MBE Laboratory

Institute of High Pressure Physics PAS

About us

MBE research group is a part of the Institute of High Pressure Physics Polish Academy of Sciences (IHPP PAS) "Unipress".

We focus on the development of blue and green light-emitting diodes (LEDs) and laser diodes (LDs) using plasma-assisted molecular beam epitaxy (PAMBE). We carry out the research on long-wavelength light emitters: implement improvements in structure design and optimize optical and electrical parameters of gallium nitride (GaN) based devices. We investigate crystal growth mechanisms on GaN surfaces of various polarity and crystallographic orientation. We fabricate and study nitride heterostructures with tunnel junction. We also study vertical heterojunction transistors n-p-n (GaN/InGaN/GaN) fabricated on GaN substrates using MBE.


Master thesis defense of Julia Sławińska and Natalia Fiuczek

09.09.2019 Julia Sławińska and Natalia Fiuczek defended Master Thesis with honours. They carried out the research in Institute of High Pressure Physics PAS within Foundation for Polish Science projects: "Tunnel junction and its applications for GaN based optoelectronics" leaded by prof. Czesław Skierbiszewski and "Development of high quality InAlN – the road to strain-free nitride lasers" leaded by dr inż. Marta Sawicka. Congratulations!

Best Poster Award for Julia Sławińska at 13th International Conference of Nitride Semiconductors 7-12.07.2019 in Bellevue"

24.07.2019 Julia Slawinska is a master student in prof. Czeslaw Skierbiszewski group in UNIPRESS. She presented at the conference poster entitled "Arrays of Nitride MicroLEDs with Tunnel Junctions Grown by Plasma Assisted Molecular Beam Epitaxy". Julia is involved in TEAM-TECH POIR.04.04.00-00-210C/16-00 project of the Foundation for Polish Science co-financed by the European Union under the European Regional Development Fund. More info at mrs website.

Public defense of Mikołaj Chlipała MSc thesis

16.07.2018 Congratulation to Mikołaj Chlipała on an excellent defense of his MSc thesis (with honors). Thesis title was "Electroluminescence mechanism at cryogenic temperatures of nitride diodes with tunnel junction, grown by molecular beam epitaxy". Mikołaj Chlipała is a laureate of the Fundation for Polish Science scholarship and a team member of TEAM-TECH project.

Previous news

Lately we published:
  1. Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBE By: M. Siekacz, P. Wolny, T. Ernst, E. Grzanka, G. Staszczak, T. Suski, A. Feduniewicz-Żmuda, M. Sawicka, J. Moneta, M. Anikeeva, T. Schulz, M. Albrecht, and C. Skierbiszewski, Superlattices and Microstructures 133, 106209 Published: July 2019
  2. Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface By: H. Turski, F. Krzyżewski, A. Feduniewicz-Żmuda, P. Wolny, M. Siekacz, G. Muzioł, C. Cheze, K. Nowakowski-Szkudlarek, H. Xing, D. Jena, M. Załuska-Kotur, C. Skierbiszewski, Applied Surface Science 484, 771-780 Published: AUG 2019
  3. Optical properties of III-nitride laser diodes with wide InGaN quantum wells By: G. Muzioł, M. Hajdel, M. Siekacz, K. Nowakowski-Szkudlarek, S. Stańczyk, H. Turski, C. Skierbiszewski, Applied Physics Express 12, 072003 Published: JUNE 2019
  4. Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions By: H. Turski, S. Bharadwaj, H. Xing, D. Jena, Journal of Applied Physics 125, 203104 Published: MAY 2019

    Full list of our publications HERE
    News archive

Our team

prof dr hab. Czesław

dr inż. Grzegorz
dr Henryk
dr inż. Marcin
dr inż. Marta
mgr Anna
mgr inż. Krzesimir
mgr inż. Paweł
mgr inż. Maciej
mgr inż. Mateusz
mgr inż. Mikołaj
mgr inż. Julia
mgr inż. Natalia
mgr inż. Mikołaj


Current list of our projects:

1. TeamTech

„Tunnel junction and its applications for GaN based optoelectronics”

2. NbN

"Monolithic integration of superconductors and semiconductors on nitride platform”

3. LIDER - towards green LDs

"Engineering of electric field and p-typ doping in InGaN/InGaN heterostructures grown by plasma-assisted molecular beam epitaxy – development of green nitride-based diodes.”


“Nitride based distributted feedback laser diodes”


"Development of high quality InAlN – the road to strain-free nitride lasers."


"Polarity engineering in nitride heterostructures"

List of completed projects HERE


Video (only Polish language version) recorded in 2014 - “Patent na Patent”:

From this short video you can learn about Grzegorz Muzioł PhD thesis (4:10). He explains the role of InGaN laser diode waveguide design on the optical mode leakage to GaN substrate (5:08). You can hear Prof. Czesław Skierbiszewski tellinng about the properties and applications of gallium nitride (3:25), and Prof. Piotr Perlin (TopGaN CTO) stressing the importance of innovative research for polish hi-tech business (8:34).



Institute of High Pressure Physics
Polish Academy of Sciences "UNIPRESS"
Sokołowska 29/37
01-142 Warsaw

MBE LAB location:
al. Prymasa Tysiąclecia 98
01-424 Warsaw

public transportation:
PKP Koło - tram stop
Obozowa - bus stop


+48 22 8760351 - office
+48 22 8760324 - lab