NL3 Theory Group - Publications in scientific journals
2017
- Pawel Strak, Konrad Sakowski, Pawel Kempisty and Stanislaw Krukowski
A Case Report on: Dissipation of the excess energy of the adsorbate- thermalization via electron transfer
Journal of Physics and Astronomy - 10 December 2017; 5: 4
- Pawel Kempisty, Pawel Strak, Konrad Sakowski, Yoshihiro Kangawa, and Stanislaw Krukowski
Thermodynamic foundations of applications of ab initio methods for determination of the adsorbate equilibria: hydrogen at GaN(0001) surface
Physical Chemistry Chemical Physics - 18 October 2017; 19: 29676-84
- Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, and Hiroshi Amano
DFT modeling of carbon incorporation in GaN(0001) and GaN(0001) metalorganic vapor phase epitaxy
Applied Physics Letters - 2 October 2017; 111: 141602
- Jakub Soltys, Jacek Piechota and Stanislaw Krukowski
Intrasurface Electron Transition Contribution to Energy of Adsorption of Silicon at the SiC(0001) Surface - A Density Functional Theory (DFT) Study
Journal of Crystal Growth - 1 June 2017; 468: 870-3
- Robert Czernecki, Ewa Grzanka, Pawel Strak, Greg Targowski, Stanislaw Krukowski, Piotr Perlin, Tadeusz Suski, Michal Leszczynski
Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers
Journal of Crystal Growth - 15 April 2017; 464: 123-6
- Pawel Kempisty, Pawel Strak, Konrad Sakowski, Stanislaw Krukowski
Thermodynamics of GaN(s)-NH3(v)+N2(v)+H2(v) system - electronic aspects of the processes at GaN(0001) surface
Surface Science, 31 March 2107; 662: 12 - 33
- Pawel Strak, Konrad Sakowski, Pawel Kempisty and Stanislaw Krukowski
Dissipation of the excess energy of the adsorbate- thermalization via electron transfer
Physical Chemistry Chemical Physics - 10 March 2107; 19: 9149 - 55
- Pawel Strak, Pawel Kempisty, Konrad Sakowski and Stanislaw Krukowski
Ab initio determination of electron affinity of polar nitride surfaces, clean and under Cs coverage
Journal of Vacuum Science and Technology A - 3 February 2017; 35: 021406-1-17
- Mikhail G. Brik, Sebastian Mahlik, Dawid Jankowski, Pawel Strak, Krzysztof P. Korona, Eva Monroy, Stanislaw Krukowski, and Agata Kaminska
Experimental and first-principles
studies of high-pressure effects on the structural, electronic and optical properties
of semiconductors and lanthanide doped solids
Japanese Journal of Applied Physics - 9 March 2017; 56: 05FA02-1-16
- Jakub Soltys, Jacek Piechota, Pawel Strak and Stanislaw Krukowski
Electronic Charge Transfer Contribution in Adsorption of Silicon at the SiC(0001) Surface - A Density Functional Theory (DFT) Study
Applied Surface Science - 30 January 2017; 393: 168 - 79
- Pawel Strak, Pawel Kempisty, Konrad Sakowski, Agata Kaminska, Dawid Jankowski, Krzysztof P. Korona, Kamil Sobczak, Jolanta Borysiuk, Mark Beeler, Ewa Grzanka, Eva Monroy and Stanislaw Krukowski
Ab initio and experimental studies of polarization and polarization related fields in nitrides and nitride structures
AIP Advances - 17 January 2017; 7: 015027-1-26
2016
- Agata Kaminska, Dawid Jankowski, Pawel Strak, Krzysztof P. Korona, Mark Beeler, Konrad Sakowski, Ewa Grzanka, Jolanta Borysiuk, Kamil Sobczak, Eva Monroy and Stanislaw Krukowski
High pressure and time resolved studies of optical properties of n-type doped GaN/AlN multi-quantum wells: Experimental and theoretical analysis
Journal of Applied Physics - 7 September 2016; 120: 095705-1-9
- Jolanta Borysiuk, Konrad Sakowski, Piotr Drozdz, Krzysztof P. Korona, Kamil Sobczak, Grzegorz Muziol, Czeslaw Skierbiszewski, Agata Kaminska, and Stanislaw Krukowski
Electric field dynamics in nitride structures containing quaternary alloy
(Al, In, Ga)N
Journal of Applied Physics - 6 July 2016; 120: 015702-1-10
- Konrad Sakowski, Pawel Strak, Stanislaw Krukowski, and Dariusz Marcinkowski
Optimization of InGaN laser diodes based on numerical simulations
Acta Physica Polonica A - 31 January 2016; 129: 33-5
- Pawel Strak, Konrad Sakowski, Agata Kaminska, and Stanislaw Krukowski
Influence of pressure on the properties of GaN/AlN multi-quantum wells - ab initio study
Journal of Physics and Chemistry of Solids - 19 February 2016; 93:100-17
- Agata Kaminska, Pawel Strak, Jolanta Borysiuk, Kamil Sobczak, Jaroslaw Z. Domagala, Mark Beeler, Ewa Grzanka, Konrad Sakowski, Stanislaw Krukowski, and Eva Monroy
Correlation of optical and structural properties of GaN/AlN multi-quantum wells?Ab
initio and experimental study
Journal of Applied Physics - 7 January 2016; 119:015703-1-10
2015
- Pawel Strak, Konrad Sakowski, Pawel Kempisty, Stanislaw Krukowski
Structural and electronic properties of AlN(0001) surface under partial N coverage as determined by ab intio approach
Journal of Applied Physics - 3 September 2015; 118:095705-1-14
- Przemyslaw Witczak, Pawel Kempisty, Pawel Strak and Stanislaw Krukowski
Ab intio study of Ga-GaN system: transition from adsorbed metal atoms to a metal-semiconductor junction
Journal of Vacuum Science and Technology A - 29 July 2015; 33:061101-1-13
- Maria Ptasinska, Jacek Piechota, Stanislaw Krukowski
