Institute of High Pressure Physics

CaKFe₄As₄ is already superconducting without chemical doping, unlike most iron-based superconductors. This unique characteristic makes it an ideal platform for investigating the effects of selective elemental substitution within the superconducting FeAs layers.

In this context, Prof. Shiv J. Singh’s research team (from NL-6 Laboratory of Superconductors and Hydrogen Technologies) systematically investigated the influence of Mn substitution combined with high-pressure synthesis on the superconducting properties of CaKFe₄As₄. Mn-doped CaK(Fe_1-xMn_x)₄As₄ bulk samples were successfully synthesized using both conventional solid-state processing and high-pressure synthesis techniques.

Although Mn doping is generally known to suppress superconductivity in iron-based systems, the application of high-pressure synthesis was found to partially counteract this detrimental effect. As a result, a significant enhancement of the superconducting transition temperature (T_c) by approximately 3–7 K was observed for samples with 2–3% Mn substitution. Moreover, the study reveals unique behaviour in Mn-doped CaKFe₄As₄, where an increase in T_c can be achieved through the combined effects of controlled doping and high-pressure processing.

For more details, please refer to the publication: Manasa Manasa, Mohammad Azam, Tatiana Zajarniuk, Svitlana Stelmakh, Tomasz Cetner, Andrzej Morawski & Shiv J. Singh entitled “Enhancement of the Superconducting Transition Temperature in Mn-doped CaKFe₄As₄ Processed by the High gas-pressure and High-temperature Synthesis Method” Journal of Superconductivity and Novel Magnetism 39, 10 (2026). https://doi.org/10.1007/s10948-025-07115-2

Figure: A comparative summary of the superconducting transition temperatures (T_c) of CaK(Fe_1-xMn_x)₄As₄ bulks prepared by CSP at ambient pressure, and High gas pressure and high temperature synthesis (HP-HTS) methods, together with reported Mn-doped CaKFe₄As₄ single-crystals grown by the conventional method at ambient pressure [22], is shown with Mn concentration (x). The transition temperature values are determined from both the resistivity (R(T)) and magnetic (M(T)) measurements.

We are pleased to announce an invited talk by Dr. Marta Sawicka from the MBE Epitaxy laboratory of our Institute.

Title: Exploring electrochemical etching as a tool for cladding engineering in III-nitride laser diodes.

Dr. Sawicka will present at the UK Nitrides Consortium (UKNC) Winter Meeting on January 7-8, 2026, hosted by Swansea University (United Kingdom). The UKNC provides a vital platform for UK-based industrial and academic researchers to share ideas and advances in nitride semiconductors and related wide bandgap materials.

Detailed program of the conference can be found here.

The most innovative Polish projects were awarded during the Final Gala of the 26th edition of the “Polish Product of the Future” competition, organized by the Polish Agency for Enterprise Development (PARP), which took place on December 2, 2025, in Warsaw.

This year's edition saw 152 projects submitted, many of which already show high implementation potential. Three main prizes, ten distinctions, and special prizes were awarded.

The distinction in the category “Joint product of the future of higher education and science institutions and entrepreneurs” was awarded to the technology: Innovative electrodes for the deep electroerosion drilling process with increased service life, developed by the Institute of High Pressure Physics of the Polish Academy of Sciences and GEMET Elżbieta Czerwieniak. The technology uses severe plastic deformation to improve the properties of the electrode material, which allows for a significant increase in the efficiency of conventional electroerosion machining processes.

We would like to congratulate all the winners and honorees, especially the team from the Laboratory of Plastic Deformation Under High Pressure - Dr. Mariusz Kulczyk, