel Kempisty, Agata Kaminska, and Stanislaw Krukowski
   Optical properties of polar and nonpolar GaN/AlN multiquantum well systems - DFT study
   Journal of Applied Physics - 16 October 2022; 132: 164306

6. Stanislaw Krukowski, Konrad Sakowski, Pawel Strak, Pawel Kempisty, Jacek Piechota, and Izabella Grzegory
   Macrosteps dynamics and the growth of crystals and epitaxial layers
   Progress in Crystal Growth and Characterization of Materials - 6 September 2022; 68 :100581

7. Ashfaq Ahmad, Pawel Strak, Pawel Kempisty,2, Konrad Sakowski, Jacek Piechota, Yoshihiro Kangawa, Izabella Grzegory, Michal Leszczynski, Zbigniew R. Zytkiewicz, Grzegorz Muziol, Eva Monroy, Agata Kaminska, and Stanislaw Krukowski
   Polarization doping - ab initio verification of the concept: charge conservation and nonlocality
   Journal of Applied Physics - 19 May 2022; 132:064301

8. Kamil Koronski, Krzysztof P. Korona, Serhii Kryvyi, Aleksandra Wierzbicka, Kamil Sobczak, Stanislaw Krukowski, Pawel Strak, Eva Monroy, Agata Kaminska
   The role of the built-in electric field in recombination processes of GaN/AlGaN quantum wells: temperature- and pressure-dependent study of polar and non-polar structures
   Materials - 8 April 2022; 15:2756

9. Pawel Strak, Ashfaq Ahmad, Pawel Kempisty, Jacek Piechota, Konrad Sakowski, Grzegorz Nowak, Yoshihiro Kangawa, Jan Łażewski, Stanislaw Krukowski
   Al coverage of AlN(0001) surface and Al vapor pressure - Thermodynamic assessment based on ab initio calculations
   Computational Materials Science - 15 February 2022; 203:111159

10. Anna Kafar, Atsushi Sakaki, Ryota Ishii, Kanako Shojiki, Szymon Stanczyk, Krzysztof Gibasiewicz, Grzegorz Staszczak, Dario Schiavon, Szymon Grzanka, Stanislaw Krukowski, Tadeusz Susuki, Piotr Perlin, Mitsuru Funato, Yoichi Kawakami
    Structural and emission improvement of cyan-emitting InGaN quantum wells by introducing large substrate misorientation angle
    Optical Materials Express - 1 January 2022; 12:119
    2021
11. Ashfaq Ahmad, Pawel Strak, Kamil Koronski, Pawel Kempisty, Konrad Sakowski, Jacek Piechota, Izabella Grzegory, Aleksandra Wierzbicka, Serhii Kryvyi, Eva Monroy, Agata Kaminska, Stanislaw Krukowski
    Critical evaluation of various spontaneous polarization models and induced electric fields in III-nitride multi-quantum wells
    Materials - 30 August 2021; 14: 4395

12. Kosuke Sato, Kazuki Yamada, Konrad Sakowski, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Yoshihiro Kangawa, Pawel Kempisty, Stanislaw Krukowski, Jacek Piechota, Isamu Akasaki
    Effects of Mg dopant in Al-composition-graded Al_xGa_1-xN (0.45 ≤ x) on vertical electrical conductivity of ultrawide bandgap AlGaN p-n junction
    Applied Physics Express - 27 August 2021; 14:096503

13. Pawel Strak, Konrad Sakowski, Jacek Piechota, Ashfaq Ahmad, Izabella Grzegory, Yoshihiro Kangawa, and Stanislaw Krukowski
    Adsorption of nitrogen at AlN(000-1) surface - decisive role of structural and electronic factors
    Surface Science - 11 June 2021;713:121791

14. Jacek Piechota, Stanislaw Krukowski, Petro Sadovyi, Bohdan Sadovyi, Sylwester Porowski, and Izabella Grzegory
    Nitrogen Dissolution in Liquid Ga and Fe: Comprehensive Ab Initio Analysis. Relevance for Crystallization of GaN
    Materials - 9 March 2021;14:1306
    2020

15. Agata Kaminska, Kamil Koronski, Pawel Strak, Aleksandra Wierzbicka, Marta Sobanska, Kamil Klosek, Dmitrii V. Nechaev, Vladimir Pankratov, Kirill Chernenko, Stanislaw Krukowski, and Zbigniew R. Zytkiewicz
    Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers: experimental and ab initio analysis
    Applied Physics Letters - 7 December 2020; 117:232101

16. Konrad Sakowski, Kazuki Yamada, Kosuke Sato, Pawel Kempisty, Motoaki Iwaya, Hideto Miyake, Pawel Strak, Akira Kusaba, Yoshihiro Kangawa, and Stanislaw Krukowski
    Estimating efficiency of AlGaN light-emitting diodes with numerical simulations
    Journal of Japanese Association for Crystal Growth - 28 October 2020; 47: 05

17. Pawel Kempisty, Pawel Strak, Konrad Sakowski, Yoshihiro Kangawa, and Stanislaw Krukowski
    Ab initio and thermodynamic picture of Al adsorption of AlN(0001) surface - role of bond creation and electron transition contributions
    Applied Surface Science - 03 August 2020; 532:147719

18. Agata Kaminska, Kamil Koronski, Pawel Strak, Kamil Sobczak, Eva Monroy, and Stanislaw Krukowski
    Wurtzite quantum well structures under high pressure
    Journal of Applied Physics - 03 August 2020; 128:050901

19. Kamil Sobczak, Jolanta Borysiuk, Pawel Strak, Rafal Jakiela, Kamil Koroński, Agata Kaminska, Eva Monroy, and Stanislaw Krukowski
    Detection of Si doping in the AlN/GaN MQW using Super X - EDS measurements
    Micron - 30 March 2020; 134: 102864

20. Pawel Strak, Kamil Koronski, Konrad Sakowski, Kamil Sobczak, Jolanta Borysiuk, Krzysztof P. Korona, Piotr A. Drózdz, Ewa Grzanka, Marcin Sarzynski, Andrzej Suchocki, Eva Monroy, Stanislaw Krukowski, and Agata Kaminska
    Instantaneous decay rate analysis of time resolved photoluminescence (TRPL): application to nitrides and nitride structures
    Journal of Alloys and Compounds - 16 January 2020; 823: 153791
    2019

21. Agata Kaminska, Izabela Gorczyca, Henryk Teisseyre, Pawel Strak, Stanislaw Krukowski, and Andrzej Suchocki
    High pressure studies of radiative recombination processes in nitride semiconductor alloys and quantum structures
    Japanese Journal of Applied Physics - 7 November 2019; 59: SA0802

22. Takahiro Kawamura, Yuma Fujita, Yuya Hamaji, Toru Akiyama, Yoshihiro Kangawa, Izabela Gorczyca, Tadeusz Suski, Małgorzata Wierzbowska, and Stanisław Krukowski
    First-Principles Calculation of Bandgaps of Al_1-xIn_xN Alloys and Short-Period Al_1-xIn_xN/Al_1-yIn_yN Superlattices
    Physica Status Solidi (b) - 11 October 2019; : 190530

23. Jan Lazewski, Pawel T. Jochym, Przemyslaw Piekarz, Malgorzata Sternik, Krzysztof Parlinski, Jan Cholewinski, Pawel Dluzewski, Stanislaw Krukowski
    DFT modelling of the edge dislocation in 4H-SiC
    Journal of Materials Science - 26 April 2019; 54: 10737 - 10745

