Marta Sawicka, PhD

Marta Sawicka graduated from the Faculty of Materials Science, Warsaw University of Technology. She obtained her PhD in 2015 in the Institute of High Pressure Physics PAS under the supervision of prof. Czesław Skierbiszewski. The thesis entitled “Growth mechanisms of GaN, InGaN and AlGaN layers on GaN substrates of various crystallographic orientation studied by plasma-assisted molecular beam epitaxy" is available HERE(in Polish). She co-authored more than 40 scientific publications. From 2012 to 2016 she was a project leader of National Science Center PRELUDIUM project "Influence of GaN crystal anisotropy on the properties of InGaN and AlGaN quantum layers and structures with non-polar (10-10) and semipolar (20-21) orientation".
The main scientific accomplishments of Marta Sawicka are:

Research interests

Marta Sawicka is an expert in epitaxy and characterization of nitride layers and structures. She is interested in surface morphology and structural properties studies by various microscopy methods - AFM, TEM, SEM, OM. She investigates growth mechanisms of GaN, InGaN, InAlN i AlGaN, with the focus on the effects of GaN substrate miscut and surface crystallographic orientation: Ga-polar (0001), N-polar (000-1), semipolar (20-21) and nonpolar (10-10). She collaborates with TopGaN in the area of laser diode research and development.

