Epitaksja dwustronna: nowe podejście do integracji urządzeń półprzewodnikowych

The proposed project focuses on the development of innovative technology for integrating optoelectronic and electronic devices using double-sided molecular beam epitaxy (MBE). This project addresses the growing need for miniaturization and the introduction of new functionalities in integrated circuits. The main goal is to develop a technology that allows the simultaneous integration of various devices, such as transistors and light emitters, on both sides of a gallium nitride (GaN) substrate. This will enable the construction of more complex, efficient, and multifunctional electronic systems based on this material. GaN crystals are polar, meaning that opposing surfaces have different physicochemical properties. The use of double-sided epitaxy not only allows for more efficient use of space on the substrate and reduced production costs, but also enables the integration of devices on a single crystal that typically require fabrication on other substrates. The proposed innovative method for integrating GaN devices on opposite sides of a crystal will be based on two unique technologies, developed for years at the Institute of High Pressure Physics of the Polish Academy of Sciences. The first is a low-temperature MBE process for producing the layers that build nitride devices, and the second is a technology for manufacturing and polishing substrates, as well as preparing them for further growth. Combining these two techniques within a single unit creates unique opportunities for the development of double-sided epitaxy technology. The project will be implemented in collaboration with two leading international centers: Cornell University and the University of Helsinki, as well as with our Polish commercial partner, Seen Semiconductors, a manufacturer of semiconductor structures.