24. Pawel Strak, Konrad Sakowski, Pawel Kempisty, Izabella Grzegory, Stanislaw Krukowski
    Catalytic Synthesis of Nitric Monoxide at AlN(0001) Surface: Ab Initio Analysis
    Journal of Physical Chemistry C - 27 March 2019; 123: 10893 - 10906

25. Konrad Sakowski, Leszek Marcinkowski, Pawel Strak, Pawel Kempisty, and Stanislaw Krukowski
    On the Composite Discontinuous Galerkin Method for Simulations of Electric Properties of Semiconductor Devices
    Electronic Transactions on Numerical Analysis - 18 March 2019; 51: 75-98

26. Pawel Kempisty, Pawel Strak, Konrad Sakowski, and Stanislaw Krukowsk
    Chemical inactivity of GaN(0001) surface – the role of oxygen adsorption – ab intio picture
    Materials Science in Semiconductor Processing - 1 March 2019; 91: 252 - 259
    2018

27. Pawel Strak, Stanislaw Krukowski
    Erratum to “Molecular nitrogen - N₂ properties: the intermolecular potential and the equation of state” [J. Chem. Phys 126, 194501 (2007).]
    Journal of Chemical Physics - 29 October 2018: 149: 189902

28. Pawel Strak, Konrad Sakowski, Pawel Kempisty, Izabella Grzegory, Stanislaw Krukowski
    Adsorption of N₂ and H₂ at AlN(0001) Surface: Ab Initio Assessment of the Initial Stage of Ammonia Catalytic Synthesis
    Journal of Physical Chemistry C - 10 August 2018; 122: 20301 - 20311

29. Kamil Koronski, Pawel Strak, Aleksandra Wierzbicka, Ewa Grzanka, Jolanta Borysiuk, Kamil Sobczak, Rafal Jakiela, Marta Sobanska, Kamil Klosek, Eva Monroy, Zbigniew R. Zytkiewicz, Stanislaw Krukowski, and Agata Kaminska
    Experimental and theoretical analysis of influence of barrier composition on optical properties GaN/AlGaN multi-quantum wells: temperature- and pressure-dependent photoluminescence studies
    Journal of Alloys and Compounds - 7 August 2018; 769: 1064 - 1071
    2017

30. Pawel Strak, Konrad Sakowski, Pawel Kempisty and Stanislaw Krukowski
    A Case Report on: Dissipation of the excess energy of the adsorbate- thermalization via electron transfer
    Journal of Physics and Astronomy - 10 December 2017; 5: 4

31. Pawel Kempisty, Pawel Strak, Konrad Sakowski, Yoshihiro Kangawa, and Stanislaw Krukowski
    Thermodynamic foundations of applications of ab initio methods for determination of the adsorbate equilibria: hydrogen at GaN(0001) surface
    Physical Chemistry Chemical Physics - 18 October 2017; 19: 29676-29684

32. Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, and Hiroshi Amano
    DFT modeling of carbon incorporation in GaN(0001) and GaN(0001) metalorganic vapor phase epitaxy
    Applied Physics Letters - 2 October 2017; 111: 141602

33. Jakub Soltys, Jacek Piechota and Stanislaw Krukowski
    Intrasurface Electron Transition Contribution to Energy of Adsorption of Silicon at the SiC(0001) Surface - A Density Functional Theory (DFT) Study
    Journal of Crystal Growth - 1 June 2017; 468: 870-873

34. Robert Czernecki, Ewa Grzanka, Pawel Strak, Greg Targowski, Stanislaw Krukowski, Piotr Perlin, Tadeusz Suski, Michal Leszczynski
    Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers
    Journal of Crystal Growth - 15 April 2017; 464: 123-126

35. Pawel Kempisty, Pawel Strak, Konrad Sakowski, Stanislaw Krukowski
    Thermodynamics of GaN(s)-NH3(v)+N2(v)+H2(v) system - electronic aspects of the processes at GaN(0001) surface
    Surface Science, 31 March 2107; 662: 12 - 33

36. Pawel Strak, Konrad Sakowski, Pawel Kempisty and Stanislaw Krukowski
    Dissipation of the excess energy of the adsorbate- thermalization via electron transfer
    Physical Chemistry Chemical Physics - 10 March 2107; 19: 9149 - 9155

37. Pawel Strak, Pawel Kempisty, Konrad Sakowski and Stanislaw Krukowski
    Ab initio determination of electron affinity of polar nitride surfaces, clean and under Cs coverage
    Journal of Vacuum Science and Technology A - 3 February 2017; 35: 021406

38. Mikhail G. Brik, Sebastian Mahlik, Dawid Jankowski, Pawel Strak, Krzysztof P. Korona, Eva Monroy, Stanislaw Krukowski, and Agata Kaminska
    Experimental and first-principles studies of high-pressure effects on the structural, electronic and optical properties of semiconductors and lanthanide doped solids
    Japanese Journal of Applied Physics - 9 March 2017; 56: 05FA02

39. Jakub Soltys, Jacek Piechota, Pawel Strak and Stanislaw Krukowski
    Electronic Charge Transfer Contribution in Adsorption of Silicon at the SiC(0001) Surface - A Density Functional Theory (DFT) Study
    Applied Surface Science - 30 January 2017; 393: 168 - 179

40. Pawel Strak, Pawel Kempisty, Konrad Sakowski, Agata Kaminska, Dawid Jankowski, Krzysztof P. Korona, Kamil Sobczak, Jolanta Borysiuk, Mark Beeler, Ewa Grzanka, Eva Monroy and Stanislaw Krukowski
    Ab initio and experimental studies of polarization and polarization related fields in nitrides and nitride structures
    AIP Advances - 17 January 2017; 7: 015027
    2016

41. Agata Kaminska, Dawid Jankowski, Pawel Strak, Krzysztof P. Korona, Mark Beeler, Konrad Sakowski, Ewa Grzanka, Jolanta Borysiuk, Kamil Sobczak, Eva Monroy and Stanislaw Krukowski
    High pressure and time resolved studies of optical properties of n-type doped GaN/AlN multi-quantum wells: Experimental and theoretical analysis
    Journal of Applied Physics - 7 September 2016; 120: 095705-1-9

42. Jolanta Borysiuk, Konrad Sakowski, Piotr Drozdz, Krzysztof P. Korona, Kamil Sobczak, Grzegorz Muziol, Czeslaw Skierbiszewski, Agata Kaminska, and Stanislaw Krukowski
    Electric field dynamics in nitride structures containing quaternary alloy (Al, In, Ga)N
    Journal of Applied Physics - 6 July 2016; 120: 015702-1-10

43. Konrad Sakowski, Pawel Strak, Stanislaw Krukowski, and Dariusz Marcinkowski
    Optimization of InGaN laser diodes based on numerical simulations
    Acta Physica Polonica A - 31 January 2016; 129: 33-35

44. Pawel Strak, Konrad Sakowski, Agata Kaminska, and Stanislaw Krukowski
    Influence of pressure on the properties of GaN/AlN multi-quantum wells - ab initio study
    Journal of Physics and Chemistry of Solids - 19 February 2016; 93:100-117

45. AgataKaminska, Pawel Strak, Jolanta Borysiuk, Kamil Sobczak, Jaroslaw Z. Domagala, Mark Beeler, Ewa Grzanka, Konrad Sakowski, Stanislaw Krukowski, and Eva Monroy
    Correlation of optical and structural properties of GaN/AlN multi-quantum wells—Ab initio and experimental study
    Journal of Applied Physics - 7 January 2016; 119:015703