Adsorption of Hydrogen at GaN(0001) Surface ? Ab Initio Study
Journal of Physical Chemistry C - 7 May 2015; 119: 11563 - 9
- Przemyslaw Witczak, Zbigniew Witczak, Ryszard Jemielniak, Marcin Krysko, Stanislaw Krukowski, Michal Bockowski
Linear piezoelectricity material constants for ammonothermal gallium nitride measured by bulk acoustic waves
Semiconductor Science and Technology - 13 January 2015; 30: 035008
2014
- Pawel Kempisty, Stanislaw Krukowski
Adsorption of ammonia at GaN(0001) surface in the mixed ammonia/hydrogen ambient - a summary of ab initio data
AIP Advances - 13 November 2014; 4: 117109-1-24
- Pawel Kempisty, Pawel Strak, Konrad Sakowski, Stanislaw Krukowski
DFT study of ammonia desorption from the GaN(0001) surface covered with a NH3/NH2 mixture
Journal of Crystal Growth - 1 October 2014; 403: 105-9
- Jakub Soltys, Jacek Piechota, Maria Ptasinska and Stanislaw Krukowski
Hydrogen intercalation of single and multiple layer graphene synthesized on Si-terminated SiC(0001) surface
Journal of Applied Physics - 25 August 2014; 116: 083502-1-7
- Robert Czernecki, Slawomir Kret, Pawel Kempisty, Ewa Grzanka,
Jerzy Plesiewicz, Greg Targowski, Szymon Grzanka, Marta Bilska,
Julita Smalc-Koziorowska, Stanislaw Krukowski, Tadek Suski, Piotr
Perlin, Mike Leszczynski
Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers
Journal of Crystal Growth - 19 June 2014; 402: 330-6
- Pawel Strak, Pawel Kempisty, Konrad Sakowski, Stanislaw Krukowski
Doping effects in InN/GaN short-period quantum well structures - theoretical studies based on density functional methods
Journal of Crystal Growth - August 2014; 401:652-6
- Stanislaw Krukowski, Jakub Soltys, Jolanta Borysiuk and Jacek Piechota
Influence of a parallel electric field on the dispersion relation of graphene - a new route to Dirac logics
Journal of Crystal Growth - August 2014; 401:869-73
- Pawel Kempisty, Pawel Strak, Konrad Sakowski, Stanislaw Krukowski
Adsorption of ammonia on hydrogen covered GaN(0001) surface - Density Functional Theory study
Journal of Crystal Growth - August 2014; 401:514-7
- Pawel Kempisty, Pawel Strak, Konrad Sakowski, Stanislaw Krukowski
Adsorption of gallium on GaN(0001) surface in ammonia-rich conditions: a new effect associated with the Fermi level position
Journal of Crystal Growth - August 2014; 401:78-81
- Jakub Soltys, Maria Ptasinska, Jacek Piechota, and Stanislaw Krukowski
Density functional study of GaN(0001)/AlN(0001) high electron mobility transistor structures
Journal of Crystal Growth - August 2014; 401:30-32
- Stanislaw Krukowski, Pawel Kempisty, Pawel Strak and Konrad Sakowski
Fermi level pinning and the charge transfer contribution to the energy of adsorption at semiconducting surfaces
Journal of Applied Physics - 31 January 2014; 115: 043529-1-9
- Jolanta Borysiuk, Jakub Soltys, Jacek Piechota, Stanislaw Krukowski, Jacek M. Baranowski, and Roman Stepniewski
Structural defects in epitaxial graphene layers synthesized on
C-terminated 4H-SiC (000_1) surface - transmission electron microscopy and density functional theory studies
Journal of Applied Physics - 6 February 2014; 115: 054310-1-8
- Pawel Kempisty, Pawel Strak, Konrad Sakowski, Stanislaw Krukowski
General aspects of the vapor growth of semiconductor crystals - a study based on DFT simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient
Journal of Crystal Growth - 15 March 2014; 390: 71-9
2013
- Stanislaw Krukowski, Pawel Kempisty, Pawel Strak
Foundations of ab initio simulations of electric charges and fields at semiconductor surfaces within slab models
Journal of Applied Physics - 11 October 2013; 114: 143705-1-12
- Stanislaw Krukowski, Pawel Kempisty, Pawel Strak
Fermi level influence on the adsorption at semiconductor surfaces - ab initio simulations
Journal of Applied Physics - 9 August 2013; 114:063507-1-10
- Maria Ptasinska, Jakub Soltys, Jacek Piechota, Stanislaw Krukowski
Electronic properties on GaN(000_1) surface - ab initio investigation
Vacuum - 24 May 2013; 99: 166-74
- Pawel Strak, Pawel Kempisty, Maria Ptasinska, and Stanislaw Krukowski
Principal physical properties of GaN/AlN multiquantum well (MQWs) systems determined by density functional theory (DFT) calculations
Journal of Applied Physics - 17 May 2013; 113: 193706-1-15
- Jakub Soltys, Jacek Piechota, Michal ?opuszynski, and Stanislaw Krukowski
Density functional theory (DFT) study of Zn, O2 and O adsorption on polar ZnO(0001) and ZnO (000_1) surfaces
Journal of Crystal Growth - 6 April 2013; 374: 53-59
- Magdalena A. Zaluska-Kotur, Filip Krzyzewski, Stanislaw Krukowski, Robert Czernecki, and Michal Leszczynski
Structures built by steps motion during sublimation from annealed GaN(0001) surface
Crystal Growth and Design - 6 February 2013; 13: 1006-13
- Pawel Strak, Pawel Kempisty, Maria Ptasinska and Stanislaw Krukowski
DFT modeling of AlN/GaN multi quantum wells
Physica Status Solidi C - 23 January 2013; 10: 323-6
2012
- Pawel Kempisty and Stanislaw Krukowski
On the nature of Surface States Stark Effect at clean GaN(0001) surface
Journal of Applied Physics - 5 December 2012; 112: 113704-1-9
