The Optoelectronic Devices Laboratory focuses on semiconductor-based optoelectronic devices, particularly laser diodes, semiconductor optical amplifiers, and superluminescent diodes.
Our group has developed many practical solutions and contributed significantly to a deeper understanding of device physics. Among the most important achievements, we would like to highlight:
- InGaN laser diodes with graded-index separate confinement heterostructure (GRINSCH) design
- Superluminescent diodes with ultra-broad emission spectra
- Semiconductor optical amplifiers with gain exceeding 20 dB
- Polarization-doped InGaN laser diodes operating at cryogenic temperatures
- Quantum InGaN structures grown on patterned substrates
We are active and creative across all three pillars of device development: epitaxy (primarily MOVPE), device processing, and packaging.
The team collaborates with industrial partners such as TopGaN and governmental institutes like Łukasiewicz–IMiF. The laboratory is involved in European projects such as Agilight, focused on quantum technologies, and participates in various other European research initiatives, including ChipJu.