46. Konrad Sakowski, Leszek Marcinkowski, Pawel Strak, Pawel Kempisty, Stanislaw Krukowski
    Discretization of the drift-diffusion equations with the composite discontinuous Galerkin method
    Lecture Notes in Computer Science - 1 January 2016; 9574: 391-400
    2015

47. Pawel Strak, Konrad Sakowski, Pawel Kempisty, Stanislaw Krukowski
    Structural and electronic properties of AlN(0001) surface under partial N coverage as determined by ab intio approach
    Journal of Applied Physics - 3 September 2015; 118:095705

48. Przemyslaw Witczak, Pawel Kempisty, Pawel Strak and Stanislaw Krukowski
    Ab intio study of Ga-GaN system: transition from adsorbed metal atoms to a metal-semiconductor junction
    Journal of Vacuum Science and Technology A - 29 July 2015; 33:061101

49. Maria Ptasinska, Jacek Piechota, Stanislaw Krukowski
    Adsorption of Hydrogen at GaN(0001) Surface – Ab Initio Study
    Journal of Physical Chemistry C - 7 May 2015; 119: 11563 - 11569

50. Przemyslaw Witczak, Zbigniew Witczak, Ryszard Jemielniak, Marcin Krysko, Stanislaw Krukowski, Michal Bockowski
    Linear piezoelectricity material constants for ammonothermal gallium nitride measured by bulk acoustic waves
    Semiconductor Science and Technology - 13 January 2015; 30: 035008
    2014

51. Pawel Kempisty, Stanislaw Krukowski
    Adsorption of ammonia at GaN(0001) surface in the mixed ammonia/hydrogen ambient - a summary of ab initio data
    AIP Advances - 13 November 2014; 4: 117109

52. Pawel Kempisty, Pawel Strak, Konrad Sakowski, Stanislaw Krukowski
    DFT study of ammonia desorption from the GaN(0001) surface covered with a NH3/NH2 mixture
    Journal of Crystal Growth - 1 October 2014; 403: 105-109

53. Jakub Soltys, Jacek Piechota, Maria Ptasinska and Stanislaw Krukowski
    Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface
    Journal of Applied Physics - 25 August 2014; 116: 083502

54. Robert Czernecki, Slawomir Kret, Pawel Kempisty, Ewa Grzanka, Jerzy Plesiewicz, Greg Targowski, Szymon Grzanka, Marta Bilska, Julita Smalc-Koziorowska, Stanislaw Krukowski, Tadek Suski, Piotr Perlin, Mike Leszczynski
    Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers
    Journal of Crystal Growth - 19 June 2014; 402: 330-336

55. Pawel Strak, Pawel Kempisty, Konrad Sakowski, Stanislaw Krukowski
    Doping effects in InN/GaN short-period quantum well structures - theoretical studies based on density functional methods
    Journal of Crystal Growth - August 2014; 401:652-656

56. Stanislaw Krukowski, Jakub Soltys, Jolanta Borysiuk and Jacek Piechota
    Influence of a parallel electric field on the dispersion relation of graphene - a new route to Dirac logics
    Journal of Crystal Growth - August 2014; 401:869-873

57. Pawel Kempisty, Pawel Strak, Konrad Sakowski, Stanislaw Krukowski
    Adsorption of ammonia on hydrogen covered GaN(0001) surface - Density Functional Theory study
    Journal of Crystal Growth - August 2014; 401:514-517

58. Pawel Kempisty, Pawel Strak, Konrad Sakowski, Stanislaw Krukowski
    Adsorption of gallium on GaN(0001) surface in ammonia-rich conditions: a new effect associated with the Fermi level position
    Journal of Crystal Growth - August 2014; 401:78-81

59. Jakub Soltys, Maria Ptasinska, Jacek Piechota, and Stanislaw Krukowski
    Density functional study of GaN(0001)/AlN(0001) high electron mobility transistor structures
    Journal of Crystal Growth - August 2014; 401:30-32

60. Stanislaw Krukowski, Pawel Kempisty, Pawel Strak and Konrad Sakowski
    Fermi level pinning and the charge transfer contribution to the energy of adsorption at semiconducting surfaces
    Journal of Applied Physics - 31 January 2014; 115: 043529

61. Jolanta Borysiuk, Jakub Soltys, Jacek Piechota, Stanislaw Krukowski, Jacek M. Baranowski, and Roman Stepniewski
    Structural defects in epitaxial graphene layers synthesized on C-terminated 4H-SiC (000_1) surface - transmission electron microscopy and density functional theory studies
    Journal of Applied Physics - 6 February 2014; 115: 054310

62. Pawel Kempisty, Pawel Strak, Konrad Sakowski, Stanislaw Krukowski
    General aspects of the vapor growth of semiconductor crystals - a study based on DFT simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient
    Journal of Crystal Growth - 15 March 2014; 390: 71
    2013

63. Stanislaw Krukowski, Pawel Kempisty, Pawel Strak
    Foundations of ab initio simulations of electric charges and fields at semiconductor surfaces within slab models
    Journal of Applied Physics - 11 October 2013; 114: 143705

64. Stanislaw Krukowski, Pawel Kempisty, Pawel Strak
    Fermi level influence on the adsorption at semiconductor surfaces - ab initio simulations
    Journal of Applied Physics - 9 August 2013; 114:063507

65. Maria Ptasinska, Jakub Soltys, Jacek Piechota, Stanislaw Krukowski
    Electronic properties on GaN(000_1) surface - ab initio investigation
    Vacuum - 24 May 2013; 99: 166-74

66. Pawel Strak, Pawel Kempisty, Maria Ptasinska, and Stanislaw Krukowski
    Principal physical properties of GaN/AlN multiquantum well (MQWs) systems determined by density functional theory (DFT) calculations
    Journal of Applied Physics - 17 May 2013; 113: 193706

67. Jakub Soltys, Jacek Piechota, Michal Łopuszynski, and Stanislaw Krukowski
    Density functional theory (DFT) study of Zn, O2 and O adsorption on polar ZnO(0001) and ZnO (000_1) surfaces
    Journal of Crystal Growth - 6 April 2013; 374: 53-59

68. Magdalena A. Zaluska-Kotur, Filip Krzyzewski, Stanislaw Krukowski, Robert Czernecki, and Michal Leszczynski
    Structures built by steps motion during sublimation from annealed GaN(0001) surface
    Crystal Growth and Design - 6 February 2013; 13: 1006-1013

69. Pawel Strak, Pawel Kempisty, Maria Ptasinska and Stanislaw Krukowski
    DFT modeling of AlN/GaN multi quantum wells
    Physica Status Solidi C - 23 January 2013; 10: 323-326
    2012

70. Pawel Kempisty and Stanislaw Krukowski
    On the nature of Surface States Stark Effect at clean GaN(0001) surface
    Journal of Applied Physics - 5 December 2012; 112: 113704

71. Pawel Kempisty, Pawel Strak, Stanislaw Krukowski and Konrad Sakowski
    Erratum: "Ab initio studies of electronic properties of bare GaN(0001) surface " [J. Appl. Phys. 106 (2009) 054901]
    Journal of Applied Physics - 31 May 2012; 111: 109905

72. Pawel Kempisty and Stanislaw Krukowski
    Ab initio investigation of adsorption of atomic and molecular hydrogen at GaN(0001) surface
    Journal of Crystal Growth - 13 August 2012; 358: 64-74

73. Pawel Strak, Zbigniew R. Zytkiewicz and Stanislaw Krukowski
    Control of growth uniformity of III-V bulk crystals grown by contactless liquid phase electroepitaxy
    Journal of Crystal Growth - 26 June 2012; 355: 1-7