Research GRANTS

Publication list

  1. Nitrogen-rich growth for device quality N-polar InGaN/GaN quantum wells by plasma-assisted MBE, H. Turski, A. Feduniewicz-Żmuda, M. Sawicka, A. Reszka, B. Kowalski, M. Kryśko, P. Wolny, J. Smalc-Koziorowska, M. Siekacz, G. Muzioł, K. Nowakowski-Szukudlarek, S. Grzanka, C. Skierbiszewski, Journal of Crystal Growth, 512 208 (2019)
  2. Stack of two III-nitride laser diodes interconnected by a tunnel junction, M. Siekacz, G. Muziol, M. Hajdel, M. Żak, K. Nowakowski-Szkudlarek, H. Turski, M. Sawicka, P. Wolny, A. Feduniewicz-Żmuda, S. Stanczyk, J. Moneta, C. Skierbiszewski, Optics Express, 27 5784 (2019)
  3. Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in InxGa1-xN/In0.02Ga0.98N superlattices, P. Wolny, M. Anikeeva, M. Sawicka, T. Schulz, T. Markurt, M. Albrecht, M. Siekacz, C. Skierbiszewski, Journal of Applied Physics, 124 065701 (2018)
  4. C. Skierbiszewski, H. Turski, M. Zak, K. Nowakowski-Szkudlarek, G. Muziol, M. Siekacz, A. Feduniewicz-Zmuda, M. Sawicka, 2018 76th Device Research Conference (DRC), 2018, pp. 1.
  5. True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy, C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, P. Perlin, Applied Physics Express, 11 034103 (2018)
  6. InGaN Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy, C. Skierbiszewski, M. Grzegorz, H. Turski, S. Marcin, M. Sawicka, Handbook of Solid-State Lighting and LEDs, CRC Press, 2017, pp. 321
  7. Comparative study of semipolar (20-21), nonpolar (10-10) and polar (0001) InGaN multi-quantum well structures grown under N- and In-excess by plasma assisted molecular beam epitaxy, M. Sawicka, P. Wolny, M. Kryśko, H. Turski, K. Szkudlarek, S. Grzanka, C. Skierbiszewski, Journal of Crystal Growth, 465 43 (2017)
  8. Indium incorporation in semipolar and nonpolar InGaN grown by plasma assisted molecular beam epitaxy, M. Sawicka, A. Feduniewicz-Żmuda, M. Kryśko, H. Turski, G. Muziol, M. Siekacz, P. Wolny, C. Skierbiszewski, Journal of Crystal Growth, 459 129 (2017)
  9. Miscut dependent surface evolution in the process of N-polar growth under N-rich condition, F. Krzyżewski, M.A. Załuska-Kotur, H. Turski, M. Sawicka, C. Skierbiszewski, Journal of Crystal Growth, 457 38 (2016).
  10. Strain relaxation in semipolar (202¯1) InGaN grown by plasma assisted molecular beam epitaxy, M. Sawicka, M. Kryśko, G. Muziol, H. Turski, M. Siekacz, P. Wolny, J. Smalc-Koziorowska, C. Skierbiszewski, Journal of Applied Physics, 119 185701 (2016)
  11. Sensitivity of Fermi level position at Ga-polar, N-polar, and nonpolar m -plane GaN surfaces to vacuum and air ambient, Ł. Janicki, M. Ramírez-López, J. Misiewicz, G. Cywiński, M. Boćkowski, G. Muzioł, C. Chèze, M. Sawicka, C. Skierbiszewski, R. Kudrawiec, Japanese Journal of Applied Physics, 55 05FA08 (2016)
  12. Surface potential barrier in m -plane GaN studied by contactless electroreflectance, L. Janicki, J. Misiewicz, G. Cywiński, M. Sawicka, C. Skierbiszewski, R. Kudrawiec, Applied Physics Express, 9 021002 (2016)
  13. Cyan laser diode grown by plasma-assisted molecular beam epitaxy, H. Turski, G. Muziol, P. Wolny, S. Grzanka, G. Cywiński, M. Sawicka, P. Perlin, C. Skierbiszewski, Applied Physics Letters, 104 023503 (2014)
  14. AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy, C. Skierbiszewski, H. Turski, G. Muziol, P. Wolny, G. Cywiński, S. Grzanka, J. Smalc-Koziorowska, M. Sawicka, P. Perlin, Z.R. Wasilewski, S. Porowski, Journal of Vacuum Science & Technology B, 32 (2014)
  15. Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy, C. Skierbiszewski, H. Turski, G. Muziol, M. Siekacz, M. Sawicka, G. Cywiński, Z.R. Wasilewski, S. Porowski, Journal of Physics D: Applied Physics, 47 073001 (2014)
