Project LIDER
„Engineering of electric field and p-typ doping in InGaN/InGaN heterostructures grown by plasma-assisted molecular beam epitaxy – development of green nitride-based diodes”

Programme Description

The purpose of the LIDER Programme is to help young scientists learn how to plan research on their own, manage and lead their own research team while carrying out projects likely to be implemented on the market.
The LIDER Programme is also aimed at encouraging scientists to cooperate with businesses while performing economically valuable and implementable studies and research and enhancing mobility and exchange between research sectors, universities and research units.

Project Goal

Aim of the project is to develop a process of producing high efficiency green emitting semiconductor diodes based on nitrides. The research conducted in the framework of the project will help in the development of high efficiency light emitters. For realization of the project we will exploit the unique capabilities of the plasma assisted molecular beam epitaxy (PAMBE). Production of laser diode structures with this technique, patented by Institute of High Pressure Physics PAS (IHPP PAS), offers few important advantages. Firstly, thanks to the feasibility of control of the layer thickness up to a single monolayer it is possible to produce quantum wells with a shape which compensate the detrimental effect of built in electrical fields which reduces the efficiency of structures emitting light in green wavelength region. The second advantage of using the PAMBE technique is the low growth temperature (while sustaining the high quality of the crystal). One of the biggest obstacles in the production of green emitting devices by other epitaxial techniques is the decompositions of the quantum wells in high growth temperatures needed to obtain high quality p-type material. In the project we will optimize the growth parameters of p-type layers (grown after the quantum wells) to keep the high quality of the crystal and not to damage the quantum wells. Additionally, use of efficient nitrogen source, recently developed by manufacturers of PAMBE reactors, will allow for development of high quality quantum wells for green laser diodes.

Research Team

Research team of the Project

dr Henryk Turski
dr inż. Marta Sawicka
mgr inż. Krzesimir Nowakowski-


Project is carried out from 2017 to 2020

Project resulted in the following publications:

  1. "Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE" Henryk Turski, Grzegorz Muzioł, Marcin Siekacz, Pawel Wolny, Krzesimir Szkudlarek, Anna Feduniewicz-Zmuda, Krzysztof Dybko, Czeslaw Skierbiszewski, Journal of Crystal Growth 482 (2018) 56–60