74. Konrad Sakowski, Leszek Marcinkowski, Stanislaw Krukowski, Szymon Grzanka and Elzbieta Litwin-Staszewska
    Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes
    Journal of Applied Physics - 27 June 2012; 111: 123115

75. Jakub Soltys, Jolanta Borysiuk, Jacek Piechota and Stanislaw Krukowski
    Experimental and theoretical investigation of graphene layers on SiC(000_1) in different stacking arrangements
    Journal of Vacuum Science and Technology B - 15 May 2012; 30: 03D117

76. Pawel Kempisty, Pawel Strak, and Stanislaw Krukowski
    Ab initio study of the properties of GaN(0001) surface at MOVPE and HVPE growth conditions
    Physica Status Solidi C - 1 March 2012; 9: 826-829

77. Magdalena A. Zaluska-Kotur, Filip Krzyzewski, and Stanislaw Krukowski
    Emergence of regular, meandered step structure of GaN(0001) surface during simulated crystal growth process
    Journal of Crystal Growth - 28 January 2012; 343: 138-144

78. Jolanta Borysiuk, Jakub Soltys, Rafal Bozek, Jacek Piechota, Stanislaw Krukowski, Wlodzimierz Strupinski, Jacek M. Baranowski, and Roman Stepniewski
    Role of structure of C-terminated 4H-SiC(0001) surface in growth of graphene layers - transmission electron microscopy and density functional theory studies
    Physical Review B - 18 January 2012; 85: 045426

79. Pawel Kempisty, Pawel Strak, and Stanislaw Krukowski
    Erratum to "Ab initio determination of atomic structure and energy of surface states of bare and hydrogen covered GaN (0001) surface - existence of the Surface States Stark Effect (SSSE)" [Surf. Sci. 605 (2011) 695-713]
    Surface Science - 05 January 2012; 606: 571-572
    2011

80. Zbigniew R. Zytkiewicz, Pawel Strak, and Stanislaw Krukowski
    Unlimited growth of III-V bulk crystals by liquid phase electroepitaxy
    Crystal Growth and Design - 18 August 2011; 11: 4684-4689

81. Magdalena A. Zaluska-Kotur, Filip Krzyzewski, Stanislaw Krukowski
    Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions.
    Journal of Applied Physics - 20 January 2011; 109: 023515

82. Pawel Strak, Stanislaw Krukowski
    Determination of Shear Viscosity of Molecular Nitrogen (N2): Molecular Dynamic Hard Rotor Methodology and the Results
    Journal of Physical Chemistry B - 25 March 2011; 115: 4359-4368

83. Michal Leszczynski, Robert Czernecki, Stanislaw Krukowski, Marcin Krysko, Grzegorz Targowski, Pawel Prystawko, Jerzy Plesiewicz, Piotr Perlina, and Tadeusz Suski
    Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy
    Journal of Crystal Growth - 1 March 2011; 318: 496-499

84. Zbigniew R. Zytkiewicz, Pawel Strak, and Stanislaw Krukowski
    Time dependent simulations of the growth of III-V crystals by the liquid phase electroepitaxy
    Journal of Crystal Growth 1 March 2011; 318: 351-355

85. Pawel Kempisty, Pawel Strak and Stanislaw Krukowski
    Ab initio determination of atomic structure and energy of surface states of bare and hydrogen covered GaN (0001) surface - existence of the Surface States Stark Effect (SSSE)
    Surface Science 12 January 2011; 605: 695-713
    2010

86. Izabella Grzegory, Michal Bockowski, Pawel Strak, Stanislaw Krukowski, Sylwester Porowski
    The influence of indium on the growth of GaN from solution under high pressure
    Journal of Crystal Growth 2010; 312(18): 2593-2598

87. Pawel Strak, Zbigniew R. Zytkiewicz, Konrad Sakowski, and Stanislaw Krukowski
    Numerical analysis of growth kinetics of bulk III-V crystals by liquid phase electroepitaxy
    Crystal Research and Technology 17 September 2010;45:1290-1294

88. Zbigniew Romanowski, Pawel Kempisty, Konrad Sakowski, Pawel Strak, and Stanislaw Krukowski
    Density Functional Theory (DFT) simulations and polarization analysis of the electric field in InN/GaN multiple quantum wells (MQWs)
    Journal of Physical Chemistry C. 9 August 2010; 114:14410-14416

89. Magdalena A. Zaluska-Kotur, Filip Krzyzewski and Stanislaw Krukowski
    Surface patterns due to step flow anisotropy formed in the crystal growth process
    Journal of Noncrystalline Solids 9 June 2010; 356:1935-1939

90. Zbigniew Romanowski, Pawel Kempisty, Jolanta Prywer, Stanislaw Krukowski and Agnieszka Torzewska
    Density Functional Theory Determination of Structural and Electronic Properties of Struvite
    Journal of Physical Chemistry A. 29 June 2010; 114:7800-7808

91. Julita Smalc-Koziorowska, Szymon Grzanka, Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, Grzegorz Nowak, Michal Leszczynski, Piotr Perlin, Ewa Talik, Jan Kozubowski, Stanislaw Krukowski
    Ni-Au contacts to p-type GaN - structure and properties
    Solid State Electronics. 1 July 2010; 54: 701-9

92. Jakub Soltys, Jacek Piechota, Michal Lopuszynski and Stanislaw Krukowski
    A comparative DFT study of electronic properties of 2H-, 4H- and 6H-SiC(0001) and SiC(0001) clean surfaces: significance of the surface Stark effect
    New Journal of Physics. 13 April 2010; 12: 043024
    2009

93. Zbigniew Romanowski, Stanislaw Krukowski
    Derivation of von Weizsacker equation based on Green-Gauss theorem
    Acta-Physica-Polonica-A. March 2009; 115(3):653-655

94. Stanislaw Krukowski, Pawel Kempisty and Pawel Strak
    Review: GaN growth by ammonia based methods - density functional theory study
    Crystal Research and Technology. 1 October 2009; 44: 1038-1048

95. Pawel Kempisty, Stanislaw Krukowski, Pawel Strak and Konrad Sakowski
    Ab initio studies of electronic properties of bare GaN(0001) surface
    Journal of Applied Physics. 2 September 2009; 106: 054901

96. Stanislaw Krukowski, Pawel Kempisty and Pawel Strak
    Electrostatic condition for the termination of the opposite face of the slab in DFT simulations of semiconductor surfaces
    Journal of Applied Physics. 1 June 2009; 105: 113701
    2008

97. Pawel Strak and Stanislaw Krukowski
    Molecular dynamic simulations of viscosity of Argon at high pressures
    High-Pressure-Research. 1 December 2008; 28:469–476

98. Stanislaw Krukowski, Pawel Kempisty and Abraham F. Jalbout
    Thermodynamic and kinetic approach in DFT studies of microscopic structure of GaN(0001) surface in ammonia-rich conditions
    Journal of Chemical Physics. 17 December 2008; 129: 234705

99. P. Perlin, T. Swietlik, L. Marona, R. Czernecki, T. Suski, M. Leszczynski, I. Grzegory, S. Krukowski, G. Nowak, G. Kamler, A. Czerwinski, M. Plusa, M. Bednarek, J. Rybinski, S. Porowski
    Fabrication and properties of GaN-based lasers
    Journal-of-Crystal-Growth. 7 June 2008; 310: 3979-3982

