Institute of High Pressure Physics

Is it possible to melt GaN like other semiconductors: silicon or GaAs? What temperature and pressure is needed? Theoretical physicists from Institute of High Pressure Physics PAS made an important step towards solving this fundamental question. The results of their calculations were recently published in Chemistry of Materials (Impact factor 10.5) by J. Piechota, S. Krukowski, B. Sadovyi, P. Sadovyi, S. Porowski and I. Grzegory, in a publication entitled “Melting versus Decomposition of GaN: Ab Initio Molecular Dynamics Study and Comparison to Experimental Data” Chem. Mater. 2023, 35, 18, 7694–7707 doi: 10.1021/acs.chemmater.3c01477.

Authors determined the conditions in which the N₂ molecules are found, thus being a fingerprint of GaN decomposition, in contrast to higher pressures >15GPa at 4000K that indicate the possibility of GaN melting. Importantly the results of previous experimental work are now being confirmed by theoretical calculations which well justifies the use of the chosen method for modeling and designing difficult experiments to determine the melting curve of GaN.

Dear Ladies and Gentlemen,

We are pleased to invite you to the IHPP PAS Seminar on Nitride Semiconductors. The next presentation will be held in a hybrid mode – at the New Technologies seminar room, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).

The next seminar is scheduled on Monday 09.10.2023 at 14:00.

Speaker: Natalia Fiuczek (IHPP PAS, Laboratory of Nitride Semiconductor Physics)

Title: Electrochemical etching of p-type GaN

Abstract: link

Sincerely,

Tadeusz Suski
Piotr Perlin
Anna Kafar

Materials for energy harvesting are recently intensively studied due to the increasing need to substitute fossil fuels. They enable reusing of waste energy directly gained from the environment and convert it to electricity. One of the promising candidates for thermogenerators is Al-doped ZnO (AZO). Thermoelectric properties of this material can be tuned not only with Al doping level but also by its structure.

More on this subject will be presented by Prof. Paolo Mele from College of Engineering, Shibaura Institute of Technology (Japan) at the coming UNIPRESS Seminar on Wednesday October 18, 2023 at 14:00. We invite you to his talk entitled „Nanoengineered Al-doped ZnO thin films for thermoelectric applications”.

The seminar will be held in hybrid mode – in person at the Institute of High Pressure Physics PAS at Prymasa Tysiąclecia 98 (seminar room, second floor), and on-line through Zoom platform.

Dr hab. inż. Julita Smalc-Koziorowska from the Laboratory of Semiconductor Characterization will give an invited talk on E-MRS Fall Meeting next week. The talk is entitled „The role of metal vacancies in thermal degradation of InGaN” and is a part of Symposium U "Defect-induced effects in low-dimensional and novel materials" on September 18, 2023.

The 2023 Fall Meeting of the European Materials Research Society (E-MRS) will take place from September 18 to 21, 2023 at the main campus of the University of Technology in Warsaw (Poland) and will consist of 24 parallel symposia with invited speakers, oral and poster presentations assorted by one plenary session to provide an international forum for discussing recent advances in the field of materials science.