We will talk about InGaN relaxation in Cambridge
Friday, 31 March 2023 15:03 |
Transmission electron microscopy gives us a particular insight into material structure and defects.
At the upcoming Microscopy of Semi-Conducting Materials Conference on April 3-6, 2023 in Cambridge, dr hab. inż. Julita Smalc-Koziorowska will give an invited talk about "Peculiarities of the strain relaxation in InGaN layers". Dr inż. Joanna Moneta will give an oral presentation "Strain anisotropy of partially relaxed InGaN layers induced by misfit dislocations".
Detailed program of the conference is here.
