Mikołaj Chlipała, PhD, Eng.

Mikołaj Chlipała, PhD, Eng., is a specialist in III-nitride semiconductor research and development with expertise spanning epitaxial growth, device fabrication, and advanced characterization. He has years of experience working on cutting-edge optoelectronic and electronic devices in collaboration with leading institutions.

At Unipress, Mikołaj works at the development of plasma-assisted MBE processes for III-nitride semiconductor and transistion metal nitreds. His research has resulted in several breakthroughs, including the optymialization of novel p-down LEDs with bottom tunnel junctions, dual-sided wafer utilization for LEDs and HEMTs, and study of optical properties os superconductor for next-generation optoelectronics and quantum photonics. He has authored numerous peer-reviewed publications, secured competitive research grants, and received the prestigious START Scholarship from the Foundation for Polish Science, awarded to the most promising young researchers in Poland.

Mikołaj Chlipała has obtained his PhD in physics from the Institute of High Pressure Physics of the Polish Academy of Sciences (PhD thesis). He previously completed his Master’s studies in Photonic Nanostructures at Faculty of Applied Physics and Mathematics at Gdańsk University of Technology. He is currently working as a Postdoctoral Researcher at Chalmers University of Technology in Gothenburg, Sweden, focusing on the development of III-Nitride laser technology.

ORCID:0000-0001-9922-0174
Scopus Author ID: 57207659697
Google Scholar

Areas of Expertise

• Epitaxial growth of III-nitride semiconductors (GaN, AlN, InN, AlScN, NbN) using plasma-assisted MBE
• Design, simulation, and fabrication of optoelectronic devices (LEDs, tunnel junctions, bipolar transistors)
• Device characterization (electrical, optical, and structural)
• Cryogenic and quantum photonics device applications
• Process optimization and thin-film characterization (AFM, SEM, SIMS, RHEED, reflectometry)
• Project leadership and grant acquisition in semiconductor R&D

Projects

• Preludium 18 - Monolithic bipolar junction transistor driving LED in group III nitrides material system
• European Network for Innovative and Advanced Epitaxy (OPERA) European Cooperation in Science and Technology (COST) Short-Term Scientific Missions "The influence of metal surfactants on Ge incorporation in AlGaN – the path to UV emitters", Sep. 2023 (1 month) at Commissariat à l’énergie atomique et aux énergies alternatives – Grenoble, France
• 2023 Taiwan Semiconductor Summer Programs, 6 Aug 2023 – 26 Aug 2023 (3 weeks) at National Yang Ming Chiao Tung University and Taiwan Semiconductor Research Institute (TSRI), Hsinchu, Taiwan
• 1-Month Research Visits programme of the NAWA/STER iWARSAW4PhD project Growth of NbN superconducting layers on LED structures, Sep. 2022 (1 month) at Cornell University, Ithaca, NY, United States

Publication list

2025

• Lachowski, A., Wolny, P., Dybko, K., Chlipała, M., Nowakowski-Szkudlarek, K., Hajdel, M., Żak, M., Feduniewicz, A., Sawicka, M., Chromiński, W., Grzanka, E., & Skierbiszewski, C. (2025). NbN-based Josephson junctions grown by plasma-assisted molecular beam epitaxy. Communications Materials, 6(1). Springer Nature. https://doi.org/10.1038/s43246-025-00891-3
• Chlipała, M., Akritidis, K., Levchenko, I., Gibasiewicz, K., Brstilo, T., Billet, M., Van Dorpe, P., Fiuczek, N., Sawicka, M., Kuyken, B., & Turski, H. (2025). Electrochemical Etching for Seamless Micro-Transfer Printing of InGaN LEDs. ACS Applied Electronic Materials, 7(11), 4814–4821. American Chemical Society. https://doi.org/10.1021/acsaelm.5c00259
• Bercha, A., Chlipała, M., Hajdel, M., Muzioł, G., Siekacz, M., Turski, H., & Trzeciakowski, W. (2025). Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities. Nanomaterials, 15(2), 112. MDPI. https://doi.org/10.3390/nano15020112

