Institute of High Pressure Physics

Dear Ladies and Gentlemen,

We are pleased to invite you to the IHPP PAS Seminar on Nitride Semiconductors. The next presentation will be held in a hybrid mode – at the New Technologies seminar room, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).

The next seminar is scheduled on Monday 07.08.2023 at 14:00.

We will have a unique chance to hear two talks (in the standard time frame):

Speaker 1: Kansuke Hamasaki (Nagoya University, Amano Laboratory)

Title: High electron density of Sn-doped GaN layer by HVPE

Title: Investigation of Mg activation of ion-implanted GaN by using Ultra-High-Pressure Annealing

Sincerely,

Tadeusz Suski
Piotr Perlin
Anna Kafar

Dear Ladies and Gentlemen,

We are pleased to invite you to the IHPP PAS Seminar on Nitride Semiconductors. The next presentation will be held in a hybrid mode – at the New Technologies seminar room, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).

The next seminar is scheduled on Monday 03.07.2023 at 14:00.

Speaker: Dr. Wolfram Miller (Leibniz-Institut für Kristallzüchtung IKZ)

Title: Numerical Simulations in Bulk Crystal and Layer Growth

Abstract: (link)

Sincerely,

Tadeusz Suski
Piotr Perlin
Anna Kafar

Dear Ladies and Gentlemen,

We are pleased to invite you to the IHPP PAS Seminar on Nitride Semiconductors. The next presentation will be held in a hybrid mode – at the New Technologies seminar room, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).

The next seminar is scheduled on Monday 26.06.2023 at 14:00.

Speaker: Prof. Bernard Gil (Laboratoire Charles Coulomb, CNRS-Université de Montpellier)

Title: The Optical Properties of Various Polytypes of sp²-bonded Boron Nitride.

Abstract

Sincerely,

Tadeusz Suski
Piotr Perlin
Anna Kafar

Dear Ladies and Gentlemen,

We are pleased to invite you to the IHPP PAS Seminar on Nitride Semiconductors. The next presentation will be held in a hybrid mode – at the New Technologies seminar room, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).

The next seminar is scheduled on Monday 12.06.2023 at 14:00.

Speaker: dr inż. Paweł Prystawko (IHPP PAS, NL-12)

Title: Compensation control of n-type GaN using intrinsic Carbon from TMGa precursor in MOVPE growth for Vertical GaN Power Devices

Abstract:

There is intrinsic residual doping with carbon in MOVPE grown GaN due to presence of carbon in organic precursor chemicals TMG and TEG. Usually n-type layers and unintentionally doped layers grown in standard growth conditions result in carbon incorporation as high as 10^17cm-3. It has been demonstrated that, if carbon content approached silicon donor value, an abrupt drop of electron mobility is observed. We investigated non-standard growth conditions to promote fast methyl radical elimination with active hydrogen originating from decomposed ammonia and resulted in reduction of carbon doping. These are: high growth pressure, high temperature as well as control of supersaturation by means of high V/III group ratio. It allows to reduce residual carbon doping below 1 x 10^16cm-3.

Sincerely,

Tadeusz Suski
Piotr Perlin
Anna Kafar