Institute of High Pressure Physics

Zapraszamy do udziału w seminarium Fizyki Materii Skondensowanej, organizowanym przez prof. Aleksandra Wittlina z Instytutu Fizyki PAN.

Wykład "III-nitride tunnel junctions and its application in bidirectional light-emitting diodes" wygłosi Mikołaj Żak z naszego Instytutu, z laboratorium Epitaksji MBE.

Seminarium odbędzie się w formie zdalnej we wtorek 23 stycznia 2024, godz. 14:00 przez platformę Zoom. Link można uzyskać bezpośrednio od organizatorów lub pisząc na adres dyrekcja@unipress.waw.pl.

The properties of high T_c superconductors can be significantly improved by the chemical pressure effect and high-pressure synthesis process. Dr. Singh's research group (NL-6) has published three very interesting IEEE articles that summarize the impact of chemical pressure on iron-based superconductors (FBS) using both ambient and high-pressure growth methods.

In the first paper, researchers show that the superconducting properties of the stoichiometric CaKFe₄As₄ (1144) are improved by high-gas pressure and high-temperature synthesis (HP-HTS) process. The transition temperature is increased up to 35.2 K with a transition width of 1 K, which is comparable to 1144 single crystals. Additionally, the critical current density (J_c) is enhanced by almost one order of magnitude compared with 1144 prepared by the conventional synthesis process at ambient pressure (CSP). This study is published by Manasa Manasa, Mohammad Azam, Tatiana Zajarniuk, Ryszard Diduszko, Tomasz Cetner, Andrzej Morawski, Andrzej Wiśniewski, Shiv J. Singh entitled “Enhancement of Superconducting Properties of Polycrystalline CaKFe₄As₄ by High-Pressure Growth” (IEEE Transactions on Applied Superconductivity (2023)) DOI: 10.1109/TASC.2023.3345821

Figure 1: The variation of (a) the onset transition (T_c^onset) (b) transition width (ΔT) (c) the residual resistivity ratio (RRR = ρ_{300 K} /ρ_{40 K} and (d) the critical current density (J_c) at 0 T and 5 T at 5 K for the samples prepared at different pressures for CaKFe₄As₄ bulks. The data are also included from the previous reports for 1144 bulks.

Stanford University has updated a list of the most cited scientists from around the world.

Nine researchers from our Institute are on the World’s Top 2% Scientists 2023:

• Prof. Sylwester Porowski
• Prof. Izabella Grzegory
• Prof. Marek Potemski
• Prof. Witold Łojkowski
• Prof. Tadeusz Suski
• Dr inż. Jan Weyher, prof. IWC PAN
• Prof. Michał Bockowski
• Prof. Wojciech Knap
• Prof. Czesław Skierbiszewski

Stanford University uses a state-of-the-art algorithm that normalizes these ranks within scientific fields, ensuring fair comparison and showing also data without self-citation impact. Ranking consists of two lists. The first contains an analysis of data collected since 1960 and looks at the entire scientific output (including both those who are professionally active and those who have ended their careers), while the second takes into account publications from the past calendar year (impact of publications measured by citations).

A list of all the researchers in the World’s Top 2% Scientists ranking is available on the Elsevier’s website>>.

Intererstingly, there are five PhD students of Prof. Sylwester Porowski are among the World Top 2% Scientists:

• Prof. Izabella Grzegory (Unipress)
• Prof. Janusz Karpiński (ETH Zurich)
• Prof. Marcin Kończykowski (Laboratoire des Solides Irradiés Ecole Polytechnique)
• Prof. Zbig Wasilewski (Univ. Waterloo)
• Prof. Michał Boćkowski (Unipress)

We are happy to share that dr inż. Tomasz Sochacki and dr inż. Marta Sawicka are the laureates of a LIDER Program funded by National Center for Research and Development (NCBiR).

• The project "Innovative technology for fabricating semi-insulating gallium nitride (GaN) substrates - on the way to p-type substrates" leaded by Tomasz Sochacki will be carried out in the Laboratory of Crystal Growth (NL3). It was on the podium of the ranking list of 41 projects qualified for funding!
• The project "Towards yellow laser diodes with tunable InGaN pseudo-substrate relaxation enabled by nanoporous GaN” leaded by Marta Sawicka will ba carried out in the Laboratory of MBE (NL14).

Congratulations!

The final ranking list of projects qualified for funding in the 14th competition of the LIDER Program is available on the website of the National Center for Research and Development.