2024

• van Deurzen, L., Kim, E., Pieczulewski, N., Zhang, Z., Feduniewicz-Zmuda, A., Chlipała, M., Siekacz, M., Muller, D., Xing, H. G., Jena, D., & Turski, H. (2024). Using both faces of polar semiconductor wafers for functional devices. Nature, 634(8033), 334–340. Springer Nature. https://doi.org/10.1038/s41586-024-07983-z
• Zdanowicz, E., Przypis, Ł., Żuraw, W., Grodzicki, M., Chlipała, M., Skierbiszewski, C., Herman, A. P., & Kudrawiec, R. (2024). Revealing the TMA₂SnI₄/GaN band alignment and carrier transfer across the interface. Journal of Materials Chemistry C, 12(45), 18356–18362. RSC. https://doi.org/10.1039/d4tc03203a
• Chlipała, M., & Turski, H. (2024). Harnessing III-Nitride Built-In Field in Multi-Quantum Well LEDs. ACS Applied Materials & Interfaces. American Chemical Society. https://doi.org/10.1021/acsami.4c02084

2023

• Turski, H., Chlipała, M., Zdanowicz, E., Rogowicz, E., Muziol, G., Moneta, J., Grzanka, S., Kryśko, M., Syperek, M., Kudrawiec, R., & Skierbiszewski, C. (2023). Competition between built-in polarization and p–n junction field in III-nitride heterostructures. Journal of Applied Physics, 134(24). AIP Publishing. https://doi.org/10.1063/5.0177614
• Żak, M., Muziol, G., Siekacz, M., Bercha, A., Hajdel, M., Nowakowski-Szkudlarek, K., Lachowski, A., Chlipała, M., Wolny, P., Turski, H., & Skierbiszewski, C. (2023). Bidirectional light-emitting diode as a visible light source driven by alternating current. Nature Communications, 14(1). Springer Nature. https://doi.org/10.1038/s41467-023-43335-7
• Bercha, A., Muziol, G., Chlipała, M., & Trzeciakowski, W. (2023). Long-Lived Excitations in Wide (In,Ga)N/GaN Quantum Wells. Physical Review Applied, 20(3). APS. https://doi.org/10.1103/PhysRevApplied.20.034040

2022

• Turski, H., Wolny, P., Chlipała, M., Sawicka, M., Reszka, A., Kempisty, P., Konczewicz, L., Muziol, G., Siekacz, M., & Skierbiszewski, C. (2022). Role of Metallic Adlayer in Limiting Ge Incorporation into GaN. Materials, 15(17), 5929. MDPI. https://doi.org/10.3390/ma15175929
• Konczewicz, L., Litwin-Staszewska, E., Zajac, M., Turski, H., Bockowski, M., Schiavon, D., Chlipała, M., Iwinska, M., Nita, P., Juillaguet, S., & Contreras, S. (2022). Electrical transport properties of highly doped N-type GaN materials. Semiconductor Science and Technology, 37(5), 055012. IOP Publishing. https://doi.org/10.1088/1361-6641/ac5e01
• Chlipała, M., Turski, H., Żak, M., Muziol, G., Siekacz, M., Nowakowski-Szkudlarek, K., Fiuczek, N., Feduniewicz-Żmuda, A., Smalc-Koziorowska, J., & Skierbiszewski, C. (2022). Bottom tunnel junction-based blue LED with a thin Ge-doped current spreading layer. Applied Physics Letters, 120(17), 171104. AIP Publishing. https://doi.org/10.1063/5.0082297

2021

• Hajdel, M., Chlipała, M., Siekacz, M., Turski, H., Wolny, P., Nowakowski-Szkudlarek, K., Feduniewicz-Żmuda, A., Skierbiszewski, C., & Muziol, G. (2021). Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs. Materials, 15(1), 237. MDPI. https://doi.org/10.3390/ma15010237
• Żak, M., Muziol, G., Turski, H., Siekacz, M., Nowakowski-Szkudlarek, K., Feduniewicz-Żmuda, A., Chlipała, M., Lachowski, A., & Skierbiszewski, C. (2021). Tunnel Junctions with a Doped (In,Ga)N Quantum Well for Vertical Integration of III-Nitride Optoelectronic Devices. Physical Review Applied, 15(2). APS. https://doi.org/10.1103/PhysRevApplied.15.024046
• Schiavon, D., Chlipała, M., & Perlin, P. (2021). Lateral carrier injection for the uniform pumping of several quantum wells in InGaN/GaN LEDs. Optics Express, 29(3), 3001. Optica. https://doi.org/10.1364/OE.411449
• Pieniak, K., Chlipała, M., Turski, H., Trzeciakowski, W., Muziol, G., Staszczak, G., Kafar, A., Makarowa, I., Grzanka, E., Grzanka, S., Skierbiszewski, C., & Suski, T. (2021). Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN LEDs with a tunnel junction. Optics Express, 29(2), 1824. Optica. https://doi.org/10.1364/OE.415258

