Institute of High Pressure Physics

We are pleased to inform you that the Center for Nitride Semiconductor Physics and Technology "GaN-Unipress" has received support under Investment A2.4.1 Investments in Expanding the Research Potential of the National Recovery and Resilience Plan. The Center, founded by Prof. Dr. Hab. Izabella Grzegory, Corresponding Member of the Polish Academy of Sciences and listed among the strategic research infrastructures on the Polish Research Infrastructure Map (decision number DIR/PMIB/2020/99), received support amounting to PLN 75,759,580.00 with a total eligible project cost of PLN 89,144,580.00.

More about the Center for Nitride Semiconductor Physics and Technology "GaN-Unipress" in this file.

The infrastructure for the production of quantum structures for high-power and high-frequency electronic devices based on nitride semiconductors and gallium nitride (GaN) substrates with a diameter of 4 inches will be built within the project. The Institute of High Pressure Physics of the Polish Academy of Sciences is currently the only European manufacturer of GaN substrates.

Fundacja na rzecz Nauki Polskiej ogłosiła listę laureatów i laureatek 32. konkursu w programie START. Prestiżowe stypendia otrzyma 100 wybitnych młodych naukowców, w tym mgr inż. Mikołaj Żak z naszego Instytutu w dziedzinie elektronika. Gratulujemy!

Program START jest najstarszym w Polsce programem stypendialnym dla najlepszych młodych naukowców reprezentujących wszystkie dziedziny nauki. Jego celem jest wspieranie wybitnych młodych uczonych i zachęcanie ich do dalszego rozwoju naukowego. Laureaci i laureatki programu START w edycji 2024 otrzymają roczne stypendium w wysokości 30 tys. zł. Mogą je przeznaczyć na dowolny cel.

Więcej o programie START i tegorocznej jego edycji na stronie FNP.

This year Anna KAFAR from our Instutute together with Takuya MAEDA, Matteo MENEGHINI, and Eva MONROY organize Symposium I “III-nitrides and their use in electronics and optoelectronics” within the E-MRS 2024 Fall Meeting & Exhibit. Conference is organized at the University of Technology in Warsaw, Poland from 16^th to 19^th September 2024.

The symposium is a platform for exchanging research results and discussions related to III-nitride semiconductor growth, characterization and device fabrication. This includes traditional materials: GaN, InGaN, AlGaN, as well as so-called new nitrides: NbN, ScAlN. All the information is here.

Submission Deadline: June 6 (Thursday), 2024

Notification about decision: July 15 (Thursday), 2024

More info and submission: https://www.european-mrs.com/iii-nitrides-and-their-use-electronics-and-optoelectronics-emrs

Research carried out at our Institute in the NL10 laboratory has shown interesting properties of nanocollides based on a liquid crystal (MBBA) with the addition of BaTiO₃ nanoparticles. Previous work by this group has already shown that adding a minimal amount of nanoparticles fundamentally changes the properties of the system. This time, the properties were examined in the direction perpendicular to the long axis of the molecules.

The studied nanocolloids showed that in the isotropic phase a pre-transition effect of the dielectric constant is observed, which can be related to the so-called negative specific heat. In the nematic phase, which undergoes supercooling, a very strong signature of passing the melting point appears despite the lack of crystallization. The very strong pre-melting effect in the solid phase is explained on the basis of a concept combining the Lipovsky model for nanolayers of liquids between two surfaces, and the hypothesis of the appearance of negative pressures in these layers - leading to the Mossotti Catastrophe behavior. This work also shows for the first time a simple parameterization of changes in electrical permittivity in the low-frequency region (which was a previously unsolved problem) and a previously unknown critical anomaly of the dissipation coefficient, i.e. D = tgδ related to energy dissipation.

Th work is published in Open Access paper: A. Drozd-Rzoska, J. Łoś, S.J. Rzoska, The dominance of pretransitional effects in the liquid crystal based nanocolloids: nematogenic MBBA with the transverse permanent dipole moment and BaTiO₃ nanoparticles, Nanomaterials 2024, 14, 655 (Impact Factor: 5.3).

Fig. Temperature evolutions for tgδ loss (energy dissipation) factor for frequency f=12Hz in MBBA and related nanocolloids with BaTiO₃ nanoparticles. The solid green and blue curves are for the critical-like empirical parametrization D(T)=tgδ=δ^*+d(T-T_δ)+D(T-T_δ)^Ѱ with exponent Ѱ≈4. Note the link of this magnitude to the power loss: P=ωCV²tgδ.