100. M. Siekacz, A. Feduniewicz- Zmuda, G. Cywiński, M. Krysko, J. Smalc, I. Grzegory, S. Krukowski, K. E. Waldrip, W. Jantsch, Z. R. Wasilewski, S. Porowski and C. Skierbiszewski
     Growth of InGaN and InGaN/InGaN Quantum Wells by Plasma Assisted Molecular Beam Epitaxy
     Journal-of-Crystal-Growth. 7 June 2008; 310: 3983-3986

101. Romanowski Zbigniew, Krukowski Stanislaw and Abraham F. Jalbout
     Transformation of real spherical harmonics under rotations
     Acta-Physica-Polonica-B. 1 August 2008; 39(8): 1985-1991

102. Pawel Strak and Stanislaw Krukowski
     The role of the intermolecular potential in determination of equilibrium and dynamic properties of molecular nitrogen (N₂): MD simulations
     Journal-of-Physics:-Conference-Series. 2008; 121: 012011

103. Stanislaw Krukowski, Pawel Strak, Pawel Kempisty
     Role of chlorine in the dynamics of GaN(0001) surface during HVPE GaN growth: Ab initio study
     Journal-of-Crystal-Growth. 2008; 310: 1391-1397

104. Romanowski Zbigniew and Krukowski Stanislaw
     Numerical evoluation of overlap integrals between atomic orbitals
     Journal-of-Molecular-Structure:-THEOCHEM. 15 January 2008; 848: 34-39

105. Pawel Kempisty and Stanislaw Krukowski
     Crystal growth of GaN on (0001) face by HVPE: Ab initio simulations
     Journal-of-Crystal-Growth. 2008; 310: 900-905
     2007

106. Zbigniew Romanowski and Stanislaw Krukowski
     Transformation of complex spherical harmonics under rotations
     Journal-of-Physics-A:-Mathematical-and-Theoretical. 2007; 40, 15071-15082

107. Czernecki Robert, Krukowski Stanislaw, Targowski Grzegorz, Prystawko Pawel, Sarzynski Marcin, Krysko Marcin, Kamler Grzegorz, Grzegory Izabella, Leszczynski Michal and Porowski Sylwester
     Strain-compensated AlGaN/GaN/ InGaN cladding layers in homoepitaxial nitride devices
     Applied Physics Letters. 6 December 2007: 91, 231914

108. M. Krysko, G. Franssen, T. Suski, M. Albrecht, B. Lucznik, I. Grzegory, S. Krukowski, R. Czernecki, S. Grzanka, I. Makarowa, M. Leszczyński, and P. Perlin
     Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates
     Applied Physics Letters. 21 November 2007: 91, 211904

109. S. Krukowski, P. Kempisty, P. Strak, G. Nowak, R. Czernecki, M. Leszczynski, T. Suski, M. Bockowski, and I. Grzegory
     Modelling the growth of nitrides in ammonia-rich environment
     Crystal-Research-and-Technology. 2007; 42: 1281

110. Bockowski Michal, Strak Pawel, Kempisty Pawel, Grzegory Izabella, Krukowski Stanislaw, Lucznik Boleslaw and Porowski Sylwester
     High pressure - high temperature seeded growth of GaN on 1 in sapphire/GaN templates: Analysis of convective transport
     Journal-of-Crystal-Growth. 2007; 307: 259-267

111. Bockowski Michal, Grzegory Izabella, Kamler Grzegorz, Lucznik Boleslaw, Krukowski Stanislaw, Wroblewski Miroslaw, Kwiatkowski Pawlel, Jasik Krzysztof, Porowski Sylwester
     Platelets and needles: two habits of pressure-grown GaN crystals
     Journal-of-Crystal-Growth. 2007; 305: 414-420

112. Krukowski Stanislaw, Grzegory Izabella, Bockowski Michal, Łucznik Boleslaw, Wróblewski Miroslaw, Porowski Sylwester
     Adsorption and dissolution of nitrogen in lithium - QM DFT investigation
     Journal-of-Crystal-Growth. 15 June 2007; 304: 299-309

113. Pawel Kempisty and Stanislaw Krukowski
     Crystal growth of GaN on (0001) face by HVPE - atomistic scale simulation
     Journal-of-Crystal-Growth. 1 May 2007; 303: 37-43

114. Jolanta Prywer and Stanislaw Krukowski
     Growth of 2D nuclei - a Monte Carlo study of existence of various habits
     Journal-of-Crystal-Growth. 1 May 2007; 303: 23-29

115. Zaluska-Kotur MA; Krukowski S; Lusakowski A; Turski LA
     Domain growth in the interacting adsorbate: Nonsymmetric particle jump model
     Physical-Review-B-Condensed-Matter-and-Materials-Physics. 15 March 2007; 75: 115412

116. Strak P; Krukowski S
     Molecular nitrogen-N₂ properties: The intermolecular potential and the equation of state
     Journal of Chemical Physics. 16 May 2007; 126: 194501-194511
     2006

117. M. Bockowski, G. Nowak, G. Kamler, B. Lucznik, M. Wróblewski, P. Kwiatkowski, K. Jasik, S. Krukowski, S. Porowski, and I. Grzegory
     Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method
     Proceeding SPIE. 3 March 2006 6121; 612103

118. Krukowski-S; Skierbiszewski-C; Perlin-P; Leszczynski-M; Bockowski-M; Porowski-S
     Blue and UV semiconductor lasers
     Acta-Physica-Polonica-B. 1 April 2006; 37: 1265-1312

119. Bockowski-M; Grzegory-I; Nowak-G; Lucznik-B; Pastuszka-B; Kamler-G; Wroblewski-M; Kwiatkowski-P; Jasik-K; Wawer-W; Krukowski-S; Porowski-S
     Growth of GaN on patterned thick HVPE free standing GaN substrates by high pressure solution method
     Physica-Status-Solidi-C. 2006; (6): 1487-1490

120. Lucznik-B; Pastuszka-B; Grzegory-I; Bockowski-M; Kamler-G; Domagala-J; Nowak-G; Prystawko-P; Krukowski-S; Porowski-S
     Crystallization of free standing bulk GaN by HVPE
     Physica-Status-Solidi-C. 2006; (6): 1453-1456

121. Krukowski S; Kempisty P; Lucznik B; Pastuszka B; Grzegory I; Bockowski M; Porowski S
     CFD and reaction computational analysis of the growth of GaN by HVPE method
     Journal-of-Crystal-Growth. 15 Oct. 2006; 296: 31-42

122. Grzegory-I; Lucznik-B; Bockowski-M; Pastuszka-B; Kamler-G; Nowak-G; Krysko-M; Krukowski-S; Porowski-S
     Crystallization of GaN by HVPE on pressure grown seeds
     Physica-Status-Solidi-A. May 2006; 203: 1654-1657

123. Kempisty-P; Grzegory-I; Bockowski-M; Krukowski-S; Lucznik-B; Pastuszka-B; Porowski-S
     Mass flow and reaction analysis of the growth of GaN by HVPE
     Physica-Status-Solidi-A. Jan. 2006; 203(1): 131-134

124. Lepkowski-SP; Krukowski-S
     Theoretical study of current overflow in GaN based light emitters with superlattice cladding layers
     Journal-of-Applied-Physics. 1 July 2006; 100: 16103

125. Krukowski-S; Strak-P
     Equation of state of nitrogen (N₂ at high pressures and high temperatures: molecular dynamics simulation
     Journal-of-Chemical-Physics. 7 April 2006; 124: 134501

126. Swietlik-T; Franssen-G; Wisniewski-P; Krukowski-S; Lepkowski-SP; Marona-L; Leszczynski-M; Prystawko-P; Grzegory-I; Suski-T; Porowski-S; Perlin-P; Czernecki-R; Bering-Staniszewska-A; Eliseev-PG
     Anomalous temperature characteristics of single wide quantum well InGaN laser diode
     Applied-Physics-Letters. 13 Feb. 2006; 88: 71121
     2005

