Marcin Siekacz graduated from Wrocław University of Technology, Faculty of Electronics. He obtained his PhD in 2012 at the Institute of High Pressure PAS under the supervision of prof. Czesław Skierbiszewski. The doctoral thesis entitled "Growth mechanisms and structural properties of GaN/AlGaN/InGaN quantum structures grown by plasma-assited molecular beam epitaxy" is available HERE. Marcin Siekacz is one of the MBE world experts. Together with prof. Skierbiszewski they created and developed the MBE laboratory in the Institute of High Pressure Physics.
Marcin Siekacz co-authored more than 78 scientific publications. In 2015 he was a PostDoc at Paul-Drude Institut in Berlin.
Marcin Siekacz most important achievements are:
Marcin Siekacz is an expert in nitride layers and structures epitaxy by MBE. He fabricates optoelectronic and electronic device structures.
tel. +48 22 876 0444
lab. +48 22 876 0324