Institute of High Pressure Physics

Prof Czesław Skierbiszewski was invited to give a plenary talk InGaN laser diodes grown by plasma assisted MBE at the 10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014), organized at National Sun Yat-sen University, Kaohsiung, Taiwan from 14th to 19th of Dec. 2014.

ISSLED is a biannually international meeting for scientists and engineers worldwide, both in academia and in industry, to meet together to share and exchange the latest discoveries and progress on various grounds of light emitting semiconductors, inorganic and organic. It started in 1996/1998 in Chiba/ Japan and went through Berlin/ Germany, Cordoba/ Spain, Gyeongju/ Korea, Montpellier/ France, Phoenix/ Arizona, Beijing/ China, and Berlin/ Germany in 2012.

More details at http://issled2014.phys.nsysu.edu.tw/