- Pawel Kempisty, Pawel Strak, Stanislaw Krukowski and Konrad Sakowski
Erratum: "Ab initio studies of electronic properties of bare GaN(0001) surface " [J. Appl. Phys. 106 (2009) 054901]
Journal of Applied Physics - 31 May 2012; 111: 109905-1-2
- Pawel Kempisty and Stanislaw Krukowski
Ab initio investigation of adsorption of atomic and molecular
hydrogen at GaN(0001) surface
Journal of Crystal Growth - 13 August 2012; 358: 64-74
- Pawel Strak, Zbigniew R. Zytkiewicz and Stanislaw Krukowski
Control of growth uniformity of III-V bulk crystals grown by contactless liquid phase electroepitaxy
Journal of Crystal Growth - 26 June 2012; 355: 1-7
- Konrad Sakowski, Leszek Marcinkowski, Stanislaw Krukowski, Szymon Grzanka and Elzbieta Litwin-Staszewska
Simulation of trap-assisted tunneling effect on characteristics of
gallium nitride diodes
Journal of Applied Physics - 27 June 2012; 111: 123115-1-7
- Jakub Soltys, Jolanta Borysiuk, Jacek Piechota and Stanislaw Krukowski
Experimental and theoretical investigation of graphene layers on SiC(000_1) in different stacking arrangements
Journal of Vacuum Science and Technology B - 15 May 2012; 30: 03D117-1-6
- Pawel Kempisty, Pawel Strak, and Stanislaw Krukowski
Ab initio study of the properties of GaN(0001) surface at MOVPE and HVPE growth conditions
Physica Status Solidi C - 1 March 2012; 9: 826-9
- Magdalena A. Zaluska-Kotur, Filip Krzyzewski, and Stanislaw Krukowski
Emergence of regular, meandered step structure of GaN(0001) surface during simulated crystal growth process
Journal of Crystal Growth - 28 January 2012; 343: 138-44
- Jolanta Borysiuk, Jakub Soltys, Rafal Bozek, Jacek Piechota, Stanislaw Krukowski, Wlodzimierz Strupinski, Jacek M. Baranowski, and Roman Stepniewski
Role of structure of C-terminated 4H-SiC(0001) surface in growth of graphene layers - transmission electron microscopy and density functional theory studies
Physical Review B - 18 January 2012; 85: 045426-1-7
- Pawel Kempisty, Pawel Strak, and Stanislaw Krukowski
Erratum to "Ab initio determination of atomic structure and energy of surface states of bare and hydrogen covered GaN (0001) surface - existence of the Surface States Stark Effect (SSSE)" [Surf. Sci. 605 (2011) 695-713]
Surface Science - 05 January 2012; 606: 571-2
2011
- Zbigniew R. Zytkiewicz, Pawel Strak, and Stanislaw Krukowski
Unlimited growth of III-V bulk crystals by liquid phase electroepitaxy
Crystal Growth and Design - 18 August 2011; 11: 4684-4689
- Magdalena A. Zaluska-Kotur, Filip Krzyzewski, Stanislaw Krukowski
Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions.
Journal of Applied Physics - 20 January 2011; 109: 023515-1-9
- Pawel Strak, Stanislaw Krukowski
Determination of Shear Viscosity of Molecular Nitrogen (N2): Molecular Dynamic Hard Rotor
Methodology and the Results
Journal of Physical Chemistry B - 25 March 2011; 115: 4359-68
- Michal Leszczynski, Robert Czernecki, Stanislaw Krukowski, Marcin Krysko, Grzegorz Targowski, Pawel Prystawko, Jerzy Plesiewicz, Piotr Perlina, and Tadeusz Suski
Indium incorporation into InGaN and InAlN layers grown by metalorganic vapor phase epitaxy
Journal of Crystal Growth - 1 March 2011; 318: 496-9
- Zbigniew R. Zytkiewicz, Pawel Strak, and Stanislaw Krukowski
Time dependent simulations of the growth of III-V crystals by the liquid phase electroepitaxy
Journal of Crystal Growth 1 March 2011; 318: 351-355
- Pawel Kempisty, Pawel Strak and Stanislaw Krukowski
Ab initio determination of atomic structure and energy of surface states of bare and hydrogen covered GaN (0001) surface - existence of the Surface States Stark Effect (SSSE)
Surface Science 12 January 2011; 605: 695-713
2010
- Izabella Grzegory, Michal Bockowski, Pawel Strak, Stanislaw Krukowski, Sylwester Porowski
The influence of indium on the growth of GaN from solution under high pressure
Journal of Crystal Growth 2010; 312(18): 2593-8
- Pawel Strak, Zbigniew R. Zytkiewicz, Konrad Sakowski, and Stanislaw Krukowski
Numerical analysis of growth kinetics of bulk III-V crystals by liquid phase electroepitaxy
Crystal Research and Technology 17 September 2010;45:1290-4
- Zbigniew Romanowski, Pawel Kempisty, Konrad Sakowski, Pawel Strak, and Stanislaw Krukowski
Density Functional Theory (DFT) simulations and polarization analysis of the electric field in InN/GaN multiple quantum wells (MQWs)
Journal of Physical Chemistry C. 9 August 2010; 114:14410-6
- Magdalena A. Zaluska-Kotur, Filip Krzyzewski and Stanislaw Krukowski
Surface patterns due to step flow anisotropy formed in the crystal growth process
Journal of Noncrystalline Solids 9 June 2010; 356:1935-9
- Zbigniew Romanowski, Pawel Kempisty, Jolanta Prywer, Stanislaw Krukowski and Agnieszka Torzewska
Density Functional Theory Determination of Structural and Electronic Properties of Struvite
Journal of Physical Chemistry A. 29 June 2010; 114:7800-8
- Julita Smalc-Koziorowska, Szymon Grzanka, Elzbieta Litwin-Staszewska, Ryszard Piotrzkowski, Grzegorz Nowak, Michal Leszczynski, Piotr Perlin, Ewa Talik, Jan Kozubowski, Stanislaw Krukowski
