Inżynieria pól elektrycznych oraz domieszkowania na typ p w heterostrukturach InGaN/InGaN wytwarzanych metodą epitaksji z wiązek molekularnych z plazmą azotową - rozwój zielonych diod azotkowych

Aim of the project is to develop a process of producing high efficiency green emitting semiconductor diodes based on nitrides. The research conducted in the framework of the project will help in the development of high efficiency light emitters. For realization of the project we will exploit the unique capabilities of the plasma assisted molecular beam epitaxy (PAMBE). Production of laser diode structures with this technique, patented by Institute of High Pressure Physics PAS (IHPP PAS), offers few important advantages. Firstly, thanks to the feasibility of control of the layer thickness up to a single monolayer it is possible to produce quantum wells with a shape which compensate the detrimental effect of built in electrical fields which reduces the efficiency of structures emitting light in green wavelength region. The second advantage of using the PAMBE technique is the low growth temperature (while sustaining the high quality of the crystal). One of the biggest obstacles in the production of green emitting devices by other epitaxial techniques is the decompositions of the quantum wells in high growth temperatures needed to obtain high quality p-type material. In the project we will optimize the growth parameters of p-type layers (grown after the quantum wells) to keep the high quality of the crystal and not to damage the quantum wells. Additionally, use of efficient nitrogen source, recently developed by manufacturers of PAMBE reactors, will allow for development of high quality quantum wells for green laser diodes.