MBE Laboratory

Institute of High Pressure Physics PAS

About us

MBE research group is a part of the Institute of High Pressure Physics Polish Academy of Sciences (IHPP PAS) "Unipress".

We focus on the development of blue and green light-emitting diodes (LEDs) and laser diodes (LDs) using plasma-assisted molecular beam epitaxy (PAMBE). We carry out the research on long-wavelength light emitters: implement improvements in structure design and optimize optical and electrical parameters of gallium nitride (GaN) based devices. We investigate crystal growth mechanisms on GaN surfaces of various polarity and crystallographic orientation. We fabricate and study nitride heterostructures with tunnel junction. We also study vertical heterojunction transistors n-p-n (GaN/InGaN/GaN) fabricated on GaN substrates using MBE.


Our PhD students with honourable mention

We are proud to announce that Mikołaj Żak MSc and Mateusz Hajdel MSc received the distinction in the XXVII edition of the Adam Smoliński Competition for the best thesis in field of optoelectronics. The competition was organized by Polish Committee of Optoelectronics SEP. Both master's theses were realized in collaboration of the Gdańsk University of Technology and the MBE laboratory of the Institute of High Pressure Physics PAS. CONGRATULATIONS!

PhD student Mateusz Hajdel is a laureate of "100 na 100" scholarship program

30.11.2018 We are glad to inform that Mateusz Hajdel, MSc is a laureate of Halina Konopacka and Ignacy Matuszewski "100 na 100" scholarship program founded by Lotto Foundation. The scholarship is granted to 100 best polish student to allow them further self-development and gaining knowledge also outside of their own discipline. More information about the program on page: www.fundacjalotto.pl/100stypendiow

New project - PhD scholarship offer

PhD students are invited to apply for a scholarship position in HOMING project of the Foundation for Polish Science "Polarity engineering in Nitride heterostructures", leaded by dr Henryk Turski. Application deadline 29.10.2018 at 12:00. More details can be found here: 1_oferta-pracy_FNP_IWC_Homing.pdf

Congratulations on the scholarship of Ministry of Science and Higher Education

We are proud to announce that dr inż. Grzegorz Muzioł and dr Henryk Turski will receive the scholarships of Ministry of Science and Higher Education. They are among 181 young scientists with esceptional scientific recors who carry out high quality research.

Lately we published:
  1. Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE By: H. Turski, A. Feduniewicz-Żmuda, M. Sawicka, A. Reszka, B. Kowalski, M. Krysko, P. Wolny, J. Smalc-Koziorowska, M. Siekacz, G. Muzioł, K. Nowakowski-Szkudlarek, S. Grzanka, C. Skierbiszewski, Journal of Crystal Growth 512, 208-212 Published: APR 2019
  2. Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy By: G. Muzioł, M. Siekacz, K. Nowakowski-Szkudlarek, M. Hajdel, J. Smalc-Koziorowska, A. Feduniewicz-Żmuda, E. Grzanka, P. Wolny, H. Turski, P. Wiśniewski, P. Perlin, C. Skierbiszewski, Materials Science in Semiconductor Processing 91, 387-391 Published: MAR 2019
  3. Depletion Layer Built-In Field at (1-100), (0001), and (000-1) GaN/Water Junction and Its Role in Semiconductor Nanowire Water Splitting By: H. Stokowski, L. Janicki, J. Serafińczuk, M. Siekacz, C. Skierbiszewski, R. Kudrawiec, Advanced Materials Interfaces 6, 1801497 Published: FEB 2019

    Full list of our publications HERE
    News archive

Our team

prof dr hab. Czesław

dr inż. Grzegorz
dr Henryk
dr inż. Marcin
dr inż. Marta
mgr Anna
mgr inż. Krzesimir
mgr inż. Paweł
mgr inż. Maciej
mgr inż. Mateusz
inż. Mikołaj
inż. Julia
inż. Natalia Fiuczek
inż. Mikołaj


Current list of our projects:

1. TeamTech

„Tunnel junction and its applications for GaN based optoelectronics”

2. N-side

"Polar GaN substrates with active N-side manufacturing and evaluation of its usefulness in epitaxy”


"Engineering of electric field and p-typ doping in InGaN/InGaN heterostructures grown by plasma-assisted molecular beam epitaxy – development of green nitride-based diodes.”


“Short Period Superlattices for Rational (In Ga)N”


"Development of high quality InAlN – the road to strain-free nitride lasers."

List of completed projects HERE


Video (only Polish language version) recorded in 2014 - “Patent na Patent”:

From this short video you can learn about Grzegorz Muzioł PhD thesis (4:10). He explains the role of InGaN laser diode waveguide design on the optical mode leakage to GaN substrate (5:08). You can hear Prof. Czesław Skierbiszewski tellinng about the properties and applications of gallium nitride (3:25), and Prof. Piotr Perlin (TopGaN CTO) stressing the importance of innovative research for polish hi-tech business (8:34).



Institute of High Pressure Physics
Polish Academy of Sciences "UNIPRESS"
Sokołowska 29/37
01-142 Warsaw

MBE LAB location:
al. Prymasa Tysiąclecia 98
01-424 Warsaw

public transportation:
Majakowskiego - tram stop
Obozowa - bus stop


+48 22 8760351 - office
+48 22 8760324 - lab