127. Krukowski-S; Grzegory-L; Bockowski-M; Lucznik-B; Suski-T; Nowak-G; Borysiuk-J; Wroblewski-M; Leszczynski-M; Perlin-P; Porowski-S; Weyher-JL
     Growth of AlN, GaN and InN from the solution
     International-Journal-of-Materials-and-Product-Technology. 2005; 22: 226-261

128. Bockowski-M; Grzegory-I; Borysiuk-J; Kamler-G; Lucznik-B; Wroblewski-M; Kwiatkowski-P; Jasik-K; Krukowski-S; Porowski-S
     Growth of GaN on patterned GaN/sapphire substrates by high pressure solution method
     Journal-of-Crystal-Growth. 15 July 2005; 281: 11-16

129. Prywer-J; Krukowski-S
     A Monte Carlo study of the dependence of the habits of Kossel crystal on dynamic parameters during two-dimensional growth
     Crystal-Research-and-Technology. April 2005; 40: 340-346

130. Bockowski-M; Grzegory-I; Krukowski-S; Lucznik-B; Wroblewski-M; Kamler-G; Borysiuk-J; Kwiatkowski-P; Jasik-K; Porowski-S
     Gallium nitride growth on sapphire/GaN templates at high pressure and high temperatures
     Journal-of-Crystal-Growth. 15 Jan. 2005; 274: 55-64
     2004

131. Bockowski M, Grzegory I, Lucznik B, Krukowski S, Wroblewski M, Kwiatowski P, Jasik K, Wawer W, Borysiuk J, Kamler G, Porowski S
     Growth of bulk GaN on GaN/sapphire templates by a high N₂ pressure method
     Physica-Status-Solidi-B. Oct. 2004; 241: 2685-2688

132. Bockowski-M; Grzegory-I; Krukowski-S; Lucznik-B; Wroblewski-M; Kamler-G; Borysiuk-J; Kwiatkowski-P; Jasik-K; Porowski-S
     Deposition of bulk GaN from solution in gallium under high N₂ pressure on silicon carbide and sapphire substrates
     Journal-of-Crystal-Growth. 1 Oct. 2004; 270: 409-419

133. M. A. Zaluska-Kotur, A. Lusakowski, S. Krukowski and L. A. Turski
     Collective diffusion of O/W(1 1 0) at high coverages: Monte Carlo simulations
     Surface Science, vol. 566-568, Part 1, 20 September 2004, Pages 210-215

134. Porowski S, Grzegory I, Krukowski S, Leszczynski M, Perlin R, Suski T
     Blue lasers on high pressure grown GaN single crystal substrates
     Europhysics News, vol.35, no.3, May-June 2004, pp.69-73
     2003

135. Jezowski A, Stachowiak P, Plackowski T, Suski T, Krukowski S, Bockowski M, Grzegory I, Danilchenko B, Paszkiewicz T
     Thermal conductivity of GaN crystals grown by high pressure
     Physica Status Solidi B-Basic Research, vol. 240, 2003, pp.447-450

136. Jezowski A, Stachowiak P, Suski T, Krukowski S, Bockowski M, Grzegory I, Danilchenko B
     Thermal conductivity of bulk GaN single crystals
     Physica B, vol.329-333, 2003, pp.1531-1532

137. Jezowski A, Danilchenko BA, Bockowski M, Grzegory I, Krukowski S, Suski T, Paszkiewicz T
     Thermal conductivity of GaN crystals in 4.2-300 K range
     Solid State Communications, vol.128, no.2-3, 2003, pp.69-73

138. Paszkowicz W, Cerny R, Krukowski S
     Rietveld refinement for indium nitride in the 105-295 K range
     Powder Diffraction, vol.18, no.2, June 2003, pp.114-121

139. Zaluska-Kotur MA, Krukowski S, Turski LA
     Collective diffusion in a twin-spin model of O/W(110)
     Physical Review B-Condensed Matter, vol.67, no.15, 15 April 2003, pp.155406
     2002

140. Bockowski M, Grzegory I, Krukowski S, Lucznik B., Wroblewski M, Romanowski Z, Borysiuk J, Weyher J, Hageman P, Porowski S
     Directional crystallization of GaN on high-pressure direct solution grown substrates by growth from solution and HVPE
     Journal of Crystal Growth, vol. 246, 2002, pp.194-206

141. Grzegory I, Bockowski M, Lucznik B, Krukowski S, Romanowski Z, Wroblewski M, Porowski
     Mechanisms of crystallization of bulk GaN from the solution under high N₂ pressure
     Journal of Crystal Growth, vol. 246, 2002, pp.177-86

142. Bockowski M, Lucznik B, Grzegory I, Wroblewski M, Krukowski S, Porowski S
     High-pressure direct synthesis of aluminium nitride
     Journal-of-Physics:-Condensed-Matter. 11 November 2002; 14:11237-11242

143. Porowski S, Grzegory I, Kolesnikov D, Lojkowski W, Jager V, Jager W, Bogdanov V, Suski T, Krukowski S
     Annealing of GaN under high pressure of nitrogen
     Journal-of-Physics:-Condensed-Matter. 11 November 2002; 14: 11097-11110

144. Zaluska-Kotur MA, Lusakowski A, Krukowski S, Romanowski Z, Turski LA
     Diffusion and desorption processes in ordered (2x2) lattice gas phase
     Surface Science, vol. 507-510, 2002, pp. 150-154

145. Krukowski S
     Microscopic theory of some thermodynamic properties of the solid-vapor transition
     Journal of Chemical Physics, vol.117, no.12, 22 Sept. 2002, pp.5866-75

146. Zaluska-Kotur MA, Krukowski S, Romanowski Z, Turski LA
     Twin spin model of surface phase transition in O/W(110)
     Physical Review B, vol.65, no.4, 15 Jan. 2002, 045404
     2001

147. Grzegory I, Bockowski M, Krukowski S, Lucznik B, Wroblewski M, Weyher JL, Leszczynski M, Prystawki P, Czernecki R, Lehnert J, Nowak G, Perlin P, Teisseyre H, Purgal W, Krupczynski W, Suski T, Dmowski L, Litwin-Staszewska E, Skierbiszewski C, Lepkowski S, Porowski S
     Blue Laser on High N₂ Pressure-Grown Bulk GaN
     Acta Physica Polonica A Supplement vol 100 Dec. 2001 pp.229-232

148. Grzegory I, Krukowski S, Leszczynski M, Perlin P, Suski T, Porowski S
     The application of high pressure in physics and technology of III-V nitrides
     Acta Physica Polonica A Supplement vol 100 Dec. 2001 pp.57-109

149. Romanowski Z, Krukowski S, Grzegory I, Porowski S
     Surface reaction of nitrogen with liquid group III metals
     Journal of Chemical Physics, vol.114, no.14, 8 April 2001, pp.6353-6363

150. Zaluska-Kotur MA, Krukowski S, Romanowski Z, Turski LA
     Collective diffusion of O atoms on the W(110) Surface
     Defect and Diffusion Forum, vol. 194-199 2001, pp.309-314

151. Zaluska-Kotur MA, Krukowski S, Turski LA
     Driven diffusion in a model of the O/W(110) system
     Collective Diffusion at Surfaces: Correlation Effects and Adatom Interactions M.C.Tringides and Z. Chvoj (eds.) Kluwer 2001 pp.59-69