Ni-Au contacts to p-type GaN - structure and properties
Solid State Electronics. 1 July 2010; 54: 701-9
- Jakub Soltys, Jacek Piechota, Michal Lopuszynski and Stanislaw Krukowski
A comparative DFT study of electronic properties of 2H-, 4H- and 6H-SiC(0001) and SiC(0001) clean surfaces: significance of the surface Stark effect
New Journal of Physics. 13 April 2010; 12: 043024-1-18
2009
- Zbigniew Romanowski, Stanislaw Krukowski
Derivation of von Weizsacker equation based on BLUE-Gauss theorem
Acta-Physica-Polonica-A. March 2009; 115(3):653-5
- Stanislaw Krukowski, Pawel Kempisty and Pawel Strak
Review: GaN growth by ammonia based methods - density functional theory study
Crystal Research and Technology. 1 October 2009; 44: 1038-48;
- Pawel Kempisty, Stanislaw Krukowski, Pawel Strak and Konrad Sakowski
Ab initio studies of electronic properties of bare GaN(0001) surface
Journal of Applied Physics. 2 September 2009; 106: 054901-1-10;
- Stanislaw Krukowski, Pawel Kempisty and Pawel Strak
Electrostatic condition for the termination of the opposite face of the slab in DFT simulations of semiconductor surfaces
Journal of Applied Physics. 1 June 2009; 105: 113701-1-5;
2008
- Pawel Strak and Stanislaw Krukowski
Molecular dynamic simulations of viscosity of Argon at high pressures
High-Pressure-Research. 1 December 2008; 28:469?476
- Stanislaw Krukowski, Pawel Kempisty and Abraham F. Jalbout
Thermodynamic and kinetic approach in DFT studies of microscopic structure of GaN(0001) surface in ammonia-rich conditions
Journal of Chemical Physics. 17 December 2008; 129: 234705-1-12; DOI:10.1063/1.3037218
- P. Perlin, T. Swietlik, L. Marona, R. Czernecki, T. Suski, M. Leszczynski, I. Grzegory, S. Krukowski, G. Nowak, G. Kamler, A. Czerwinski, M. Plusa, M. Bednarek, J. Rybinski, S. Porowski
Fabrication and properties of GaN-based lasers
Journal-of-Crystal-Growth. 7 June 2008; 310: 3979-82
- M. Siekacz, A. Feduniewicz- Zmuda, G. Cywi?ski, M. Krysko, J. Smalc, I. Grzegory, S. Krukowski, K. E. Waldrip, W. Jantsch, Z. R. Wasilewski, S. Porowski and C. Skierbiszewski
Growth of InGaN and InGaN/InGaN Quantum Wells by Plasma Assisted Molecular Beam Epitaxy
Journal-of-Crystal-Growth. 7 June 2008; 310: 3983-6
- Romanowski Zbigniew, Krukowski Stanislaw and Abraham F. Jalbout
Transformation of real spherical harmonics under rotations
Acta-Physica-Polonica-B. 1 August 2008; 39(8): 1985-91
- Pawel Strak and Stanislaw Krukowski
The role of the intermolecular potential in determination of equilibrium and dynamic properties of molecular nitrogen (N2): MD simulations
Journal-of-Physics:-Conference-Series. 2008; 121: 012011
- Stanislaw Krukowski, Pawel Strak, Pawel Kempisty
Role of chlorine in the dynamics of GaN(0001) surface during HVPE GaN growth: Ab initio study
Journal-of-Crystal-Growth. 2008; 310: 1391-7
- Romanowski Zbigniew and Krukowski Stanislaw
Numerical evoluation of overlap integrals between atomic orbitals
Journal-of-Molecular-Structure:-THEOCHEM. 15 January 2008; 848(1-3): 34-9
- Pawel Kempisty and Stanislaw Krukowski
Crystal growth of GaN on (0001) face by HVPE: Ab initio simulations
Journal-of-Crystal-Growth. 2008; 310: 900-5
2007
- Zbigniew Romanowski and Stanislaw Krukowski
Transformation of complex spherical harmonics under rotations
Journal-of-Physics-A:-Mathematical-and-Theoretical. 2007; 40, 15071-82
- Czernecki Robert, Krukowski Stanislaw, Targowski Grzegorz, Prystawko Pawel, Sarzynski Marcin, Krysko Marcin, Kamler Grzegorz, Grzegory Izabella, Leszczynski Michal and Porowski Sylwester
Strain-compensated AlGaN/GaN/ InGaN cladding layers in homoepitaxial nitride devices
Applied Physics Letters. 6 December 2007: 91, 231914-6
- M. Krysko, G. Franssen, T. Suski, M. Albrecht, B. Lucznik, I. Grzegory, S. Krukowski, R. Czernecki, S. Grzanka, I. Makarowa, M. Leszczy?ski, and P. Perlin
Correlation between luminescence and compositional striations in InGaN layers grown on miscut GaN substrates
Applied Physics Letters. 21 November 2007: 91, 211904
- S. Krukowski, P. Kempisty, P. Strak, G. Nowak, R. Czernecki, M. Leszczynski, T. Suski, M. Bockowski, and I. Grzegory
Modelling the growth of nitrides in ammonia-rich environment
Crystal-Research-and-Technology. 2007; 42: 1281
- Bockowski Michal, Strak Pawel, Kempisty Pawel, Grzegory Izabella, Krukowski Stanislaw, Lucznik Boleslaw and Porowski Sylwester
High pressure - high temperature seeded growth of GaN on 1 in sapphire/GaN templates: Analysis of convective transport
Journal-of-Crystal-Growth. 2007; 307(2): 259-67
- Bockowski Michal, Grzegory Izabella, Kamler Grzegorz, Lucznik Boleslaw, Krukowski Stanislaw, Wroblewski Miroslaw, Kwiatkowski Pawlel, Jasik Krzysztof, Porowski Sylwester
Platelets and needles: two habits of pressure-grown GaN crystals
Journal-of-Crystal-Growth. 2007; 305(2): 414-20
- Krukowski Stanislaw, Grzegory Izabella, Bockowski Michal, ?ucznik Boleslaw, Wr?blewski Miroslaw, Porowski Sylwester
Adsorption and dissolution of nitrogen in lithium - QM DFT investigation
Journal-of-Crystal-Growth. 15 June 2007; 304(2): 299-309
- Pawel Kempisty and Stanislaw Krukowski
