

- Warsaw-4-PhD School
- Doctoral studies
IHPP awarded with a second grant by ONR Global

IHPP PAS was awarded by the Office of Naval Research Global with a second grant (N62909-21-1-2063). A three-year project titled ‘GaN substrates of the highest structural quality for high-power electronics’ started in September 2021.
This project is performed by the team working in the Crystal Growth Laboratory at IHPP PAS and is led by the head of the laboratory: Prof. Michal Bockowski. The work will be performed in close cooperation with our colleagues at Naval Research Laboratory in US.
The main objectives of this project is to develop the ammonothermal technology in order to obtain the highest structural quality 2-inch gallium nitride (GaN) substrates and to improve the crystallization from gas phase to deposit homo-epitaxial layers of the highest purity on the mentioned substrates.
The best technology for growing bulk GaN, in terms of structural quality, is ammonothermal. N-type Am-GaN substrates can be applied for building electronic Field Effect Transistors (FETs). This kind of devices require a GaN layer of the highest structural quality and purity. Gallium nitride of the highest purity can only be achieved by halide vapor phase epitaxy (HVPE). Therefore, a combination of the HVPE technology with Am-GaN substrates is the best path to achieve GaN-on-GaN structures of the highest crystallographic quality and the lowest donors and acceptors concentrations in the epitaxial layers.