We are pleased to invite you to the next IHPP PAS Seminar on Nitride Semiconductors. The talk will be held in a remote mode – through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).
The talk is scheduled onFriday19.09.2025 at 10:30 CEST.
Speaker: Dr. Costanza Lucia Manganelli (IHP - Leibniz-Institut für Innovative Microelectronik, Frankfurt (Oder), Germany)
Title: Strain engineering in CMOS micro-electronics. How to tailor.
We are pleased to invite you to the next IHPP PAS Seminar on Nitride Semiconductors. The talk will be held in a hybrid mode – at the seminar room in New Technologies building, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).
The talk is scheduled onThursday04.09.2025 at 15:00 CEST.
Speaker: Dr. Tobias Schulz (Leibniz-Institut für Kristallzüchtung, Berlin, Germany)
Title: Cathodoluminescence in a scanning electron microscope operated in transmission mode
We are pleased to invite you to the next IHPP PAS Seminar on Nitride Semiconductors. The talk will be held in a hybrid mode – at the seminar room in New Technologies building, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).
The talk is scheduled on Friday13.06.2025 at 15:00 CEST.
Speaker: Prof. Huili Grace Xing (Cornell University, Ithaca, USA)
Title: 2D Hole Gas at GaN/AlN interface – an Unprecedented Platform to Probe the Valence Band of GaN
We are pleased to invite you to a joint seminar at IHPP PAS between Doctoral Seminars and Seminar on Nitride Semiconductors. The presentation will be held in a hybrid mode – at the seminar room in New Technologies building, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).
The talk is scheduled on Tuesday27.05.2025 at 15:00 CEST.
Speaker: Ewa Grzanka(Institute of High Pressure Physics PAS, Warsaw, Poland)
Title: Influence of growth and annealing conditions on microstructural and optical properties of InGaN quantum wells used in optoelectronic devices