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Important contribution to GaN phase diagram determination![]() Is it possible to melt GaN like other semiconductors: silicon or GaAs? What temperature and pressure is needed? Theoretical physicists from Institute of High Pressure Physics PAS made an important step towards solving this fundamental question. The results of their calculations were recently published in Chemistry of Materials (Impact factor 10.5) by J. Piechota, S. Krukowski, B. Sadovyi, P. Sadovyi, S. Porowski and I. Grzegory, in a publication entitled “Melting versus Decomposition of GaN: Ab Initio Molecular Dynamics Study and Comparison to Experimental Data” Chem. Mater. 2023, 35, 18, 7694–7707 doi: 10.1021/acs.chemmater.3c01477. Authors determined the conditions in which the N2 molecules are found, thus being a fingerprint of GaN decomposition, in contrast to higher pressures >15GPa at 4000K that indicate the possibility of GaN melting. Importantly the results of previous experimental work are now being confirmed by theoretical calculations which well justifies the use of the chosen method for modeling and designing difficult experiments to determine the melting curve of GaN. IHPP PAS Seminar on Nitride Semiconductors![]() Dear Ladies and Gentlemen, We are pleased to invite you to the IHPP PAS Seminar on Nitride Semiconductors. The next presentation will be held in a hybrid mode – at the New Technologies seminar room, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ). The next seminar is scheduled on Monday 09.10.2023 at 14:00. Speaker: Natalia Fiuczek (IHPP PAS, Laboratory of Nitride Semiconductor Physics) Title: Electrochemical etching of p-type GaN Abstract: link Sincerely, Tadeusz Suski Institute Thursday Seminar![]() Materials for energy harvesting are recently intensively studied due to the increasing need to substitute fossil fuels. They enable reusing of waste energy directly gained from the environment and convert it to electricity. One of the promising candidates for thermogenerators is Al-doped ZnO (AZO). Thermoelectric properties of this material can be tuned not only with Al doping level but also by its structure. More on this subject will be presented by Prof. Paolo Mele from College of Engineering, Shibaura Institute of Technology (Japan) at the coming UNIPRESS Seminar on Wednesday October 18, 2023 at 14:00. We invite you to his talk entitled „Nanoengineered Al-doped ZnO thin films for thermoelectric applications”. The seminar will be held in hybrid mode – in person at the Institute of High Pressure Physics PAS at Prymasa Tysiąclecia 98 (seminar room, second floor), and on-line through Zoom platform. Invited talk on E-MRS Fall Meeting![]() Dr hab. inż. Julita Smalc-Koziorowska from the Laboratory of Semiconductor Characterization will give an invited talk on E-MRS Fall Meeting next week. The talk is entitled „The role of metal vacancies in thermal degradation of InGaN” and is a part of Symposium U "Defect-induced effects in low-dimensional and novel materials" on September 18, 2023. The 2023 Fall Meeting of the European Materials Research Society (E-MRS) will take place from September 18 to 21, 2023 at the main campus of the University of Technology in Warsaw (Poland) and will consist of 24 parallel symposia with invited speakers, oral and poster presentations assorted by one plenary session to provide an international forum for discussing recent advances in the field of materials science. |
Unipress registered trademark![]() We are pleased to announce that the European Union Intellectual Property Office (EUIPO) has registered the "Unipress" trademark. The Institute's logo is protected in the European Union for 10 years from March 24, 2023 (from the date of filing). We are entitled – if needed – to use the ® symbol. Publiczna obrona rozprawy doktorskiej mgr. Ashfaqa Ahmada![]() Dnia 11 października 2023 r. (środa) o godz. 14:30 w sali seminaryjnej Instytutu Wysokich Ciśnień Polskiej Akademii Nauk w Warszawie, ul. Sokołowska 29/37, odbędzie się publiczna obrona rozprawy doktorskiej mgr. Ashfaqa Ahmada. Temat rozprawy: „Phenomena related to charge distribution in nitride heterostructures and their quantitative determination using density functional theory” Rozprawa doktorska i recenzje dostępne są na stronie BIP IWC PAN Jean-Louis Robert![]() With great sorrow, we announce the passing away of Jean-Louis Robert, retired professor of physics at the University of Montpellier and our longtime Friend, on September 7th. Professor Robert's professional career was closely associated with research on semiconductor materials, ranging from fundamental studies to practical applications. The close connection between research and applications was of particular importance to Professor Robert and led to the practical utilization of the results of the basic research in the industry. Holy Mass for the deceased prof. Robert will be celebrated on September 29, 2023 at 3:00 p.m. in the church of St. Wojciech in Wola Polish-Taiwanese seminar on semiconductors![]() National Center for Research and Development (NCBiR), Poland and the National Science and Technology Council (NSTC), Taiwan are organizing a scientific seminar under a scientific cooperation agreement. This is a 10th seminar in the series and it will be devoted to semiconductor technologies. Prof. Izabella Grzegory from the Institute of High Pressure Physics Polish Academy of Sciences has been invited to be the Polish coordinator of the 10th Polish-Taiwanese seminar. The substantive coordinators on the Taiwanese side are Dr. Mei-Yu Chang, Director of NARLabs International Affairs Office, and Dr. Chang-Hong Shen, Deputy Director of TSRI (Taiwan Semiconductor Research Institute). The seminar will be held on November 6, 2023 at the National Applied Research Laboratories (NARLabs) in Hsinchu, Taiwan. More details to follow soon. |
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