Institute of High Pressure Physics

Dear Ladies and Gentlemen,

We are pleased to invite you to the IHPP PAS Seminar on Nitride Semiconductors. The next presentation will be held in a hybrid mode – at the New Technologies seminar room, Al. Prymasa Tysiąclecia 98, and through Zoom platform (to get the link, please contact us at nitride_seminar@mail.unipress.waw.pl ).

The next seminar is scheduled on Monday 29.05.2023 at 13:00.

Speaker: dr inż. Joanna Moneta (IHPP PAS, NL-12)

Title: Peculiarities of the strain relaxation in InGaN layers

Abstract:

The idea of using relaxed InGaN layers as pseudo-substrates for the growth of InGaN-based devices has emerged in the last years. While most of approaches of gaining relaxed InGaN are based on the elastically relaxed layers obtained by preparation of compliant layer (e.g., porous GaN) and subsequent patterning, in our attempt we focus on InGaN layers relaxed plastically by the introduction of misfit dislocations. An understanding of the dislocation formation process which allows prediction and control of the properties of relaxed InGaN layers is essential for achieving good quality InGaN/GaN templates.
InGaN layers with indium content close to 20% deposited on various types of (0001)-GaN substrates were studied. The growth was carried out by either Molecular Beam Epitaxy (MBE) or Metalorganic Vapor Phase Epitaxy (MOVPE). Structural analysis was done by means of transmission electron microscopy, cathodoluminescence imaging, traditional X-ray diffractometry and full-field X-ray diffraction microscopy.
The seminar will discuss the mechanisms of misfit dislocations nucleation and glide and the influence of GaN-substrate misorientation on the strain relaxation process. The impact on the structural properties of InGaN/GaN templates will be addressed.

Sincerely,

Tadeusz Suski
Piotr Perlin
Anna Kafar

National Science Centre announced the results of OPUS 24 and SONATA 18 scientific competitions. Congratulations to all the laureates, especially to prof. Michał Leszczyński from our Institute who will be the leader of OPUS grant „Mechanisms of Al, Ga, In diffusion in three-dimensional quantum structures of (AlGaIn)N. More information at the NCN webpage.

Popularscience abstract of the project under this link.

Institute of High Pressure Physics Polish Academy of Sciences joined the Polish Technological Platform on Photonics (PPTF), an organization that gathers various entities operating in Poland in the field of photonics: companies, scientific units, government and local authorities and non-governmental organizations.

IWC PAN is a leader in the field of gallium nitride (GaN) crystallization and production of high-quality GaN substrates for semiconductor lasers and power electronics. For years, we have been developing epitaxial technologies and physics of devices based on GaN. Our laboratories for crystallization as well as studies of the microstructure, optical and electrical properties are an important node on the Map of Polish Research Infrastructure. We also educate and train young people in the field of photonic technologies.

The PPTF mission is to increase the innovativeness of the Polish photonic industry. As a member of PPTF, the Institute of High Pressure Physics PAS we will cooperate for the development of photonics and microelectronics by the development of new technologies and opto-electronic products, improvement of staff qualifications and the extension of the range of applications of photonic technologies in Poland.

New lecture on crystal growth theory and application of machine learning for advanced modeling of crystal growth processes of semiconductor bulk crystals and epitaxial layers will be given within the scope of the physics courses in spring semester of Warsaw4PhD School.

The 8-lecture course will be given on-line by dr Akira KUSABA from Kyushu University. The first lecture will be given on April 18th 2023 at 10.00 am.

Visit the Warsaw4PhD webpage to find out more about the scope of the new course and get the Zoom meeting link.