Institute of High Pressure Physics

Twenty two Symposia will be held during the 2015 E-MRS Fall Meeting at the Warsaw School of Technology). One of them is Symposium H, titled ‘Nitride semiconductors for high power and high frequency electronic devices’. It will be organized between 15 and 17 September and will be combined with the Second Workshop of AGATE project.

Four invited papers will be presented by our Colleagues: Tomasz Sochacki (Current status of the HVPE-GaN growth), Paweł Prystawko (MOCVD-grown nitride HEMT structures on semi-insulating Ammonothermal bulk GaN substrates), Gosia Iwińska (HVPE-GaN growth on GaN-based Smart Cut™ substrates), and Piotr Kruszewski (Vertical Schottky diodes on high quality HVPE GaN). For more details and a detailed schedule of the Symposium please visit E-MRS Programme page.