2020

• Siekacz, M., Muziol, G., Turski, H., Hajdel, M., Żak, M., Chlipała, M., Sawicka, M., Nowakowski-Szkudlarek, K., Feduniewicz-Żmuda, A., Smalc-Koziorowska, J., Stańczyk, S., & Skierbiszewski, C. (2020). Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions. Electronics, 9(9), 1481. MDPI. https://doi.org/10.3390/electronics9091481
• Hołówko, B., Błaszczak, P., Chlipała, M., Gazda, M., Wang, S.-F., Jasiński, P., & Bochentyn, B. (2020). Structural and catalytic properties of ceria layers doped with transition metals for SOFCs fueled by biogas. International Journal of Hydrogen Energy, 45(23), 12982–12996. Elsevier. https://doi.org/10.1016/j.ijhydene.2020.02.144

2019

• Turski, H., Siekacz, M., Muzioł, G., Hajdel, M., Stańczyk, S., Żak, M., Chlipała, M., Skierbiszewski, C., Bharadwaj, S., Xing, H. G., & Jena, D. (2019). Nitride LEDs and Lasers with Buried Tunnel Junctions. ECS Journal of Solid State Science and Technology, 9(1), 015018. ECS. https://doi.org/10.1149/2.0412001jss
• Bochentyn, B., Chlipała, M., Gazda, M., Wang, S.-F., & Jasiński, P. (2019). Copper and cobalt co-doped ceria as an anode catalyst for DIR-SOFCs fueled by biogas. Solid State Ionics, 330, 47–53. Elsevier.
• Chlipała, M., Błaszczak, P., Wang, S.-F, Jasiński, P., & Bochentyn, B. (2019). In situ study of a composition of outlet gases from biogas fuelled SOFC performed by FTIR spectroscopy. International Journal of Hydrogen Energy, 44(26), 13864–13874. Elsevier.

Patenty

1. INCREASING DENSITY OF SEMICONDUCTOR DEVICES ON A SUBSTRATE Inventors: Len Van Deurzen, Eungkyun Kim, Zexuan Zhang, Huili Grace Xing, Debdeep Jena, Henryk Turski, Anna Feduniewicz-Zmuda, Mikolaj Chlipala, Marcin Siekacz
Applicants: Cornell University; Institute of High Pressure Physics, Polish Academy of Sciences
Publication number: WO2025106550A1 (PDF)
Publication date: 2025-05-22 Earliest priority: 2023-11-14

2. HYBRID LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME Inventors: Czeslaw Skierbiszewski, Julia Slawinska, Mikolaj Chlipala, Marcin Siekacz, Kacper Oreszczuk, Aleksander Rodek, Piotr Kossacki
Applicants: Institute of High Pressure Physics, Polish Academy of Sciences; University of Warsaw
Publication numbers: EP4239694A1 (PDF), EP4239694B1 (PDF), EP4239694C0 (PDF)
Publication date: 2023-09-06 (updated 2024-09-25) Earliest priority: 2022-02-26

3. WAVELENGTH TUNABLE LIGHT EMITTING DIODE AND METHOD OF MAKING THE SAME Inventors: Żak. Mikołaj, Henryk Turski, Krzesimir Nowakowski-Szkudlarek, Grzegorz Muziol, Mateusz Hajdel, Pawel Wolny, Czeslaw Skierbiszewski, Mikolaj Zak, Mikolaj Chlipala
Applicants: Institute of High Pressure Physics, Polish Academy of Sciences
Publication numbers:EP4228012A1 (PDF), EP4228012B1 (PDF), EP4228012C0 (PDF)
Publication date: 2023-08-16 (updated 2024-09-25) Earliest priority: 2022-02-12

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