Crystal growth of GaN on (0001) face by HVPE - atomistic scale simulation
Journal-of-Crystal-Growth. 1 May 2007; 303(1): 37-43
- Jolanta Prywer and Stanislaw Krukowski
Growth of 2D nuclei - a Monte Carlo study of existence of various habits
Journal-of-Crystal-Growth. 1 May 2007; 303(1): 23-9
- Zaluska-Kotur MA; Krukowski S; Lusakowski A; Turski LA
Domain growth in the interacting adsorbate: Nonsymmetric particle jump model
Physical-Review-B-Condensed-Matter-and-Materials-Physics. 15 March 2007; 75(11): 115412-1-6
- Strak P; Krukowski S
Molecular nitrogen-N2 properties: The intermolecular potential and the equation of state
Journal of Chemical Physics, vol.126, 16 May 2007, pp.194501-11
2006
- M. Bockowski, G. Nowak, G. Kamler, B. Lucznik, M. Wr?blewski, P. Kwiatkowski, K. Jasik, S. Krukowski, S. Porowski, and I. Grzegory
Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method
Proceeding SPIE 3 March 2006 6121; 612103
- Krukowski-S; Skierbiszewski-C; Perlin-P; Leszczynski-M; Bockowski-M; Porowski-S
Blue and UV semiconductor lasers
Acta-Physica-Polonica-B. 1 April 2006; 37(4): 1265-312
- Bockowski-M; Grzegory-I; Nowak-G; Lucznik-B; Pastuszka-B; Kamler-G; Wroblewski-M; Kwiatkowski-P; Jasik-K; Wawer-W; Krukowski-S; Porowski-S
Growth of GaN on patterned thick HVPE free standing GaN substrates by high pressure solution method
Physica-Status-Solidi-C. 2006; (6): 1487-90
- Lucznik-B; Pastuszka-B; Grzegory-I; Bockowski-M; Kamler-G; Domagala-J; Nowak-G; Prystawko-P; Krukowski-S; Porowski-S
Crystallization of free standing bulk GaN by HVPE
Physica-Status-Solidi-C. 2006; (6): 1453-6
- Krukowski S; Kempisty P; Lucznik B; Pastuszka B; Grzegory I; Bockowski M; Porowski S
CFD and reaction computational analysis of the growth of GaN by HVPE method
Journal-of-Crystal-Growth. 15 Oct. 2006; 296(1): 31-42
- Grzegory-I; Lucznik-B; Bockowski-M; Pastuszka-B; Kamler-G; Nowak-G; Krysko-M; Krukowski-S; Porowski-S
Crystallization of GaN by HVPE on pressure grown seeds
Physica-Status-Solidi-A. May 2006; 203(7): 1654-7
- Kempisty-P; Grzegory-I; Bockowski-M; Krukowski-S; Lucznik-B; Pastuszka-B; Porowski-S
Mass flow and reaction analysis of the growth of GaN by HVPE
Physica-Status-Solidi-A. Jan. 2006; 203(1): 131-4
- Lepkowski-SP; Krukowski-S
Theoretical study of current overflow in GaN based light emitters with superlattice cladding layers
Journal-of-Applied-Physics. 1 July 2006; 100(1): 16103-1-3
- Krukowski-S; Strak-P
Equation of state of nitrogen (N2 at high pressures and high temperatures: molecular dynamics simulation
Journal-of-Chemical-Physics. 7 April 2006; 124(13): 134501-1-9
- Swietlik-T; Franssen-G; Wisniewski-P; Krukowski-S; Lepkowski-SP; Marona-L; Leszczynski-M; Prystawko-P; Grzegory-I; Suski-T; Porowski-S; Perlin-P; Czernecki-R; Bering-Staniszewska-A; Eliseev-PG
Anomalous temperature characteristics of single wide quantum well InGaN laser diode
Applied-Physics-Letters. 13 Feb. 2006; 88(7): 71121-1-3
2005
- Krukowski-S; Grzegory-L; Bockowski-M; Lucznik-B; Suski-T; Nowak-G; Borysiuk-J; Wroblewski-M; Leszczynski-M; Perlin-P; Porowski-S; Weyher-JL
Growth of AlN, GaN and InN from the solution
International-Journal-of-Materials-and-Product-Technology. 2005; 22(1-3): 226-61
- Bockowski-M; Grzegory-I; Borysiuk-J; Kamler-G; Lucznik-B; Wroblewski-M; Kwiatkowski-P; Jasik-K; Krukowski-S; Porowski-S
Growth of GaN on patterned GaN/sapphire substrates by high pressure solution method
Journal-of-Crystal-Growth. 15 July 2005; 281(1): 11-16
- Prywer-J; Krukowski-S
A Monte Carlo study of the dependence of the habits of Kossel crystal on dynamic parameters during two-dimensional growth
Crystal-Research-and-Technology. April 2005; 40(4-5): 340-6
- Bockowski-M; Grzegory-I; Krukowski-S; Lucznik-B; Wroblewski-M; Kamler-G; Borysiuk-J; Kwiatkowski-P; Jasik-K; Porowski-S
Gallium nitride growth on sapphire/GaN templates at high pressure and high temperatures
Journal-of-Crystal-Growth. 15 Jan. 2005; 274(1-2): 55-64
2004
- Bockowski M, Grzegory I, Lucznik B, Krukowski S, Wroblewski M, Kwiatowski P, Jasik K, Wawer W, Borysiuk J, Kamler G, Porowski S
Growth of bulk GaN on GaN/sapphire templates by a high N2 pressure method
Physica-Status-Solidi-B. Oct. 2004; 241(12): 2685-8
- Bockowski-M; Grzegory-I; Krukowski-S; Lucznik-B; Wroblewski-M; Kamler-G; Borysiuk-J; Kwiatkowski-P; Jasik-K; Porowski-S
Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates
Journal-of-Crystal-Growth. 1 Oct. 2004; 270(3-4): 409-19
- M. A. Zaluska-Kotur, A. Lusakowski, S. Krukowski and L. A. Turski
Collective diffusion of O/W(1 1 0) at high coverages: Monte Carlo simulations
Surface Science, vol. 566-568, Part 1, 20 September 2004, Pages 210-215
- Porowski S, Grzegory I, Krukowski S, Leszczynski M, Perlin R, Suski T
Blue lasers on high pressure grown GaN single crystal substrates
Europhysics News, vol.35, no.3, May-June 2004, pp.69-73
2003
- Jezowski A, Stachowiak P, Plackowski T, Suski T, Krukowski S, Bockowski M, Grzegory I, Danilchenko B, Paszkiewicz T
Thermal conductivity of GaN crystals grown by high pressure
