Institute of High Pressure Physics

of the Polish Academy of Sciences

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Our HVPE technology in Compound Semiconductor

Thursday, 05 June 2014 16:33 |

Our HVPE technology in Compound Semiconductor (page 48)

Hybrid approach yields the best GaN crystals and wafers. Marrying HVPE and ammonothermal growth techniques will accelerate the production of ultra-high quality GaN

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