| Title: | Azotkowe diody elektroluminescencyjne emitujące pojedyncze fotony do zastosowań w technologiach kwantowych |
| Project leader: | Czesław Skierbiszewski |
| Laboratory: | Molecular Beam Epitaxy Laboratory (NL-14) |
| Call/Programme name: | OPUS |
| Project number: | 2022/45/B/ST7/03964 |
| Implementation date: | 10.01.2023 09.01.2026 |
| Implementing entity: | Institute of High Pressure Physics |
| Total funding granted: | 1 886 600 zł |
| Funding for the entity: | 1 886 600 zł |
| Funding institution: | National Science Center |
Project description
| 1. Research project objectives/Research hypothesis Single photon sources (SPSs), driven either optically or electrically, are key components for new quantum technologies like linear optical quantum computing, quantum cryptography (QC), quantum key distribution (QKD) and quantum memories [1]. QKD protocols have been successfully demonstrated in free-space and fiber-based optical communication systems. High-level practical implementation of the QKD protocol for Quantum LiFi links is based on application of electrically-pumped single photon light emitting diode (SP-LED). Therefore, there is extensive work on SPSs in many research groups leading towards demonstration of SP-LEDs operating at high temperatures. The majority of experimental demonstrations of single photon emission (SPE) using semiconductor quantum dots (QDs) are performed with the assistance of cryogenic cooling (typically using liquid helium at 4K). Wide bandgap III-nitrides QDs offer significant advantages since they enable high-temperature operation of solid-state SPSs. Within this Project we will investigate monolithic electrically driven nitride SP-LEDs grown by Plasma Assisted Molecular Beam Epitaxy (PAMBE). 2. Research project methodology We propose to study SP-LED designs where nitride micro-LED (μLED) is integrated with nitride nanowire (NW) containing InGaN QD. Here, single photon emission will be achieved by optical pumping of QD at the apex of NW, by light generated by μLED. The important novelty of our approach is to use special design of nitride μLEDs, in which we use tunnel junctions to define the μLEDs size (from 2 to 80 μm) [2]. We aim to develop scalable SP-LED design operating at room temperature for QKD protocols. We will also use special LED with improved carrier injection efficiency to the active region [3]. These diodes efficiently operate at cryogenic temperatures, which allows to use them as efficient optical pumps down to helium temperatures. Operation at cryogenic temperatures of SP-LEDs should improve properties of SPE from such sources, by reducing the influence of phonon-related linewidth broadening on single photon purity allowing to use this kind of devices also in quantum computing. The high quality of III-N epitaxy in our lab is supported by work on nitride laser diodes with extremely long lifetime [4]. 3. Expected impact of the research project on the development of science The growth of InN and InGaN QDs is not well developed in spite of efforts of many experimental groups. The successful control over the QD size, the In content will be crucial for nitride based SPSs. Demonstration of electrically driven SPSs at high temperatures will be important for practical applications in QKD - even though single photon purity at this temperature range is weak. For high purity SPE we propose device which can operate at cryogenic temperatures. Development of the growth technology of the InGaN QDs embedded in GaN NWs by PAMBE will be beneficial not only for the purpose of this Project – but in general it will allow to improve other optoelectronic devices like green, red and infrared nitride LEDs and LDs. References [1] N. Gisin, G. Ribordy, W. Tittel, H. Zbinden, Quantum cryptography, Reviews of Modern Physics 74(1) (2002) 145-195. [2] J. Slawinska, G. Muziol, M. Siekacz, H. Turski, M. Hajdel, M. Żak, A. Feduniewicz-Zmuda, C. Skierbiszewski, "Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes", Optics Express, accepted, June 2022 [3] M. Chlipala, H. Turski, M. Siekacz, K. Pieniak, K. Nowakowski-Szkudlarek, T. Suski, C. Skierbiszewski, Nitride lightemitting diodes for cryogenic temperatures, Opt Express 28(20) (2020) 30299-30308. [4] C. Skierbiszewski, H. Turski, G. Muziol, M. Siekacz, M. Sawicka, G. Cywiński, Z.R. Wasilewski, S. Porowski, Nitridebased laser diodes grown by plasma-assisted molecular beam epitaxy, Journal of Physics D: Applied Physics 47(7) (2014). |