Physica Status Solidi B-Basic Research, vol. 240, 2003, pp.447-50
- Jezowski A, Stachowiak P, Suski T, Krukowski S, Bockowski M, Grzegory I, Danilchenko B
Thermal conductivity of bulk GaN single crystals
Physica B, vol.329-333, 2003, pp.1531-2
- Jezowski A, Danilchenko BA, Bockowski M, Grzegory I, Krukowski S, Suski T, Paszkiewicz T
Thermal conductivity of GaN crystals in 4.2-300 K range
Solid State Communications, vol.128, no.2-3, 2003, pp.69-73
- Paszkowicz W, Cerny R, Krukowski S
Rietveld refinement for indium nitride in the 105-295 K range
Powder Diffraction, vol.18, no.2, June 2003, pp.114-21
- Zaluska-Kotur MA, Krukowski S, Turski LA
Collective diffusion in a twin-spin model of O/W(110)
Physical Review B-Condensed Matter, vol.67, no.15, 15 April 2003, pp.155406-17
2002
- Bockowski M, Grzegory I, Krukowski S, Lucznik B., Wroblewski M, Romanowski Z, Borysiuk J, Weyher J, Hageman P, Porowski S
Directional crystallization of GaN on high-pressure direct solution grown substrates by growth from solution and HVPE
Journal of Crystal Growth, vol. 246, 2002, pp.194-206
- Grzegory I, Bockowski M, Lucznik B, Krukowski S, Romanowski Z, Wroblewski M, Porowski
Mechanisms of crystallization of bulk GaN from the solution under high N2 pressure
Journal of Crystal Growth, vol. 246, 2002, pp.177-86
- Bockowski M, Lucznik B, Grzegory I, Wroblewski M, Krukowski S, Porowski S
High-pressure direct synthesis of aluminium nitride
Journal-of-Physics:-Condensed-Matter. 11 Nov. 2002; 14(44): 11237-42
- Porowski S, Grzegory I, Kolesnikov D, Lojkowski W, Jager V, Jager W, Bogdanov V, Suski T, Krukowski S
Annealing of GaN under high pressure of nitrogen
Journal-of-Physics:-Condensed-Matter. 11 Nov. 2002; 14(44): 11097-110
- Zaluska-Kotur MA, Lusakowski A, Krukowski S, Romanowski Z, Turski LA
Diffusion and desorption processes in ordered (2x2) lattice gas phase
Surface Science, vol. 507-510, 2002, pp. 150-4
- Krukowski S
Microscopic theory of some thermodynamic properties of the solid-vapor transition
Journal of Chemical Physics, vol.117, no.12, 22 Sept. 2002, pp.5866-75
- Zaluska-Kotur MA, Krukowski S, Romanowski Z, Turski LA
Twin spin model of surface phase transition in O/W(110)
Physical Review B, vol.65, no.4, 15 Jan. 2002, pp.045404/1-9
2001
- Grzegory I, Bockowski M, Krukowski S, Lucznik B, Wroblewski M, Weyher JL, Leszczynski M, Prystawki P, Czernecki R, Lehnert J, Nowak G, Perlin P, Teisseyre H, Purgal W, Krupczynski W, Suski T, Dmowski L, Litwin-Staszewska E, Skierbiszewski C, Lepkowski S, Porowski S
Blue Laser on High N2 Pressure-Grown Bulk GaN
Acta Physica Polonica A Supplement vol 100 Dec. 2001 pp.229-32
- Grzegory I, Krukowski S, Leszczynski M, Perlin P, Suski T, Porowski S
The application of high pressure in physics and technology of III-V nitrides
Acta Physica Polonica A Supplement vol 100 Dec. 2001 pp.57-109
- Romanowski Z, Krukowski S, Grzegory I, Porowski S
Surface reaction of nitrogen with liquid group III metals
Journal of Chemical Physics, vol.114, no.14, 8 April 2001, pp.6353-63
- Zaluska-Kotur MA, Krukowski S, Romanowski Z, Turski LA
Collective diffusion of O atoms on the W(110) Surface
Defect and Diffusion Forum, vol. 194-199 2001, pp.309-14
- Zaluska-Kotur MA, Krukowski S, Turski LA
Driven diffusion in a model of the O/W(110) system
Collective Diffusion at Surfaces: Correlation Effects and Adatom Interactions M.C.Tringides and Z. Chvoj (eds.) Kluwer 2001 pp.59-69
- Zaluska-Kotur MA, Lusakowski A, Krukowski S, Romanowski Z, Turski LA
Chemical surface diffusion analysis by the time evolution of density profiles. The Monte Carlo simulations
Vacuum, vol.63, no.1-2, 2 July 2001, pp.127-33
- Frayssinet E, Knap W, Krukowski S, Perlin P, Wisniewski P, Suski T, Grzegory I, Porowski S
Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals
Journal of Crystal Growth, vol.230, no.3-4, Sept. 2001, pp. 442-7
- Krukowski S, Bockowski M, Lucznik B, Grzegory I, Porowski S, Suski T, Romanowski Z
High-nitrogen-pressure growth of GaN single crystals: doping and physical properties
Journal of Physics-Condensed Matter, vol.13, no.40, 8 Oct. 2001, pp.8881-9
2000
- Palczewska M, Wolos A, Kaminska M, Grzegory I, Bockowski M, Krukowski S, Suski T, Porowski S
Electron spin resonance of erbium in gallium nitride
Solid State Communications, vol.114, no.1, 2000, pp.39-42
- Zaluska-Kotur MA, Krukowski S, Romanowski Z, Turski LA
Spreading of step-like density profiles in interacting lattice gas on a hexagonal lattice
Surface Science, vol.457, no.3, 10 June 2000, pp.357-64
1999
- Krukowski S
Growth of GaN single crystals under high nitrogen pressures and their characterization
Crystal Research & Technology, vol.34, no.5-6, 1999, pp.785-95
- Porowski S, Jun J, Krukowski S, Grzegory I, Leszczynski M, Suski T, Teisseyre H, Foxon CT, Korakakis D
Annealing of gallium nitride under high-N2 pressure
Physica B, vol.265, no.1-4, April 1999, pp.295-9
- Zaluska-Kotur MA, Krukowski S, Turski LA
Collective diffusion on hexagonal lattices-repulsive interactions
Surface Science, vol.441, no.2-3, 1 Nov. 1999, pp.320-8
- Krukowski S, Tedenac JC.
