Układ pomiarowy do detekcji głębokich stanów pułapkowych technikami spektroskopii DLTS (Deep Level Transient Spectroscopy), L-DLTS (Laplace DLTS), DLOS (Deep Level Optical Spectroscopy) oraz TAS (Thermal Admittance Spectroscopy).

The measurement system consists of: a) Janis VPF800 nitrogen cryostat (80-500K), b) Boonton fast capacitance meters (2 x 72B and 1 x 7200), c) phase-sensitive amplifier with MFLI impedance module (1mHz - 5 MHz), d) Lakeshore 335 temperature controller, HiCube80 turbo pump (<10-6 mbar), and e) M150 optical monochromator coupled with a high-performance Xenon lamp (XWS-65) operating in the range of 0.25 μm- 2.5 μm (DLOS system). The measurement capabilities include: detection of electrically active shallow and deep trap states (defects) in semiconductors, semiconductor compounds and structures, as well as perovskites, determination of trap parameters, i.e., concentration, effective cross section per capture, charge state (DLTS), and Franck-Condon energy (dFC) in the case of strong interaction of defects with the crystal lattice (DLOS), measurements of the doping level (ND) in conductive semiconductor layers and crystals using the non-invasive Hg probe C-V technique (295 K)