dr hab. Henryk Turski

Henryk Turski graduated from the Faculty of Physics of Warsaw University in 2010. In 2015 he defended PhD thesis entitled "Growth mechanism of indium-gallium nitride grown by plasma-assisted molecular beam epitaxy". His PhD was supervised by prof. Czesław Skierbiszewski at the Institute of High Pressure PAS (text is available HERE). From 2012 to 2014 he was the National Science Center project leader "Microscopic mechanism of InGaN layers growth and its effect on composition fluctuations". He is currently a laureate of the LIDER grant and working on the project "Electric field and p-type doping engineering in InGaN/InGaN heterostructuctures fabricated by molecular beam-plasma epitaxy - development of green nitride diodes". Henryk Turski is a co-author of more than 40 publications in the field of physics. He recently served as a PostDoc at Cornell University in the United States.
Henryk Turski most important achievements are:

ORCID: 0000-0002-2686-9842

Research interests

Henryk Turski research interests include but are not limited to:

Research GANTS

Publication list

Articles published as a result of the LIDER Project:

  1. "Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties", G. Muziol, H. Turski, M. Siekacz, P. Wolny, J. Borysiuk, S. Grzanka, P. Perlin, C. Skierbiszewski, Optics Express, 25 (2017) 33113.
  2. "True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy", C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, P. Perlin, Applied Physics Express, 11 (2018) 034103.
  3. "Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE", H. Turski, G. Muzioł, M. Siekacz, P. Wolny, K. Szkudlarek, A. Feduniewicz-Żmuda, K. Dybko, C. Skierbiszewski, Journal of Crystal Growth, 482 (2018) 56-60.
  4. "Influence of Electron Blocking Layer on Properties of InGaN-Based Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy", M. Hajdel, G. Muziol, K. Nowakowski-Szkudlarek, M. Siekacz, A. Feduniewicz-Żmuda, P. Wolny, C. Skierbiszewski, Acta Physica Polonica A, 136 (2019) 593-597.
  5. "Optical properties of III-nitride laser diodes with wide InGaN quantum wells", G. Muziol, M. Hajdel, M. Siekacz, K. Szkudlarek, S. Stanczyk, H. Turski, C. Skierbiszewski, Applied Physics Express, 12 (2019) 072003.
  6. "Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy", G. Muziol, M. Siekacz, K. Nowakowski-Szkudlarek, M. Hajdel, J. Smalc-Koziorowska, A. Feduniewicz-Żmuda, E. Grzanka, P. Wolny, H. Turski, P. Wiśniewski, P. Perlin, C. Skierbiszewski, Materials Science in Semiconductor Processing, 91 (2019) 387-391.
  7. "Beyond Quantum Efficiency Limitations Originating from the Piezoelectric Polarization in Light-Emitting Devices", G. Muziol, H. Turski, M. Siekacz, K. Szkudlarek, L. Janicki, M. Baranowski, S. Zolud, R. Kudrawiec, T. Suski, C. Skierbiszewski, Acs Photonics, 6 (2019) 1963-1971.
  8. "Stack of two III-nitride laser diodes interconnected by a tunnel junction", M. Siekacz, G. Muziol, M. Hajdel, M. Zak, K. Nowakowski-Szkudlarek, H. Turski, M. Sawicka, P. Wolny, A. Feduniewicz-Zmuda, S. Stanczyk, J. Moneta, C. Skierbiszewski, Opt Express, 27 (2019) 5784-5791.
  9. "Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions", H. Turski, S. Bharadwaj, H. Xing, D. Jena, Journal of Applied Physics, 125 (2019) 203104.
  10. "Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE", H. Turski, A. Feduniewicz-Żmuda, M. Sawicka, A. Reszka, B. Kowalski, M. Kryśko, P. Wolny, J. Smalc-Koziorowska, M. Siekacz, G. Muzioł, K. Nowakowski-Szukudlarek, S. Grzanka, C. Skierbiszewski, Journal of Crystal Growth, 512 (2019) 208-212.
  11. "Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface", H. Turski, F. Krzyżewski, A. Feduniewicz-Żmuda, P. Wolny, M. Siekacz, G. Muziol, C. Cheze, K. Nowakowski-Szukudlarek, H. Xing, D. Jena, M. Załuska-Kotur, C. Skierbiszewski, Applied Surface Science, 484 (2019) 771-780.
  12. "Buried tunnel junction for p-down nitride laser diodes", H. Turski, M. Siekacz, G. Muziol, M. Zak, S. Bharadwaj, M. Chlipala, K. Nowakowski-Szkudlarek, M. Hajdel, H.G. Xing, D. Jena, C. Skierbiszewski, in: 2019 Device Research Conference (DRC), 2019, pp. 241-242.
  13. "Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes", S. Bharadwaj, J. Miller, K. Lee, J. Lederman, M. Siekacz, H. Xing, D. Jena, C. Skierbiszewski, H. Turski, Optics Express, 28 (2020) 4489.
  14. "Nitride light-emitting diodes for cryogenic temperatures", M. Chlipala, H. Turski, M. Siekacz, K. Pieniak, K. Nowakowski-Szkudlarek, T. Suski, C. Skierbiszewski, Optics Express, 28 (2020).
  15. "Influence of InGaN waveguide on injection efficiency in III-nitride laser diodes", M. Hajdel, G. Muzioł, K. Nowakowski-Szkudlarek, M. Siekacz, P. Wolny, C. Skierbiszewski, Optica Applicata, 50 (2020).
  16. "Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy", G. Muziol, M. Hajdel, H. Turski, K. Nomoto, M. Siekacz, K. Nowakowski-Szkudlarek, M. Zak, D. Jena, H.G. Xing, P. Perlin, C. Skierbiszewski, Opt Express, 28 (2020) 35321-35329.
  17. "Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching", M. Sawicka, N. Fiuczek, H. Turski, G. Muziol, M. Siekacz, K. Nowakowski-Szkudlarek, A. Feduniewicz-Zmuda, P. Wolny, C. Skierbiszewski, Nanoscale, (2020).
  18. "Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions", M. Siekacz, G. Muziol, H. Turski, M. Hajdel, M. Żak, M. Chlipała, M. Sawicka, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, J. Smalc-Koziorowska, S. Stańczyk, C. Skierbiszewski, Electronics, 9 (2020).
  19. "Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design", H. Turski, S. Bharadwaj, M. Siekacz, G. Muziol, M. Chlipala, M. Zak, M. Hajdel, K. Nowakowski-Szkudlarek, S. Stanczyk, H. Xing, D. Jena, C. Skierbiszewski, H. Morkoç, H. Fujioka, U.T. Schwarz, in: Gallium Nitride Materials and Devices XV, 2020.
  20. "Nitride LEDs and Lasers with Buried Tunnel Junctions", H. Turski, M. Siekacz, G. Muziol, M. Hajdel, S. Stanczyk, M. Zak, M. Chlipala, C. Skierbiszewski, S. Bharadwaj, H.G. Xing, D. Jena, Ecs Journal of Solid State Science and Technology, 9 (2020) 015018.
  21. "Enhanced efficiency in bottom tunnel junction InGaN blue LEDs", L. van Deurzen, S. Bharadwaj, K. Lee, V. Protasenko, H. Turski, H. Xing, D. Jena, M. Strassburg, J.K. Kim, M.R. Krames, in: Light-Emitting Devices, Materials, and Applications XXV, 2021.
  22. "Tunnel Junctions with a Doped (In,Ga)N Quantum Well for Vertical Integration of III-Nitride Optoelectronic Devices", M. Żak, G. Muziol, H. Turski, M. Siekacz, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, M. Chlipała, A. Lachowski, C. Skierbiszewski, Physical Review Applied, 15 (2021).

