Lecture
Crystal growth:
Physics, technology, and modeling
Academic year
2021-2022 Semester I
Stanisław Krukowski,
Michał Leszczyński
IWC PAN, Sokołowska
29/37 01-142 Warszawa
Zbigniew Żytkiewicz
IF PAN, Al. Lotników
32-46 02-668 Warszawa
Description
The development of information technologies,
includes the design and fabrication of new electronic devices of nanometer
size, the emergence of new molecular diagnostic techniques (e.g. for medical
purposes) requires understanding of the basics of the methods of design and
fabrication of the new materials and structures. This course will cover
problems of the understanding, design, fabrication and determination of the
properties of nano-structures and nano-materials, forming an introduction to
nanotechnology. Therefore the subject of the lecture will be devoted to the
basic methods of crystal growth, both volumetric, at the macro scale, and
quantum structures of the dimensions in micro and nano range. Currently,
courses in physics, chemistry or material engineering in Poland, both in Warsaw
and in other cities, do not include lectures on the fundamentals of crystal
growth. Therefore the students working in these areas need additional training.
The program proposed below includes a course in the fundamentals of crystal
growth (especially of semiconductors), both from a theoretical point of view
and a review of the main growth techniques and characterization methods. We
assume that this course will not be an exhaustive description of the subject.
Instead, it will provide a sufficient foundation for understanding the field,
while providing a good starting point for further independent study in the future
research work. The course is intended for PhD students that they have mastered
the basics of quantum mechanics, statistical mechanics and solid state physics
at the university level. At the end of the year-long lecture series we foresee
a visit of the students to the crystal growth laboratories of the Institute of
Physics PAS and the Institute of High Pressure Physics PAS in Warsaw. This will
allow interested students to familiarize themselves with the existing
experimental facilities and with details of the research work in progress.
Semester I
- Growth of
semiconductor bulk crystals in Poland and in the world – an overview (Michał
Leszczyński - Institute of High Pressure Physics PAS) 12.10.2021
- Semiconductor
epitaxy in Poland and in the world – an overview (Michał Leszczyński -
Institute of High Pressure Physics PAS) 19.10.2021
- Thermodynamic
equilibrium (Stanislaw Krukowski - Institute of High Pressure Physics
PAS) 26.10.2021
- Properties
of crystal surfaces (Stanislaw
Krukowski - Institute of High Pressure Physics PAS) 02.11.2021
- Thermodynamics
of growth processes (Stanislaw Krukowski - Institute of High Pressure
Physics PAS) 09.11.2021
- Kinetic
processes at surfaces (Stanislaw Krukowski - Institute of High
Pressure Physics PAS) 16.11.2021
- Step
motion (Stanislaw Krukowski - Institute of High Pressure Physics PAS)
23.11.2021
- Transport
in vapor and liquid phase (Stanislaw Krukowski - Institute of High
Pressure Physics PAS) 30.11.2021
- Doping –
point defects (Keshra Sangwal - – Lublin University of Technology) 07.12.2021
- Dislocations
and other extended defects (Keshra Sangwal – Lublin University of
Technology) due to PhD Seminar shifted to 21.12.2021
- Shape
selection and stability during growth (Stanisław Krukowski - Institute
of High Pressure Physics PAS) 04.01.2022
- Modeling
of the growth in macroscale (Stanislaw Krukowski - Institute of High
Pressure Physics PAS) 11.01.2022
- Modeling
of the growth in atomic scale (Stanislaw Krukowski - Institute of High
Pressure Physics PAS) 18.01.2022
- Problems
to be solved (Stanislaw Krukowski - Institute of High Pressure Physics
PAS) 25.01.2022
Semester II
I. Growth of crystals and epitaxial structures
- Growth of bulk
crystals from the melt or solution. (Tomasz Słupiński - Institute of
Physics PAS) 22.02.2022
- Bulk crystal growth
from gas phase (Michał Boćkowski - Institute of High Pressure Physics PAS)
01.03.2022
- Epitaxy – an
introduction (Zbigniew R. Żytkiewicz - Institute of Physics PAS)
08.03.2022
- Molecular beam
epitaxy (Zbigniew R. Żytkiewicz - Institute of Physics PAS) 15.03.2022
- Molecular beam
epitaxy of nitride semiconductors (Zbigniew R. Żytkiewicz - Institute
of Physics PAS) 22.03.2022
- Gas
phase epitaxy (Michał
Leszczyński - Institute of High Pressure Physics PAS) 29.03.2022
- Liquid phase epitaxy
and lateral overgrowth of semiconductors (Zbigniew R. Żytkiewicz -
Institute of Physics PAS) 05.04.2022
- Atomic layer
deposition (Elzbieta Guziewicz - Institute of Physics PAS) 12.04.2022
II. Characterization of crystals and epitaxial
structures
- X-ray diffraction
studies of crystals (Michał Leszczyński - Institute of High Pressure
Physics PAS) 19.04.2022
- Selected methods of
transmission electron microscopy (Sławomir Kret - Institute of Physics
PAS) 26.04.2022
- Surface studies of
crystals (Bogdan Kowalski - Institute of Physics PAS) 10.05.2022
- Electrical
characterization of semiconductors and semiconductor based structures (Ramon
Schifano - Institute of Physics PAS) 17.05.2022
- Optical properties
of crystals (Piotr Perlin - Institute of High Pressure Physics PAS)
24.05.2022
- Secondary ion mass
spectrometry (Paweł Michałowski – Łukasiewicz Institute of
Microelectronics and Photonics) 31.05.2022
- Electronic and
optical properties of graphene and other 2D materials (Andrzej
Wysmołek – Faculty of Physics University of Warsaw) due to the coincidence with the Jaszowiec
Conference, shifted to 14.06.2022.