Anna Feduniewicz-Żmuda graduated from the Faculty of Mathematics and Natural Sciences, University of Rzeszów. Since 2002 he has been working with prof. Czesław Skierbiszewski as a scientific and technical worker. She completed an internship abroad in the processing laboratory at the Technical University of Vienna. He co-authored 32 scientific publications.
The most important achievements of Anna Feduniewicz-Żmuda include the development of optimum procedures for GaN substrates preparation for epitaxy with respect to specific crystallographic orientation.
Anna Feduniewicz-Żmuda is interested in optimization of GaN substrate preparation for epitaxy. She develops procedures suitable for the specific GaN substrate orientation. She is responsible for GaN substrate quality check as well as nitride layers and structures surface characterization by atomic force microscopy (AFM). She performs optical and electrical characterization of quantum structures and optoelectronic devices such as LEDs and LDs.
tel. +48 22 876 0352
lab. +48 22 876 0324