Krzesimir Nowakowski-Szkudlarek is a graduate of the Faculty of Physics, Warsaw University of Technology. Since 2012 he has been working with the Institute of High Pressure Physics PAS. Since 2013 he is a PhD student of prof. Czesław Skierbiszewski and cooperates with the MBE group. During his studies he took a 4-month internship at the University of Montpellier in France and two weeks at the Laboratory of the Institute of Semiconductors of the Chinese Academy of Sciences in Beijing. He co-authored 8 scientific publications.
Main scientific accomplishments of Krzesimir Nowakowski-Szkudlarek are:
Krzesimir Nowakowski-Szkudlarek is an expert of GaN based herterostructures processing such as: 2DEG, GaN/AlGaN HEMT transistors, Schottky diodes, LEDs and laser diodes. He is interested in full spectrum of GaN substrate preparation for epitaxial processes.
tel. +48 22 876 0444
lab. +48 22 876 0324