Centrum Fizyki i Technologii Półprzewodników Azotkowych "GaN-Unipress"

The aim of the GaN-Unipress Center for Nitride Semiconductor Physics and Technology project is to develop a world-class research center specializing in nitride semiconductors (GaN) and their advanced applications in power electronics and quantum technologies. The project builds on the recognized potential of the Institute of High Pressure Physics of the Polish Academy of Sciences (IWC PAN), which possesses unique infrastructure and expertise in ammonothermal growth of GaN crystals, substrate preparation, epitaxy of quantum structures, fabrication of GaN-on-GaN devices, and fundamental research in nitride semiconductor physics.

The project involves four closely cooperating research teams. WP1 focuses on developing ammonothermal crystallization technology, enabling the production of 4-inch GaN substrates with record-high structural quality (including the Borrmann effect). WP2 designs and manufactures advanced power diodes (p-n, p-i-n, Schottky), using epitaxy, ion implantation, and high-pressure annealing for dopant activation.

WP3 develops single-photon sources and quantum sensors based on GaN doped with rare-earth ions, while WP4 applies artificial intelligence and machine learning to optimize processes, create digital twins, and accelerate the research and development cycle. Together, these activities provide an integrated approach across the entire technology chain—from material crystallization, through device design, to digital optimization.

The project does not focus on basic research; instead, it targets the development of technologies with strong implementation and commercialization potential. Ultimately, GaN-Unipress is intended to become a global leader in modern semiconductor technologies.