152. Zaluska-Kotur MA, Lusakowski A, Krukowski S, Romanowski Z, Turski LA
     Chemical surface diffusion analysis by the time evolution of density profiles. The Monte Carlo simulations
     Vacuum, vol.63, no.1-2, 2 July 2001, pp.127-133

153. Frayssinet E, Knap W, Krukowski S, Perlin P, Wisniewski P, Suski T, Grzegory I, Porowski S
     Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals
     Journal of Crystal Growth, vol.230, no.3-4, Sept. 2001, pp. 442-7

154. Krukowski S, Bockowski M, Lucznik B, Grzegory I, Porowski S, Suski T, Romanowski Z
     High-nitrogen-pressure growth of GaN single crystals: doping and physical properties
     Journal of Physics-Condensed Matter, vol.13, no.40, 8 Oct. 2001, pp.8881-9
     2000

155. Palczewska M, Wolos A, Kaminska M, Grzegory I, Bockowski M, Krukowski S, Suski T, Porowski S
     Electron spin resonance of erbium in gallium nitride
     Solid State Communications, vol.114, no.1, 2000, pp.39-42

156. Zaluska-Kotur MA, Krukowski S, Romanowski Z, Turski LA
     Spreading of step-like density profiles in interacting lattice gas on a hexagonal lattice
     Surface Science, vol.457, no.3, 10 June 2000, pp.357-64
     1999

157. Krukowski S
     Growth of GaN single crystals under high nitrogen pressures and their characterization
     Crystal Research & Technology, vol.34, no.5-6, 1999, pp.785-95

158. Porowski S, Jun J, Krukowski S, Grzegory I, Leszczynski M, Suski T, Teisseyre H, Foxon CT, Korakakis D
     Annealing of gallium nitride under high-N₂ pressure
     Physica B, vol.265, no.1-4, April 1999, pp.295-9

159. Zaluska-Kotur MA, Krukowski S, Turski LA
     Collective diffusion on hexagonal lattices-repulsive interactions
     Surface Science, vol.441, no.2-3, 1 Nov. 1999, pp.320-8

160. Krukowski S, Tedenac JC.
     Surface diffusion contribution to dendrite sidebranching during growth of 2D Kossel crystal from the vapor
     Journal of Crystal Growth, vol.203, no.1-2, May 1999, pp.269-85

161. Paszkowicz W, Adamczyk J, Krukowski S, Leszczynski M, Porowski S, Sokolowski JA, Michalec M, Lasocha W.
     Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium
     Philosophical Magazine A-Physics of Condensed Matter Defects & Mechanical Properties, vol.79, no.5, May 1999, pp.1145-54
     1998

162. Lucznik B, Bockowski M, Wroblewski M, Grzegory I, Krukowski S, Nowak G, Leszczynski M, Teisseyre G, Pakula K, Baranowski JM, Suski T, Porowski S
     GaN Single Crystals Grown by High Pressure Solution Method
     Revues in High Pressure Science and Technology vol. 7 1998 pp.760-2

163. Porowski S, Grzegory I, Krukowski S
     Thermodynamics and growth of GaN single crystals under pressure
     High-Pressure Materials Research. Symposium. Mater. Res. Soc. 1998, pp.349-60

164. Grzegory I, Bockowski M, Lucznik B, Wroblewski M, Krukowski S, Weyher J, Nowak G, Suski T, Leszczynski M, Teisseyre H, Suski T, Litwin-Staszewska E, Porowski S
     GaN crystals: growth and doping under pressure
     Nitride Semiconductors Symposium. Mater. Res. Soc. 1998, pp.15-26

165. Krukowski S, Bockowski M, Grzegory I, Lucznik B, Nowak G, Wroblewski M, Leszczynski M, Teisseyre G, Suski T, Porowski S
     Recent results in high pressure growth of GaN single crystals
     Proceedings of the Second Symposium on III-V Nitride Materials and Processes. Electrochem. Soc. 1998, pp.189-200

166. Krukowski S, Romanowski Z, Grzegory I, Porowski S
     Interaction of N₂ molecule with liquid Ga surface-quantum mechanical calculations (DFT)
     Journal of Crystal Growth, vol.189-190, June 1998, pp.159-6

167. Witek A, Bockowski M, Presz A, Wroblewski M, Krukowski S, Wlosinski W, Jablonski K
     Synthesis of oxygen-free aluminium nitride ceramics
     Journal of Materials Science, vol.33, no.13, 1 July 1998, pp.3321-4

168. Prywer J, Krukowski S.
     GaN single crystal habits and their relation to GaN growth under high pressure of nitrogen
     MRS Internet Journal of Nitride Semiconductor Research, vol.3, 1998

169. Krukowski S, Witek A, Adamczyk J, Jun J, Bockowski M, Grzegory I, Lucznik B, Nowak G, Wroblewski M, Presz A, Gierlotka S, Stelmach S, Palosz B, Porowski S, Zinn P
     Thermal properties of indium nitride.
     Journal of Physics & Chemistry of Solids, vol.59, no.3, March 1998, pp.289-95
     1997

170. Bockowski M, Witek A, Krukowski S, Wroblewski M, Porowski S, Marin-Ayral RM, Tedenac JC
     Combustion synthesis of aluminum nitride under high pressure of nitrogen and nitrogen-argon mixtures
     Journal of Materials Synthesis & Processing, vol.5, no.6, Nov. 1997, pp.449-58

171. Porowski S, Bockowski M, Lucznik B, Wroblewski M, Krukowski S, Grzegory I, Leszczynski M, Nowak G, Pakula K, Baranowski JM
     GaN crystals grown in the increased volume high pressure reactors
     III-V Nitrides. Symposium. Mater. Res. Soc. 1997, pp.35-40

172. Krukowski S.
     Thermodynamics and high-pressure growth of (Al,Ga,In)N single crystals
     Diamond & Related Materials, vol.6, no.10, Aug. 1997, pp.1515-23
     1996

173. Porowski S, Baranowski JM, Leszczynski M, Jun J, Bockowski M, Grzegory I, Krukowski S, Wroblewski M, Lucznik B, Nowak G, Pakula K, Wysmolek A, Korona KP, Stepniewski R
     Physical properties of GaN single crystalline substrates and homoepitaxial layers
     Blue Laser and Light Emitting Diodes. Ohmsha. 1996, pp.38-41

174. Nowak G, Krukowski S, Grzegory I, Baranowski J, Pakula K.
     Polarity dependent surface morphology of bulk GaN crystals
     23rd International Conference on the Physics of Semiconductors. World Scientific. Part vol.1, 1996, pp.557-60 vol.1

175. Porowski S, Baranowski JM, Leszczyński M, Jun J, Bockowski M, Grzegory I, Krukowski S, Wróblewski M, Łucznik B, Nowak G, Pakuła K, Wysmołek A, Korona KP, Stepniewski R
     Physical Properties of GaN Single Crystalline Substrates and Homoepitaxial Layers
     Proceedings of the International Symposium on Blue Laser and Light Emitting Diodes, eds. A. Yoshikawa, K. Kishino, M. Kobayashi, T. Yasuda, Tokyo, Ohsmsha (1996) p.38

176. Krukowski S, Grzegory I, Bockowski M, Jun J, Łucznik B, Witek A Wróblewski M, Baranowski JM, Porowski S, Adamczyk J
     Nitrogen high pressure influence on GaN crystal growth conditions - a computational analysis
     Proceedings of the Joint XV AIRAPT and XXXIII EHPRG International Conference ed. W. Trzeciakowski, Singapore, World Scientific 1996, pp. 264-6

