IHPP PAS Seminar on Nitride Semiconductors
| Seminars - NS |
Dear Ladies and Gentlemen,
We are pleased to invite you to the IHPP PAS Seminar on Nitride Semiconductors. The next presentation will be held in a hybrid mode – at the New Technologies seminar room, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).
The next seminar is scheduled on Monday 08.05.2023 at 14:00.
Speaker: prof. Michał Leszczyński (IHPP PAS, NL-12)
Title: Point defects in nitride semiconductors - do they really exist?
Presence of vacancies enables atoms to move. In the seminar, the following examples of experimental data will be given: i) diffusion of indium atoms in InGaN quantum wells that leads to well homogenization and decomposition, ii) diffusion of Al atoms smearing out the AlGaN/GaN interfaces, iii) diffusion of silicon and magnesium dopants. These data were obtained during annealing with and without gallium atoms in the gas above the samples, what had a significant influence on the diffusion.
Sincerely,
Tadeusz Suski
Piotr Perlin
Anna Kafar
