Instytut Wysokich Ciśnień

Researchers at North Carolina State University,  Adroit Materials and the Institute of High-Pressure Physics of the Polish Academy of Sciences demonstrated a kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode with selective-area p-regions formed via magnesium (Mg) implantation followed by ultra-high-pressure annealing (UHPA). The JBS has an ideality factor of 1.03, a turn-on voltage of 0.75 V, and a specific differential ON-resistance of 0.6 mΩ·cm2. The breakdown voltage of the JBS diode is 915 V, corresponding to a maximum electric field of 3.3 MV/cm. These results underline that high-performance GaN JBS can be performed by Mg implantation and UHPA.

For more details see:

https://www.semiconductor-today.com/news_items/2022/sep/ncsu-adroit-070922.shtml

https://iopscience.iop.org/article/10.35848/1882-0786/ac8f81/meta