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FENG project for GaN/AlGaN/SiC structures
General information - News |
The National Center for Research and Development (NCBiR) as the Intermediate Institution for Priority I FENG 2021 has completed the evaluation of projects submitted in the call no. FENG.01.01-IP.01-005/23 – SMART Path Projects implemented in consortia. The projects were applied for by consortia with or without the participation of a large enterprise. In the latter category, the first place in the ranking list of co-financed projects was taken by the project implemented in the consortium SEEN Semiconductors Sp. z o. o. and the group of Prof. Michał Leszczyński from the NL-12 Laboratory of Semiconductor Characterization.
There are 51 projects (out of 566 applications) that received co-financing for the amount of PLN 686,870,078.42.
Project Title: Conductive GaN/AlGaN/SiC structures for the construction of new generations of vertical electronic devices. Project acronym: "TranzGaN"
The aim of the project is to develop a technology for the growth of a conductive AlGaN:Si buffer on SiC substrates using the MOVPE method. For this purpose, the flow of reagents, temperature, growth pressure and disorientation of SiC substrates will be optimized. The result of this is to prepare a buffer layer with good electrical conductivity and the lowest possible dislocation density in the GaN layer grown on this buffer. This will allow for the production of epitaxial structures of vertical devices such as CAVET transistors, p-i-n diodes or laser diodes, which will significantly expand the scientific experience of the Institute.
Project value: PLN 4,455,429.57
European Funds contribution: PLN 3,752,662.00