177. Krukowski S
     Temperature distribution in the chamber used for crystal growth of GaN under high pressure of nitrogen
     MRS Internet Journal of Nitride Semiconductor Research, vol.1, 1996

178. Grzegory I, Bockowski M, Lucznik B, Krukowski S, Wroblewski M, Porowski S
     Recent results in the crystal growth of GaN at high N₂ pressure
     MRS Internet Journal of Nitride Semiconductor Research, vol.1, 1996

179. Teisseyre H, Nowak G, Leszczynski M, Grzegory I, Bockowski M, Krukowski S, Porowski S, Mayer M, Pelzmann A, Kamp M, Ebeling KJ, Karczewski G
     Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
     MRS Internet Journal of Nitride Semiconductor Research, vol.1, 1996

180. Pakula K, Wysmolek A, Korona KP, Baranowski JM, Stepniewski R, Grzegory I, Bockowski M, Jun J, Krukowski S, Wroblewski M, Porowski S
     Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates.
     Solid State Communications, vol.97, no.11, March 1996, pp.919-22

181. Krukowski S, Tedenac JC
     Fractal to compact transition during growth of 2D Kossel crystal in vapor diffusion field
     Journal of Crystal Growth, vol.160, no.1-2, March 1996, pp.167-76
     1995

182. Grzegory I, Jun J, Bockowski M, Krukowski S, Wroblewski M, Lucznik B, Porowski S
     III-V nitrides-thermodynamics and crystal growth at high N₂ pressure.
     Journal of Physics & Chemistry of Solids, vol.56, no.3-4, March-April 1995, pp.639-647
     1994

183. Krukowski S, Rosenberger F
     Evolution of equilibrium forms of a two-dimensional Kossel crystal in a vapor diffusion field: a Monte Carlo simulation
     Physical Review B-Condensed Matter, vol.49, no.18, 1 May 1994, pp.12464-12474

184. Tedenac JC, Jun J, Krukowski S, Bockowski M, Porowski S, Record M C, Ayral-Marin RM, Brun G
     Phase Diagram Determination of II-VI Semiconductors
     Thermochimica Acta vol. 245 10 October 1994 p. 207 - 217

185. Grzegory I, Jun J, Boćkowski M, Krukowski St, Porowski S
     Thermodynamical properties of AlN, GaN and InN
     Proceedings of the 8th Conf. on Semi-insulating III-V Materials, Warsaw June 6-10 1994, ed by M. Godlewski, pp.73-76

186. Porowski S, Jun J, Boćkowski M, Leszczynski M, Krukowski St, Wróblewski M Łucznik B, Grzegory I
     III-V nitrides - conditions for crystal growth at high N₂ pressure
     Proceedings of the 8th Conf. on Semi-insulating III-V Materials, Warsaw June 6-10 1994, ed by M. Godlewski, pp.61-68

187. Bockowski M, Grzegory I, Wroblewski M, Witek A, Jun J, Krukowski S, Porowski S, Ayral-Marin RM, Tedenac JC
     Combustion synthesis of AlN at high pressure of nitrogen and argon mixtures
     American Institute of Physics Conference Proceedings, no.309, pt.2, 1994, pp.1255-1258

188. Grzegory I, Krukowski S, Jun J, Bockowski M, Wroblewski M, Porowski S
     Stability of indium nitride at N₂ pressure up to 20 kbar.
     American Institute of Physics Conference Proceedings, no.309, pt.1, 1994, pp.565-8

189. Porowski S, Jun J, Krukowski S, Bockowski M, Tedenac JC, Record MC
     High pressure differential thermal analysis (DTA) and crystal growth of α-HgS.
     American Institute of Physics Conference Proceedings, no.309, pt.1, 1994, pp.485-8
     1993

190. Krukowski S, Turski LA
     Diffusion in the distortion field of a dislocation line
     Physics Letters A, vol.175, no.5, 19 April 1993, pp.349-52

191. Grzegory I, Jun J, Krukowski St, Bockowski M, Porowski S
     Crystal growth of III-N compounds under high nitrogen pressure
     Physica B, vol.185, no.1-4, April 1993, pp.99-102

192. Grzegory I, Jun J, Krukowski S, Porowski S.
     GaP-GaN pseudobinary system. Crystal growth of GaN from the solution in the liquid GaP.
     Japanese Journal of Applied Physics, Supplement, vol.32, suppl.32-1, 1993, pp.346-8

193. Grzegory I, Jun J, Krukowski S, Perlin P, Porowski S.
     InN thermodynamics and crystal growth at high pressure of N₂
     Japanese Journal of Applied Physics, Supplement, vol.32, suppl.32-1, 1993, pp.343-5

194. Tedenac JC, Record MC, Ayral-Marin RM, Brun G, Jun J, Grzegory I, Krukowski S, Bockowski M
     Phase transformations and p-T diagram of some HgX compounds (X=S, Se, Te)
     Japanese Journal of Applied Physics, Supplement, vol.32, suppl.32-1, 1993, pp.26-30
     1992

195. Łucznik B, Boćkowski M, Krukowski S
     High Pressure High Temperature Thermal Determination of Triple Point in CdSe
     High Pressure Research, vol. 10, 1992, pp.420-4

196. Bockowski M, Krukowski S, Lucznik B
     DTA determination of the high-pressure-high-temperature phase diagram of CdSe
     Semiconductor Science & Technology, vol.7, no.7, July 1992, pp.994-8

197. Pulicani JP, Krukowski S, Alexander JID, Ouazzani J, Rosenberger F
     Convection in an asymmetrically heated cylinder
     International Journal of Heat & Mass Transfer, vol.35, no.9, Sept. 1992, pp.2119-30
     1991

198. Grzegory I, Krukowski S
     Synthesis and crystal growth of A^IIIB^V semiconducting compounds under high pressure of nitrogen
     Physica Scripta, vol.T39, 1991, pp.242-9
     1987

199. Krukowski S
     A note on the stability analysis of a one-dimensional Bloch wall
     Zeitschrift fur Physik B-Condensed Matter, vol.65, no.3, 1987, pp.323-8
     1982

200. Krukowski S, Turski LA
     Stress tensor correlation functions and elastic moduli for an interface-a continuous model approach
     Journal of Physics C: Solid State Physics, vol.17, no.32, 20 Nov. 1984, pp.5879-85
     1981

201. Krukowski St, Turski LA
     Time-dependent solution for a spherically symmetric freezing precipitate
     Journal of Crystal Growth, vol.58, no.3, Aug. 1982, pp.631-5

Chapters in monographs

1. Izabella Grzegory, Stanislaw Krukowski, Michal Leszczynski, Piotr Perlin, Tadeusz Suski, Sylwester Porowski
   High-Pressure Crystallization of GaN
   Nitride Semiconductors
   Published Online: 7 Jun 2006
   Editor(s): Pierre Ruterana, Martin Albrecht, Jörg Neugebauer
   Print ISBN: 9783527403875 Online ISBN: 9783527607648
   DOI: 10.1002/3527607641
   Copyright: 2003 Wiley-VCH Verlag GmbH & Co. KGaA
   

2. Izabella Grzegory, Michal Bockowski, Piotr Perlin, Czeslaw Skierbiszewski, Tadeusz Suski, Marcin Sarzynski, Stanislaw Krukowski and Sylwester Porowski
   The homoepitaxial challenge: GaN crystals grown at high pressure for laser diodes and laser diodes arrays, in II-Nitride Semiconductors and their modern devices
   Editor: Bernard Gil
   Copyright: 2013 Oxford University Press
   

3.