Surface diffusion contribution to dendrite sidebranching during growth of 2D Kossel crystal from the vapor
Journal of Crystal Growth, vol.203, no.1-2, May 1999, pp.269-85
- Paszkowicz W, Adamczyk J, Krukowski S, Leszczynski M, Porowski S, Sokolowski JA, Michalec M, Lasocha W.
Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium
Philosophical Magazine A-Physics of Condensed Matter Defects & Mechanical Properties, vol.79, no.5, May 1999, pp.1145-54
1998
- Lucznik B, Bockowski M, Wroblewski M, Grzegory I, Krukowski S, Nowak G, Leszczynski M, Teisseyre G, Pakula K, Baranowski JM, Suski T, Porowski S
GaN Single Crystals Grown by High Pressure Solution Method
Revues in High Pressure Science and Technology vol. 7 1998 pp.760-2
- Porowski S, Grzegory I, Krukowski S
Thermodynamics and growth of GaN single crystals under pressure
High-Pressure Materials Research. Symposium. Mater. Res. Soc. 1998, pp.349-60
- Grzegory I, Bockowski M, Lucznik B, Wroblewski M, Krukowski S, Weyher J, Nowak G, Suski T, Leszczynski M, Teisseyre H, Suski T, Litwin-Staszewska E, Porowski S
GaN crystals: growth and doping under pressure
Nitride Semiconductors Symposium. Mater. Res. Soc. 1998, pp.15-26
- Krukowski S, Bockowski M, Grzegory I, Lucznik B, Nowak G, Wroblewski M, Leszczynski M, Teisseyre G, Suski T, Porowski S
Recent results in high pressure growth of GaN single crystals
Proceedings of the Second Symposium on III-V Nitride Materials and Processes. Electrochem. Soc. 1998, pp.189-200
- Krukowski S, Romanowski Z, Grzegory I, Porowski S
Interaction of N2 molecule with liquid Ga surface-quantum mechanical calculations (DFT)
Journal of Crystal Growth, vol.189-190, June 1998, pp.159-6
- Witek A, Bockowski M, Presz A, Wroblewski M, Krukowski S, Wlosinski W, Jablonski K
Synthesis of oxygen-free aluminium nitride ceramics
Journal of Materials Science, vol.33, no.13, 1 July 1998, pp.3321-4
- Prywer J, Krukowski S.
GaN single crystal habits and their relation to GaN growth under high pressure of nitrogen
MRS Internet Journal of Nitride Semiconductor Research, vol.3, 1998
- Krukowski S, Witek A, Adamczyk J, Jun J, Bockowski M, Grzegory I, Lucznik B, Nowak G, Wroblewski M, Presz A, Gierlotka S, Stelmach S, Palosz B, Porowski S, Zinn P
Thermal properties of indium nitride.
Journal of Physics & Chemistry of Solids, vol.59, no.3, March 1998, pp.289-95
1997
- Bockowski M, Witek A, Krukowski S, Wroblewski M, Porowski S, Marin-Ayral RM, Tedenac JC
Combustion synthesis of aluminum nitride under high pressure of nitrogen and nitrogen-argon mixtures
Journal of Materials Synthesis & Processing, vol.5, no.6, Nov. 1997, pp.449-58
- Porowski S, Bockowski M, Lucznik B, Wroblewski M, Krukowski S, Grzegory I, Leszczynski M, Nowak G, Pakula K, Baranowski JM
GaN crystals grown in the increased volume high pressure reactors
III-V Nitrides. Symposium. Mater. Res. Soc. 1997, pp.35-40
- Krukowski S.
Thermodynamics and high-pressure growth of (Al,Ga,In)N single crystals
Diamond & Related Materials, vol.6, no.10, Aug. 1997, pp.1515-23
1996
- Porowski S, Baranowski JM, Leszczynski M, Jun J, Bockowski M, Grzegory I, Krukowski S, Wroblewski M, Lucznik B, Nowak G, Pakula K, Wysmolek A, Korona KP, Stepniewski R
Physical properties of GaN single crystalline substrates and homoepitaxial layers
Blue Laser and Light Emitting Diodes. Ohmsha. 1996, pp.38-41
- Nowak G, Krukowski S, Grzegory I, Baranowski J, Pakula K.
