Instytut Wysokich Ciśnień

7th International Workshop on Crystal Growth Technology (IWCGT-7) will be held from 2nd to 6th July 2017 in Potsdam (near Berlin), Germany. Our Institute will be represented by Michal Fijalkowski and Michal Bockowski.

Two posters and one invited lecture will be demonstrated. The title of the lecture is Status, perspectives and trends on bulk growth of GaN. The posters are entitled: Highly resistive HVPE-GaN grown on native seeds with solid iron or methane as a source of dopants and Comparison of structural, optical, and electrical properties of highly conductive HVPE-GaN doped with Si or Ge and grown on native seeds, respectively.