Mike Leszczyński
- "Main issues in technology of AlGaInN-based laser diodes and in arrays", Nagoya Seminar on Nitride Semiconductors, August, 2016
Ewa Grzanka
- "Changes of Indium Distribution within the InGaN MQWs in LED and LD Structures just before their decomposition", IWN 2016 Orlando/USA, 2016
Joanna Moneta
- "Strain relaxation via (a+c)-type misfit dislocation formation in InGaN epilayers grown on (0001) GaN by plasma-assisted molecular beam epitaxy", International Workshop of Nitride Semiconductors, Orlando 2016
- "Large Angle Convergent Beam Electron Diffraction analysis of (a+c)-type misfit dislocations in InGaN epilayers grown on (0001) GaN by plasma-assisted molecular beam epitaxy", Microscopy of Semiconducting Materials, Oxford 2017
Pawel Prystawko
- "MOCVD epitaxy on bulk GaN substrates for HEMT RF application", IEEE EDS DL MQ: GaN HEMT Technology, Modeling, Applications, Lodz, June 22, 2016.