Owocna współpraca Instytutów Polskiej i Czeskiej Akademii Nauk

In the 2024–2026 period, the Institute of High Pressure Physics of the Polish Academy of Sciences (IHPP PAS) together with the Institute of Physics of the Czech Academy of Sciences, is carrying out a Polish Academy of Sciences (PAS) mobility project entitled “3-dimensional epitaxial structures of AlGaInN for new generations of optoelectronic devices.”

The project coordinators are Prof. Michał Leszczyński on the Polish side and Dr. Alice Hospodková on the Czech side.

The collaboration with the Institute of Physics of the Czech Academy of Sciences (CAS) and Charles University in Prague, is extremely important because of the advanced analytical capabilities available in Prague: Positron Annihilation Spectroscopy and sophisticated X-ray tools.

As part of this collaboration, two important publications were released in 2026, involving advanced materials research on gallium nitride (GaN)-based semiconductor structures. Their results are provide important insights for modern optoelectronics (e.g., LEDs and lasers).

1. Publication in ACS Applied Optical Materials demonstrates the impact of the surface morphology of the GaN buffer layer, located beneath the InGaN/GaN quantum well structure, on the formation of point defects within them and on their luminescence. 
   Self-assembled 3D morphology of buffer layers and influence on luminescence and defect formation in InGaN/GaN quantum wells Alice Hospodková, František Hájek, Tomáš Hubáček, Jakub Čížek, Filip Dominec, Karla Kuldová, Jiří Oswald, Vítězslav Jarý, Mariana Klementová, Lukáš Ondič, Vladimir Babin, Artur Lachowski, Michal Leszczyński, Ewa Grzanka, Maciej Oskar Liedke, Eric Hirschmann, Andreas Wagner, ACS Appl. Opt. Mater. (2026) 4 (3): 730–740. https://doi.org/10.1021/acsaom.5c00545
2. Publication in Materials Science in Semiconductor Processing addresses the question of whether vacancies can diffuse from the GaN substrate into the epitaxial layer grown on it using the MOVPE method.
   On the vacancy diffusion from ammonothermally grown GaN to GaN epilayer, F. Hájek, Jakub Čížek, Pavel Eichler, Robert Czernecki, Ewa Grzanka, Mike Leszczynski, Radek Fučík, Jan Kuriplach, T. Hubáček, P. Hubík, Robert Kucharski, Tomasz Sochacki, Roman Hrytsak, Maciej Oskar Liedke, Eric Hirschmann, Andreas Wagner, A. Hospodková Materials Science in Semiconductor Processing 212, 110788 (2026). https://doi.org/https://doi.or....

Both publications are available in Open Access.