| Title: | Nietypowa konfiguracja dyslokacji niedopasowania w układzie epitaksjalnym InGaN/GaN |
| Project leader: | Joanna Moneta |
| Laboratory: | Laboratory of Semiconductor Characterization (NL-12) |
| Call/Programme name: | MINIATURA |
| Project number: | 2024/08/X/ST11/00274 |
| Implementation date: | 08.08.2024 08.08.2025 |
| Implementing entity: | Institute of High Pressure Physics |
| Total funding granted: | 49 984 zł |
| Funding for the entity: | 49 984 zł |
| Funding institution: | National Science Center |
Project description
| High In-content layers are currently a hot topic in the research of nitride semiconductors and IHHP PAS, as one of the leading research centers dedicated to nitride semiconductors, has already addressed some aspects of the properties and growth technology of such epitaxial structures. At IHPP two projects related to relaxed InGaN layers were realized, both in collaboration with the group of Dr. Martin Albrecht from IKZ in Berlin. In 2015-1018 EU Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No. 642574 “Short Period Superlattices for Rational (In,Ga)N” SPRInG was conducted. Joanna Moneta – the person realizing the task in the current proposal was involved as an early-stage researcher. This project was focused on short period InGaN/GaN superlattices. To achieve higher indium uptake in quantum wells, relaxed InGaN buffer layers have been tested. In the frame of this project preliminary work on the misfit dislocation network was done – the type of misfit dislocations was determined. Another project devoted to studies of high In-content layers and their relaxation mechanism is currently realized (started in 2021) project OPUS-LAP UMO-2020/39/I/ST5/03379 “In-situ studies of plastic relaxation in InGaN buffers serving as substrates for overcoming current incorporation barriers in high In content nitride epitaxial layers”. This project focuses on the analysis of the dynamics of the dislocation movement by in-situ observations. Another task is to the study the optical properties of structures grown on relaxed InGaN. The research in the current proposal will focus on other aspects of the strain relaxation mechanism, i.e. misfit dislocation rotation phenomenon. |