MBE research group is a part of the Institute of High Pressure Physics Polish Academy of Sciences (IHPP PAS) "Unipress".
We focus on the development of blue and green light-emitting diodes (LEDs) and laser diodes (LDs) using plasma-assisted molecular beam epitaxy (PAMBE). We carry out the research on long-wavelength light emitters: implement improvements in structure design and optimize optical and electrical parameters of gallium nitride (GaN) based devices. We investigate crystal growth mechanisms on GaN surfaces of various polarity and crystallographic orientation. We fabricate and study nitride heterostructures with tunnel junction. We also study vertical heterojunction transistors n-p-n (GaN/InGaN/GaN) fabricated on GaN substrates using MBE.
09.09.2019 Julia Sławińska and Natalia Fiuczek defended Master Thesis with honours. They carried out the research in Institute of High Pressure Physics PAS within Foundation for Polish Science projects: "Tunnel junction and its applications for GaN based optoelectronics" leaded by prof. Czesław Skierbiszewski and "Development of high quality InAlN – the road to strain-free nitride lasers" leaded by dr inż. Marta Sawicka. Congratulations!
24.07.2019 Julia Slawinska is a master student in prof. Czeslaw Skierbiszewski group in UNIPRESS. She presented at the conference poster entitled "Arrays of Nitride MicroLEDs with Tunnel Junctions Grown by Plasma Assisted Molecular Beam Epitaxy". Julia is involved in TEAM-TECH POIR.04.04.00-00-210C/16-00 project of the Foundation for Polish Science co-financed by the European Union under the European Regional Development Fund. More info at mrs website.
16.07.2018 Congratulation to Mikołaj Chlipała on an excellent defense of his MSc thesis (with honors). Thesis title was "Electroluminescence mechanism at cryogenic temperatures of nitride diodes with tunnel junction, grown by molecular beam epitaxy". Mikołaj Chlipała is a laureate of the Fundation for Polish Science scholarship and a team member of TEAM-TECH project.
Current list of our projects:
„Tunnel junction and its applications for GaN based optoelectronics”
"Monolithic integration of superconductors and semiconductors on nitride platform”
"Engineering of electric field and p-typ doping in InGaN/InGaN heterostructures grown by plasma-assisted molecular beam epitaxy – development of green nitride-based diodes.”
“Nitride based distributted feedback laser diodes”
"Development of high quality InAlN – the road to strain-free nitride lasers."
"Polarity engineering in nitride heterostructures"
List of completed projects HERE
Video (only Polish language version) recorded in 2014 - “Patent na Patent”:
From this short video you can learn about Grzegorz Muzioł PhD thesis (4:10). He explains the role of InGaN laser diode waveguide design on the optical mode leakage to GaN substrate (5:08). You can hear Prof. Czesław Skierbiszewski tellinng about the properties and applications of gallium nitride (3:25), and Prof. Piotr Perlin (TopGaN CTO) stressing the importance of innovative research for polish hi-tech business (8:34).
Institute of High Pressure Physics
Polish Academy of Sciences "UNIPRESS"
MBE LAB location:
al. Prymasa Tysiąclecia 98
PKP Koło - tram stop
Obozowa - bus stop
+48 22 8760351 - office
+48 22 8760324 - lab