TeamTech

TeamTech logotyp

Project TeamTech

A universal process for overcoming the equilibrium crystal shape in crystal growth from the vapor phase

Project is carried out from 1st October 2018 to 31st March 2022

Programme Description

Project is carried out within the TeamTech programme of the Foundation for Polish Science. Programme TEAM-TECH is co-funded in the framework of Program Operacyjny Inteligentny Rozwój (PO IR) oraz Foundation for Polish Science. Programme TEAM-TECH offers grants for research teams headed by leading scientists carrying out R&D projects related to a new product or production process (technological or manufacturing) of significant importance for the economy.

Project Goal

The goal of this project is to develop a universal process for overcoming the equilibrium crystal shape in gallium nitride (GaN) crystal growth from the vapor phase. Currently, the diameter of crystallized GaN decreases in time. Results of the project should allow deposition of thick single crystalline GaN boules with a uniform or expanding diameter. Crystallization process will be carried out on c-plane of native GaN seed. For this purpose, precise control of supersaturation on the crystal’s growing surface is necessary. The supersaturation should be reduced on the edges and sidewalls of the growing crystal. This way adsorption of the growth species on the sidewalls will be minimized, while the growth facet (c-facet) will be stabilized and grown out for an arbitrary time period. Such conditions will be achieved by controlling the thermal field around the growing crystal. The equilibrium crystal shape can be overpowered by a proper thermal field design and that the crystal will follow the thermal field and grow in a direction perpendicular to the isotherms.

International Collaboration

Project is carried out in collaboration with:

Department of Materials Science and Engineering, Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC, USA

Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University, (Amano Laboratory), Japan

Publications

Project results have been published in:

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Lectures

Project results have been presented by:

M. Bockowski, Combination of advantages of HVPE and ammonothermal methods as a solution for crystallization of GaN, IWN2018, 11-16 November, Kanazawa, Japan –invited lecture

T. Sochacki Crystallization of GaN by HVPE method with controlled lateral growth, IWN2018, 11-16 November, Kanazawa, Japan - contributed

M. Iwińska, Highly resistive HVPE-GaN grown on native seeds - investigation and comparison of different dopants, , IWN2018, 11-16 November, Kanazawa, Japan - contributed

B. Lucznik, Gradient of silicon concentration in HVPE-GaN, IWN2018, 11-16 November, Kanazawa, Japan - contributed

M. Amilusik, Homoepitaxial Growth by Hydride Vapor Phase Epitaxy of Semi-Polar GaN on Ammonothermal Seeds, IWN2018, 11-16 November, Kanazawa, Japan - contributed

M. Amilusik, Growth of GaN:Mg by Hydride Vapor Phase Epitaxy, IWN2018, 11-16 November, Kanazawa, Japan –contributed

M. Amilusik, Micro-Raman Studies of Strain in Bulk GaN Crystals Grown by Hydride Vapor Phase Epitaxy on Ammonothermal GaN Seeds, IWN2018, 11-16 November, Kanazawa, Japan –poster

M. Iwińska, Influence of different dopants on the properties of bulk GaN, 4th IDGNS, 18-20 November, Sendai, Japan –invited lecture

M. Iwinska, Semi-insulating HVPE-GaN grown on native seeds, SPIE, Photonics West 2019, 3-7 February, San Francisco, USA - contributed

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