Research topics
The Ammonothermal Synthesis Laboratory focuses on the growth of bulk GaN single crystals using the basic ammonothermal method. The processes are carried out under high pressure and temperature, and the research includes optimization of crystallization parameters and scaling the technology toward larger, higher-quality crystals. A key research direction is the analysis of all stages of the crystallization process to deepen understanding of the conditions and phenomena occurring inside the reactor, supported by computational methods and computer modelling.
The laboratory also covers the complete crystal processing and metrology workflow: orientation, cutting, polishing/CMP, and assessment of surface and structural quality using microscopy and X-ray diffraction techniques.
Team Members
Assistant Professor
Technician
Technologist
Technologist
PhD student
Technologist
Physicist
PhD student
Associate Professor
Technician
Chemist
Technologist
Technician
Technician
Assistant Professor
Technologist
Engineer
Technologist
Technician
Technician
MSc Eng. Anna Nowakowska - Szkudlarek
Technologist
Engineer
Technician
Chemist
Technician
Technologist
Physicist
Head of the Financial Analysis and Commercialization Department
Technician
Technologist
Projects
Mikołaj Amilusik
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July 2025 July 2028
Equipment
Computer modeling
Fabrication of materials and structures
Basic ammonothermal GaN crystallization reactors, φ=120 (4 units)
Fabrication of materials and structures
Basic ammonothermal GaN crystallization reactors, φ=100 (12 units)
Fabrication of materials and structures
Basic ammonothermal GaN crystallization reactors, φ=60 (4 units)
Fabrication of materials and structures
Basic ammonothermal GaN crystallization reactors, φ=40 (2 units)
Fabrication of materials and structures
Basic ammonothermal GaN crystallization reactors, φ=20 (5 units)
Characterization of materials and devices
Fabrication of materials and structures
Fabrication of materials and structures
Characterization of materials and devices
Delta Technologies X‑ray goniometer for crystal orientation (3 units)
Characterization of materials and devices
Fabrication of materials and structures
Fabrication of materials and structures
Fabrication of materials and structures
Fabrication of materials and structures
Characterization of materials and devices
Characterization of materials and devices
ATOS optical 3D metrology system (interferometry/structured light)
Characterization of materials and devices
Characterization of materials and devices
Fabrication of materials and structures