  16. Semipolar (20-21) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy, M. Sawicka, G. Muziol, H. Turski, A. Feduniewicz-Żmuda, M. Kryśko, S. Grzanka, E. Grzanka, J. Smalc-Koziorowska, M. Albrecht, R. Kucharski, P. Perlin, C. Skierbiszewski, Journal of Vacuum Science & Technology B, 32 02C115 (2014)
  17. True-blue laser diodes grown by plasma-assisted MBE on bulk GaN substrates, G. Muziol, H. Turski, M. Siekacz, P. Wolny, M. Sawicka, S. Grzanka, P. Perlin, T. Suski, Z.R. Wasilewski, I. Grzegory, S. Porowski, C. Skierbiszewski, physica status solidi (c), 11 666 (2014)
  18. Nonequivalent atomic step edges—Role of gallium and nitrogen atoms in the growth of InGaN layers, H. Turski, M. Siekacz, Z.R. Wasilewski, M. Sawicka, S. Porowski, C. Skierbiszewski, Journal of Crystal Growth, 367 115 (2013)
  19. MBE fabrication of III-N-based laser diodes and its development to industrial system, C. Skierbiszewski, M. Siekacz, H. Turski, G. Muziol, M. Sawicka, P. Perlin, Z.R. Wasilewski, S. Porowski, Journal of Crystal Growth, 378 278 (2013)
  20. Ultraviolet laser diodes grown on semipolar (20-21) GaN substrates by plasma-assisted molecular beam epitaxy, M. Sawicka, G. Muziol, H. Turski, S. Grzanka, E. Grzanka, J. Smalc-Koziorowska, J.L. Weyher, C. Cheze, M. Albrecht, R. Kucharski, P. Perlin, C. Skierbiszewski, Applied Physics Letters, 102 251101 (2013)
  21. Growth mechanisms in semipolar and nonpolar m-plane AlGaN/GaN structures grown by PAMBE under N-rich conditions, M. Sawicka, C. Chèze, H. Turski, J. Smalc-Koziorowska, M. Kryśko, S. Kret, T. Remmele, M. Albrecht, G. Cywiński, I. Grzegory, C. Skierbiszewski, Journal of Crystal Growth, 377 184 (2013)
  22. Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (20-21) substrates, M. Sawicka, C. Cheze, H. Turski, G. Muziol, S. Grzanka, C. Hauswald, O. Brandt, M. Siekacz, R. Kucharski, T. Remmele, M. Albrecht, M. Krysko, E. Grzanka, T. Sochacki, C. Skierbiszewski, Applied Physics Letters, 102 111107 (2013)
  23. Determination of gain in AlGaN cladding free nitride laser diodes, G. Muziol, H. Turski, M. Siekacz, M. Sawicka, P. Wolny, P. Perlin, C. Skierbiszewski, Applied Physics Letters, 103 061102 (2013)
  24. Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy, R. Kudrawiec, L. Janicki, M. Gladysiewicz, J. Misiewicz, G. Cywinski, M. Bockowski, G. Muziol, C. Cheze, M. Sawicka, C. Skierbiszewski, Applied Physics Letters, 103 052107 (2013)
  25. Surface properties of c-plane GaN grown by plasma-assisted molecular beam epitaxy, G. Cywinski, R. Kudrawiec, L. Janicki, J. Misiewicz, C. Cheze, M. Siekacz, M. Sawicka, P. Wolny, M. Bockowski, C. Skierbiszewski, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 31 03C112 (2013)
  26. Step-flow growth mode instability of N-polar GaN under N-excess, C. Cheze, M. Sawicka, M. Siekacz, H. Turski, G. Cywinski, J. Smalc-Koziorowska, J.L. Weyher, M. Krysko, B. Lucznik, M. Bockowski, C. Skierbiszewski, Applied Physics Letters, 103 071601 (2013)
  27. True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy, C. Skierbiszewski, M. Siekacz, H. Turski, G. Muziol, M. Sawicka, P. Wolny, G. Cywinski, L. Marona, P. Perlin, P. Wisniewski, M. Albrecht, Z.R. Wasilewski, S. Porowski, Applied Physics Express, 5 112103 (2012)
  28. AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy, C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, G. Cywiński, C. Cheze, S. Grzanka, P. Perlin, P. Wiśniewski, Z.R. Wasilewski, S. Porowski, Applied Physics Express, 5 022104 (2012)
