Project LIDER
„Engineering of electric field and p-typ doping in InGaN/InGaN heterostructures grown by plasma-assisted molecular beam epitaxy – development of green nitride-based diodes”

Programme Description

The purpose of the LIDER Programme is to help young scientists learn how to plan research on their own, manage and lead their own research team while carrying out projects likely to be implemented on the market.
The LIDER Programme is also aimed at encouraging scientists to cooperate with businesses while performing economically valuable and implementable studies and research and enhancing mobility and exchange between research sectors, universities and research units.

Project value: PLN 1 196 500,00
Value of financing: PLN 1 196 500,00
Project financed by the National Center for Research and Development under the LIDER program.

Project Goal

Aim of the project is to develop a process of producing high efficiency green emitting semiconductor diodes based on nitrides. The research conducted in the framework of the project will help in the development of high efficiency light emitters. For realization of the project we will exploit the unique capabilities of the plasma assisted molecular beam epitaxy (PAMBE). Production of laser diode structures with this technique, patented by Institute of High Pressure Physics PAS (IHPP PAS), offers few important advantages. Firstly, thanks to the feasibility of control of the layer thickness up to a single monolayer it is possible to produce quantum wells with a shape which compensate the detrimental effect of built in electrical fields which reduces the efficiency of structures emitting light in green wavelength region. The second advantage of using the PAMBE technique is the low growth temperature (while sustaining the high quality of the crystal). One of the biggest obstacles in the production of green emitting devices by other epitaxial techniques is the decompositions of the quantum wells in high growth temperatures needed to obtain high quality p-type material. In the project we will optimize the growth parameters of p-type layers (grown after the quantum wells) to keep the high quality of the crystal and not to damage the quantum wells. Additionally, use of efficient nitrogen source, recently developed by manufacturers of PAMBE reactors, will allow for development of high quality quantum wells for green laser diodes.

Research Team

Research team of the Project

dr Henryk Turski
dr inż. Marta Sawicka
mgr inż. Krzesimir Nowakowski-
inż. Mikołaj


Project is carried out from 2017 to 2020

Project resulted in the following publications:

[1] "Optical properties of III-nitride laser diodes with wide InGaN quantum wells", G. Muziol, M. Hajdel, M. Siekacz, K. Szkudlarek, S. Stanczyk, H. Turski, C. Skierbiszewski, Applied Physics Express, 12 (2019) 072003

[2] "Beyond Quantum Efficiency Limitations Originating from the Piezoelectric Polarization in Light-Emitting Devices", G. Muziol, H. Turski, M. Siekacz, K. Szkudlarek, L. Janicki, M. Baranowski, S. Zolud, R. Kudrawiec, T. Suski, C. Skierbiszewski, Acs Photonics, 6 (2019) 1963-1971.

[3] "Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions", H. Turski, S. Bharadwaj, H. Xing, D. Jena, Journal of Applied Physics, 125 (2019) 203104.

[4] "Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE", H. Turski, A. Feduniewicz-Żmuda, M. Sawicka, A. Reszka, B. Kowalski, M. Kryśko, P. Wolny, J. Smalc-Koziorowska, M. Siekacz, G. Muzioł, K. Nowakowski-Szukudlarek, S. Grzanka, C. Skierbiszewski, Journal of Crystal Growth, 512 (2019) 208-212.

[5] „Stack of two III-nitride laser diodes interconnected by a tunnel junction”, M. Siekacz, G. Muziol, M. Hajdel, M. Żak, K. Nowakowski-Szkudlarek, H. Turski, M. Sawicka, P. Wolny, A. Feduniewicz-Żmuda, S. Stanczyk, J. Moneta, C. Skierbiszewski, wydawnictwo Optical Society of America, Optics Express 27 (2019) 5784–5791.

[6] „Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy”, G Muziol, M Siekacz, K Nowakowski-Szkudlarek, M Hajdel, J Smalc-Koziorowska, A Feduniewicz-Żmuda, E Grzanka, P Wolny, H Turski, P Wiśniewski, P Perlin, C Skierbiszewski, wydawnictwo Pergamon, Materials Science in Semiconductor Processing 91 (2019) 387-391.

[7] „Nitrogen-rich Growth for Device Quality N-polar InGaN/GaN Quantum Wells by Plasma-Assisted MBE”, Henryk Turski, Anna Feduniewicz-Żmuda, Marta Sawicka, Anna Reszka, Bogdan Kowalski, Marcin Kryśko, Paweł Wolny, Julita Smalc-Koziorowska, Marcin Siekacz, Grzegorz Muzioł, Krzesimir Nowakowski-Szukudlarek, Szymon Grzanka, Czeslaw Skierbiszewski, wydawnictwo North-Holland, Journal of Crystal Growth 512 (2019) 208-212.

[8] „Tunnel junctions for two-color nitride light emitting diodes and laser diodes grown by plasma assisted molecular beam epitaxy”, C Skierbiszewski, H Turski, M Zak, K Nowakowski-Szkudlarek, G Muziol, M Siekacz, A Feduniewicz-Zmuda, M Sawicka, wydawnictwo IEEE, 76th Device Research Conference (DRC) (2018).

[9] „True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy”, Czeslaw Skierbiszewski, Grzegorz Muziol, Krzesimir Nowakowski-Szkudlarek, Henryk Turski, Marcin Siekacz, Anna Feduniewicz-Zmuda, Anna Nowakowska-Szkudlarek, Marta Sawicka, Piotr Perlin, wydawnictwo IOP Publishing, Applied Physics Express 11 (2018) 034103.

[10] „Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE”, Henryk Turski, Grzegorz Muzioł, Marcin Siekacz, Pawel Wolny, Krzesimir Szkudlarek, Anna Feduniewicz-Zmuda, Krzysztof Dybko, Czeslaw Skierbiszewski, wydawnictwo Elsevier, Journal of Crystal Growth 482 (2018) 56–60.

[11] „Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties”, G Muziol, H Turski, M Siekacz, P Wolny, J Borysiuk, S Grzanka, P Perlin, C Skierbiszewski, wydawnictwo Optical Society of America, Optics Express 25 (2017) 33113–33121.