Articles published as a result of the HOMING Project:

  1. "Beyond Quantum Efficiency Limitations Originating from the Piezoelectric Polarization in Light-Emitting Devices", G. Muziol, H. Turski, M. Siekacz, K. Szkudlarek, L. Janicki, M. Baranowski, S. Zolud, R. Kudrawiec, T. Suski, C. Skierbiszewski, Acs Photonics, 6 (2019) 1963-1971.
  2. "Buried tunnel junction for p-down nitride laser diodes", H. Turski, M. Siekacz, G. Muziol, M. Zak, S. Bharadwaj, M. Chlipala, K. Nowakowski-Szkudlarek, M. Hajdel, H.G. Xing, D. Jena, C. Skierbiszewski, in: 2019 Device Research Conference (DRC), 2019, pp. 241-242.
  3. "Gallium nitride tunneling field-effect transistors exploiting polarization fields", A. Chaney, H. Turski, K. Nomoto, Z. Hu, J. Encomendero, S. Rouvimov, T. Orlova, P. Fay, A. Seabaugh, H.G. Xing, D. Jena, Applied Physics Letters, 116 (2020) 073502.
  4. "Nitride light-emitting diodes for cryogenic temperatures", M. Chlipala, H. Turski, M. Siekacz, K. Pieniak, K. Nowakowski-Szkudlarek, T. Suski, C. Skierbiszewski, Optics Express, 28 (2020).
  5. "Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs", A. Reszka, K.P. Korona, S. Tiagulskyi, H. Turski, U. Jahn, S. Kret, R. Bożek, M. Sobanska, Z.R. Zytkiewicz, B.J. Kowalski, Electronics, 10 (2020).
  6. "Vertical Integration of Nitride Laser Diodes and Light Emitting Diodes by Tunnel Junctions", M. Siekacz, G. Muziol, H. Turski, M. Hajdel, M. Żak, M. Chlipała, M. Sawicka, K. Nowakowski-Szkudlarek, A. Feduniewicz-Żmuda, J. Smalc-Koziorowska, S. Stańczyk, C. Skierbiszewski, Electronics, 9 (2020).
  7. "Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design", H. Turski, S. Bharadwaj, M. Siekacz, G. Muziol, M. Chlipala, M. Zak, M. Hajdel, K. Nowakowski-Szkudlarek, S. Stanczyk, H. Xing, D. Jena, C. Skierbiszewski, H. Morkoç, H. Fujioka, U.T. Schwarz, in: Gallium Nitride Materials and Devices XV, 2020.
  8. "Nitride LEDs and Lasers with Buried Tunnel Junctions", H. Turski, M. Siekacz, G. Muziol, M. Hajdel, S. Stanczyk, M. Zak, M. Chlipala, C. Skierbiszewski, S. Bharadwaj, H.G. Xing, D. Jena, Ecs Journal of Solid State Science and Technology, 9 (2020) 015018.
  9. "Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction", K. Pieniak, M. Chlipala, H. Turski, W. Trzeciakowski, G. Muziol, G. Staszczak, A. Kafar, I. Makarowa, E. Grzanka, S. Grzanka, C. Skierbiszewski, T. Suski, Optics Express, 29 (2021).
  10. "Enhanced efficiency in bottom tunnel junction InGaN blue LEDs", L. van Deurzen, S. Bharadwaj, K. Lee, V. Protasenko, H. Turski, H. Xing, D. Jena, M. Strassburg, J.K. Kim, M.R. Krames, in: Light-Emitting Devices, Materials, and Applications XXV, 2021.

Contact

tel. +48 22 876 0444
lab. +48 22 876 0324
email: henryk@unipress.waw.pl


ORCID: 0000-0002-2686-9842