  29. Waveguide Design for Long Wavelength InGaN Based Laser Diodes, G. Muziol, H. Turski, M. Siekacz, M. Sawicka, P. Wolny, C. Cheze, G. Cywinski, P. Perlin, C. Skierbiszewski, Acta Physica Polonica A, 122 1031 (2012).
  30. InGaN laser diodes operating at 450-460 nm grown by rf-plasma MBE, C. Skierbiszewski, M. Siekacz, H. Turski, G. Muzioł, M. Sawicka, A. Feduniewicz-Żmuda, J. Smalc-Koziorowska, P. Perlin, S. Grzanka, Z. R. Wasilewski, R. Kucharski, S. Porowski, J. Vac. Sci. Technol. B 30, (2012) doi:10.1116/1.3665223
  31. InAlGaN laser diodes grown by plasma assisted molecular beam epitaxy, C. Skierbiszewski, M. Siekacz, H. Turski, M. Sawicka, A. Feduniewicz-Żmuda, P. Perlin, T. Suski, Z. Wasilewski, I. Grzegory, S. Porowski, Lithuanian Journal of Physics (accepted)
  32. Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy, M. Siekacz, M. Sawicka, H. Turski, G. Cywiński, A. Khachapuridze, P. Perlin, T. Suski, M. Boćkowski, J. Smalc-Koziorowska, M. Kryśko, R. Kudrawiec, M. Syperek, J. Misiewicz, Z. Wasilewski, S. Porowski, and C. Skierbiszewski, J. Appl. Phys. 110, 063110 (2011); doi:10.1063/1.3639292
  33. Step-flow anisotropy of the m-plane GaN (1-100) grown under nitrogen-rich conditions by PAMBE, Marta Sawicka, Henryk Turski, Marcin Siekacz, Julita Smalc-Koziorowska, Marcin Kryśko, Igor Dzięcielewski, Izabella Grzegory, and Czesław Skierbiszewski, Phys. Rev. B 83, 245434 (2011); doi:10.1103/PhysRevB.83.245434
  34. Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates, Julita Smalc-Koziorowska, Marta Sawicka, Thilo Remmele, Czeslaw Skierbiszewski, Izabella Grzegory and Martin Albrecht, Appl. Phys. Lett. 99, 061901 (2011); doi:10.1063/1.3622642
  35. High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy, Marta Sawicka, Anna Feduniewicz-Żmuda, Henryk Turski, Marcin Siekacz, Szymon Grzanka, Marcin Kryśko, Igor Dzięcielewski, Izabella Grzegory, and Czesław Skierbiszewski, J. Vac. Sci. Technol. B 29, 03C135 (2011); doi:10.1116/1.3589228
  36. Growth mechanism of InGaN by Plasma Assisted Molecular Beam Epitaxy, H. Turski, M. Siekacz, M. Sawicka, G. Cywinski, M. Krysko, S. Grzanka, J. Smalc-Koziorowska, I. Grzegory, S. Porowski, Z. R. Wasilewski, C. Skierbiszewski, J. Vac. Sci. Technol. B 29, 03C136 (2011); doi:10.1116/1.3590932
  37. Highly reproducible, stable and multiply regenerated surface-enhanced Raman scattering substrate for biomedical applications, Agnieszka Kaminska, Igor Dzięcielewski, Jan L. Weyher, Jacek Waluk, Sylwester Gawinkowski, Volodymyr Sashuk, Marcin Fiałkowski, Marta Sawicka, Tadeusz Suski, Sylwester Porowski and Robert Hołyst, J. Mater. Chem., 21, 8662-8669 (2011), doi: 10.1039/C0JM03336G
  38. Broadening of intersubband transitions in InGaN/AlInN multi quantum wells, G. Cywiński, M. Gladysiewicz, R. Kudrawiec, M. Kryśko, A. Feduniewicz-Żmuda, M. Siekacz, M. Sawicka, P. Wolny, J. Smalc-Koziorowska, L. Nevou, M. Tchernycheva, F. H. Julien, J. Misiewicz, C. Skierbiszewski, J. Vac. Sci. Technol. B 28, C3B17 (2010); doi:10.1116/1.3319325,
  39. InGaN light emitting diodes for 415 nm–520 nm spectral range by plasma assisted MBE, M. Siekacz, M. Ł. Szańkowska, A. Feduniewicz-Zmuda, J. Smalc-Koziorowska, G. Cywiński, S. Grzanka, Z. R. Wasilewski, I. Grzegory, B. Łucznik, S. Porowski, C. Skierbiszewski, Phys. Status Solidi C 6, No. S2, S917–S920 (2009) / DOI 10.1002/pssc.200880973
  40. Influence of Ti on the Mechanical Properties of AgCuInTi Active Brazing Fillers, M. Galli, J. Janczak-Rusch, Marta Szankowska, Advanced Engineering Materials 11, No. 1-2, (2009), DOI: 10.1002/adem.200800310

Contact

tel. +48 22 876 0305
lab. +48 22 876 0324
email: sawicka@unipress.waw.pl