| Nazwa oferty: | Postdoctoral Researcher |
| Organizacja: | Instytut Wysokich Ciśnień PAN |
| Laboratorium: | Laboratorium Epitaksji MBE, NL-14 |
| Lokalizacja: | al. Prymasa Tysiąclecia 98, Warszawa |
| Tytuł projektu: | Monolithic integration of multicolor micro- and nano-LED arrays |
| Kierownik projektu: | dr hab. inż. Grzegorz Muzioł, prof. IWC PAN |
| Przewidywane rozpoczęcie: | 01.06.2026 |
| Czas zatrudnienia: | 24 miesiące |
| Forma zatrudnienia: | umowa o pracę |
| Wymiar pracy: | pełen etat 40h/tydzień |
| Wynagrodzenie: | 13000-14000 PLN (brutto), ok. 9000-10000 PLN (netto) |
| Liczba stanowisk: | 1 |
| Termin nadsyłania zgłoszeń: | 15.05.2026, 12:00 |
Wymagania
Job offer is published also on Euraxcess: https://euraxess.ec.europa.eu/...
PhD or equivalent in Physics
Skills/Qualifications
Essential:
- PhD in physics, materials science, electronics, or related field
- Background in semiconductor physics or nanotechnology
- Experience in experimental research and data analysis
- Good written and spoken English (min. B2 level)
Desirable:
- Experience in epitaxy (MBE or MOVPE)
- Knowledge of GaN/InGaN materials
- Experience with optical spectroscopy techniques (PL, EL)
- Scientific publication record
Specific Requirements
Specific Requirements
- Ability to work independently and as part of a research team
- Strong motivation for scientific work
- Willingness to collaborate internationally
Languages
ENGLISH, level: Good
Zakres obowiązków
The Institute of High Pressure Physics PAS is offering a postdoctoral position for 24 months within the research project:
“Monolithic integration of multicolor micro- and nano-LED arrays”
The project aims to develop a novel technology for fabrication of monolithically integrated, addressable micro- and nano-LED arrays emitting visible light. The approach is based on molecular beam epitaxy (MBE) of (Al,In)GaN structures combined with advanced semiconductor processing techniques .
The developed technology will enable new classes of optoelectronic devices with applications in:
- high-resolution displays,
- Li-Fi optical communication,
- augmented and virtual reality systems,
- optogenetics and super-resolution microscopy .
The project is carried out in collaboration with leading international academic partners and an industrial partner.
Key Responsibilities
- Conduct research on GaN/InGaN-based micro- and nano-LED structures
- Perform epitaxial growth using molecular beam epitaxy (MBE)
- Design and optimize LED structures and tunnel junctions
- Participate in semiconductor
- Perform optical and electrical characterization of devices
- Publish research results in peer-reviewed journals
- Present results at international conferences
- Collaborate with international and industrial partners
Benefits
- Employment in a high-impact, innovative research project
- Access to state-of-the-art research infrastructure (MBE systems, cleanroom facilities)
- Collaboration with leading international research groups
- Opportunities for career development and international mobility
- Competitive salary of 13000-14000 PLN (gross), which after taxes is 9000-10000 PLN (net)
- Work environment based on equal opportunity and non-discrimination principles
Wymagane dokumenty
- Curriculum Vitae (including publication list)
- Motivation letter
- Copy of PhD diploma
- Two reference letters
Jak aplikować?
E-mail: recruitmentmbe@unipress.waw.pl
Selection process
The recruitment process will include:
- Formal evaluation of submitted documents
- Scientific evaluation of candidates’ achievements
- Interview (online or onsite)
Additional comments
The Institute ensures equal opportunities in recruitment and employment, regardless of gender, age, disability, ethnicity, religion or other personal characteristics, in accordance with its Gender Equality Plan and EU regulations.
Klauzura RODO
Wyrażam zgodę na przetwarzanie moich danych osobowych zawartych w dokumentach aplikacyjnych przez Instytut Wysokich Ciśnień Polskiej Akademii Nauk z siedzibą w Warszawie, ul. Sokołowska 29/37, przez okres 12 miesięcy od ich przekazania, w celu realizacji przyszłych procesów rekrutacyjnych.