Polarity dependent surface morphology of bulk GaN crystals
23rd International Conference on the Physics of Semiconductors. World Scientific. Part vol.1, 1996, pp.557-60 vol.1
- Porowski S, Baranowski JM, Leszczy?ski M, Jun J, Bockowski M, Grzegory I, Krukowski S, Wr?blewski M, ?ucznik B, Nowak G, Paku?a K, Wysmo?ek A, Korona KP, Stepniewski R
Physical Properties of GaN Single Crystalline Substrates and Homoepitaxial Layers
Proceedings of the International Symposium on Blue Laser and Light Emitting Diodes, eds. A. Yoshikawa, K. Kishino, M. Kobayashi, T. Yasuda, Tokyo, Ohsmsha (1996) p.38
- Krukowski S, Grzegory I, Bockowski M, Jun J, ?ucznik B, Witek A Wr?blewski M, Baranowski JM, Porowski S, Adamczyk J
Nitrogen high pressure influence on GaN crystal growth conditions - a computational analysis
Proceedings of the Joint XV AIRAPT and XXXIII EHPRG International Conference ed. W. Trzeciakowski, Singapore, World Scientific 1996, pp. 264-6
- Krukowski S
Temperature distribution in the chamber used for crystal growth of GaN under high pressure of nitrogen
MRS Internet Journal of Nitride Semiconductor Research, vol.1, 1996
- Grzegory I, Bockowski M, Lucznik B, Krukowski S, Wroblewski M, Porowski S
Recent results in the crystal growth of GaN at high N2 pressure
MRS Internet Journal of Nitride Semiconductor Research, vol.1, 1996
- Teisseyre H, Nowak G, Leszczynski M, Grzegory I, Bockowski M, Krukowski S, Porowski S, Mayer M, Pelzmann A, Kamp M, Ebeling KJ, Karczewski G
Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
MRS Internet Journal of Nitride Semiconductor Research, vol.1, 1996
- Pakula K, Wysmolek A, Korona KP, Baranowski JM, Stepniewski R, Grzegory I, Bockowski M, Jun J, Krukowski S, Wroblewski M, Porowski S
Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates.
Solid State Communications, vol.97, no.11, March 1996, pp.919-22
- Krukowski S, Tedenac JC
Fractal to compact transition during growth of 2D Kossel crystal in vapor diffusion field
Journal of Crystal Growth, vol.160, no.1-2, March 1996, pp.167-76
1995
- Grzegory I, Jun J, Bockowski M, Krukowski S, Wroblewski M, Lucznik B, Porowski S
III-V nitrides-thermodynamics and crystal growth at high N2 pressure.
Journal of Physics & Chemistry of Solids, vol.56, no.3-4, March-April 1995, pp.639-47
1994
- Tedenac JC, Jun J, Krukowski S, Bockowski M, Porowski S, Record M C, Ayral-Marin RM, Brun G
Phase Diagram Determination of II-VI Semiconductors
Thermochimica Acta vol. 245 1994 p. 207
- Grzegory I, Jun J, Bo?kowski M, Krukowski St, Porowski S
Thermodynamical properties of AlN, GaN and InN
Proceedings of the 8th Conf. on Semi-insulating III-V Materials, Warsaw June 6-10 1994, ed by M. Godlewski, pp.73-6
- Porowski S, Jun J, Bo?kowski M, Leszczynski M, Krukowski St, Wr?blewski M ?ucznik B, Grzegory I
III-V nitrides - conditions for crystal growth at high N2 pressure
Proceedings of the 8th Conf. on Semi-insulating III-V Materials, Warsaw June 6-10 1994, ed by M. Godlewski, pp.61-8
- Bockowski M, Grzegory I, Wroblewski M, Witek A, Jun J, Krukowski S, Porowski S, Ayral-Marin RM, Tedenac JC
Combustion synthesis of AlN at high pressure of nitrogen and argon mixtures
American Institute of Physics Conference Proceedings, no.309, pt.2, 1994, pp.1255-8
- Grzegory I, Krukowski S, Jun J, Bockowski M, Wroblewski M, Porowski S
Stability of indium nitride at N2 pressure up to 20 kbar.
American Institute of Physics Conference Proceedings, no.309, pt.1, 1994, pp.565-8
- Porowski S, Jun J, Krukowski S, Bockowski M, Tedenac JC, Record MC
High pressure differential thermal analysis (DTA) and crystal growth of α-HgS.
American Institute of Physics Conference Proceedings, no.309, pt.1, 1994, pp.485-8
1993
- Krukowski S, Turski LA
Diffusion in the distortion field of a dislocation line
Physics Letters A, vol.175, no.5, 19 April 1993, pp.349-52
- Grzegory I, Jun J, Krukowski St, Bockowski M, Porowski S
Crystal growth of III-N compounds under high nitrogen pressure
Physica B, vol.185, no.1-4, April 1993, pp.99-102
- Grzegory I, Jun J, Krukowski S, Porowski S.
GaP-GaN pseudobinary system. Crystal growth of GaN from the solution in the liquid GaP.
Japanese Journal of Applied Physics, Supplement, vol.32, suppl.32-1, 1993, pp.346-8
- Grzegory I, Jun J, Krukowski S, Perlin P, Porowski S.
InN thermodynamics and crystal growth at high pressure of N2
Japanese Journal of Applied Physics, Supplement, vol.32, suppl.32-1, 1993, pp.343-5
- Tedenac JC, Record MC, Ayral-Marin RM, Brun G, Jun J, Grzegory I, Krukowski S, Bockowski M
Phase transformations and p-T diagram of some HgX compounds (X=S, Se, Te)
Japanese Journal of Applied Physics, Supplement, vol.32, suppl.32-1, 1993, pp.26-30
1992
- ?ucznik B, Bo?kowski M, Krukowski S
High Pressure High Temperature Thermal Determination of Triple Point in CdSe
High Pressure Research, vol. 10, 1992, pp.420-4
- Bockowski M, Krukowski S, Lucznik B
DTA determination of the high-pressure-high-temperature phase diagram of CdSe
Semiconductor Science & Technology, vol.7, no.7, July 1992, pp.994-8
1991
- Grzegory I, Krukowski S
Synthesis and crystal growth of AIIIBV semiconducting compounds under high pressure of nitrogen
Physica Scripta, vol.T39, 1991, pp.242-9