Professor Czesław Skierbiszewski is the founder and leader of the molecular beam epitaxy (MBE) research group at the Institute of High Pressure Physics Polish Academy of Sciences. He graduated from the Faculty of Physics, University of Warsaw in 1984. After his doctorate, that covered HgSe high-pressure research, he was involved in the research of semiconductors of the GaAs family, doped with nitrogen, so-called "dilluted nitrides". His most important achievement in this field is the determination of InGaNAs effective mass dependence on the N content and on electron concentration. Since 2000 he has been researching epitaxial layers and structures grown on GaN substrates. He is the author of the first european blue nitride laser diode produced by the MBE technique, which he demonstrated in 2001. He fabricates also long-living (>15,000 h) laser diodes and first aluminum-free laser diodes. He has authored more than 140 publications in recognized physics and material science journals (h-index 22).
Professor Czesław Skierbiszewski scientific work focuses on the understanding of nitride growth physics by MBE and the optimization of laser and light-emitting diode structures. He fabricates long wavelength emitters of improved optical and electrical characteristics. Professor Skierbiszewski is a world expert in molecular beam epitaxy. Thanks to his close collaboration with TopGaNlaser company, many of the technological solutions is implemented to production.
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