Nitride Seminar
| Title: | Evaluation of GaN in Application for Radiation Detection |
| Speaker: | Dr. Yujia Liu (Chair of electronic devices, Friedrich-Alexander-University Erlangen-Nürnberg, Erlangen, Germany) |
| Date and time: | 10.03.2026, 15:00 |
| Format: | Online |
| Seminar language: | English |
| Location: | through Zoom platform |
| Organizers: | Tadek Suski, Piotr Perlin, Anna Kafar |
| Abstract link: | Download abstract (PDF) |
Abstract
Semiconductors enable the direct conversion of X-rays into electrical signals, improving spatial resolution and signal response speed, compared to scintillators. Today, the high-Z material CdTe is widely used in state-of-the-art medical imaging due to its strong X-ray absorption. Compared to CdTe, GaN offers lower absorption in high-energy X-ray; however, the low internal fluorescence yield and the low Compton scattering effect of GaN X-ray detectors could suppress secondary interactions. In addition, GaN as a wide bandgap semiconductor offers high breakdown field and chemical stability. In this talk, we discuss the possibilities and the challenges of GaN in application for X-ray detectors.
