| Name: | 2026 E-MRS Fall Meeting & Exhibit |
| Organizers: | Warsaw University of Technology |
| Conference chair: | Symposiums A, E and J are co-organized by IHPP scientists |
| Date: | 14 Sep 2026 17 Sep 2026 |
| Location: | Warsaw |
Conference description
This year’s E-MRS Fall Meeting & Exhibit Conference is organized at the University of Technology in Warsaw, Poland on 14-17 September 2026.
Researchers from the Institute of High Pressure Physics PAS are involved in the organization of three symposia of particular relevance to the wide-bandgap and nitride semiconductor community:
- Symposium A: New frontiers in wide-bandgap semiconductors and heterostructures for electronics, optoelectronics and sensing – III
Organizatorzy:
Elke MEISSNER - Fraunhofer Institute for Integrated Systems and Device Technology, Germany
Fabrizio ROCCAFORTE (Main organizer) - Consiglio Nazionale delle Ricerche – Institute for Microelectronics and Microsystems (CNR-IMM), Italy
Michal BOCKOWSKI - Institute of High Pressure Physics, Polish Academy of Science, Poland
Vanya DARAKCHIEVA - Lund University, Sweden - Symposium E: Wide and ultra-wide-bandgap semiconductors challenges: from materials to applications
Organizatorzy:Daniel ARAUJO - Universidad de Cádiz, Portugal
Henryk TEISSEYRE - Institute of Physics PAS, Institute of High Pressure Physics PAS, Poland
Matthias BICKERMANN- IKZ Berlin, Germany
Yvon CORDIER (Main organizer) - Univ. Côte d’Azur, CNRS, CRHEA, France - Symposium J: Emerging nitride materials with novel combinations of functional properties – fundamental properties, crystallization, and prospective applications
Organizatorzy:
Bernard GIL - National Center of Scientific Research (CNRS) - University Montpellier, France
Hiroshi AMANO - Nagoya University, Japan
Izabella GRZEGORY - Institute of High Pressure Physics, Polish Academy of Sciences, Poland
Saskia SCHIMMEL (Main organizer) - Chair of Electron Devices, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Germany
Together, these symposia will create a highly visible forum covering GaN, AlN, AlGaN, BN, SiC, Ga₂O₃, bulk crystal growth, epitaxy, defects, characterization, power and RF devices, optoelectronics, sensing, and emerging nitride materials. Importantly, Symposium J is co-organized by Professor Hiroshi Amano of Nagoya University, Nobel Prize laureate in Physics, which further underlines the scientific prestige and international attractiveness of this topic.
Abstract submission deadline: June 9, 2026
Join us in Warsaw for an exciting exchange of ideas and collaboration opportunities!
