Logo ISGN-7 Logo ISGN-7

International Symposium of Growth of III-Nitrides
ISGN-7

5-10 August 2018, Warsaw, Poland

Organizers: Logo UW Logo Unipress Logo Mazurkas

Plenary Speakers

  1. Hiroshi Amano – Nobel Prize Winner
    Nagoya University, Japan
    Tbd

  2. Shuji Nakamura – Nobel Prize Winner
    UCSB, USA
    LED and Laser Diodes

  3. Yusuke Mori
    Osaka University, Japan
    Recent Progress of GaN Growth by Na-flux Method

  4. Sylwester Porowski
    IHPP PAS, Poland
    Tbd

  5. Zlatko Sitar
    NCSU, USA
    AlGaN - a semiconductor that nature has never intended

  6. Chris Van de Walle
    UCSB, USA
    Acceptors in nitrides: doping, compensation, and impact on device performance

Invited Speakers

Growth

  1. Shigefusa F. Chichibu
    Institute of Multidisciplinary Research for Advanced Materials (IMRAM) and Department of Applied Physics, Tohoku University, Japan
    Acidic ammonothermal growth of GaN

  2. Hajime Fujikura
    SCIOCS, Japan
    HVPE as a new tool for homo-epitaxial growth of highly-pure and thick GaN drift layers for power devices

  3. Carsten Hartmann
    IKZ, Germany
    On the preparation of AlN single crystal boules and substrates, and subsequent epitaxy for AlGaN devices

  4. Yoshinao Kumagai
    TUAT, Japan
    Thermodynamics on HVPE of group-III nitrides

  5. Tomasz Sochacki
    IHPP PAS, Poland
    Recent progress in HVPE-GaN growth on ammonothermally grown GaN seeds

  6. Xinqiang Wang
    Peking University, China
    InN films with high electron mobility

  7. Ke Xu
    Suzhou Institute of Nano-tech and Nano-bionics, CAS.
    Growth of GaN substrate by HVPE, progress and challenge

  8. Marcin Zajac
    Ammono-Lab; IHPP PAS
    Basic ammonothermal growth of GaN

Characterization

  1. Martin Albrecht
    IKZ, Germany
    Tbd

  2. Rachel Oliver
    Cambridge University, UK
    Defects in nitride semiconductors

  3. Tomoyuki Tanikawa
    Institute for Materials Research, Tohoku University, Japan
    Two-photon-excitation photoluminescence and its recent progress

Optoelectronic Devices

  1. Nicolas Grandjean
    EPFL, Switzerland
    Burying surface defects in InGaN underlayer to increase blue LED efficiency

  2. Valentin Jmerik
    IOFFE Institute, Russia
    Plasma-assisted molecular beam epitaxy of monolayer-thick GaN/AlN heterostructures for high efficient sub-250-nm UV emitters

  3. Sylvia Hagedorn
    Ferdinand-Braun-Institut, Germany
    Influence of AlN/sapphire substrate properties on growth and performance of AlGaN-based UV LEDs

  4. Hideki Hirayama
    RIKEN, Japan
    Recent progress of AlGaN deep-UV LEDs by increasing light-extraction efficiency

  5. Zetian Mi
    University of Michigan, USA
    III-nitride core-shell nanostructures: From low threshold surface emitting lasers to high efficiency artificial photosynthesis

  6. Grzegorz Muziol
    IHPP PAS, Warsaw, Poland
    Long-living laser diodes grown by plasma assisted molecular beam epitaxy

  7. Siddharth Rajan
    The Ohio State University, USA
    Tunnel Junctions for Next Generation III-Nitride Optoelectronics

Electronic Devices

  1. Travis Anderson
    NRL, USA
    Vertical Power Devices Enabled by Bulk GaN Substrates

  2. Debdeep Jena
    Cornell University
    Growth, Physics, and Applications of Tunneling Nitride Structures

  3. Isik C. Kizilyalli
    Advanced Research Project Agency - Energy,
    U.S. Department of Energy
    Current and future directions in power electronic devices based on wide band-gap semiconductors

  4. Tomas Palacios
    MIT, USA
    GaN Nanostructures (or how to Take Transistor Linearity to new Levels)

  5. Lynn Petersen
    ONR, USA
    Navy Application of Silicon Carbide (SiC) Wide Bandgap (WBG) Semiconductors Enabling Future Power and Energy Systems

  6. Jun SUDA,
    Nagoya University, Japan
    Electrical characterization of homoepitaxial GaN layers for GaN vertical power devices

Theory

  1. Yoshihiro Kangawa
    RIAM, Kyushu University, Japan,
    Theoretical study: Impurity incorporation in GaN MOVPE

  2. Alexey Toropov
    IOFFE Institute of Physics, St Petersburg, Russia
    Optical properties of 1ML GaN in AlN: what happens beyond the envelope function approach

Honorary Patronage: Logo Ministry of Science and Higher Education Logo PAN Logo UW Logo Mazovia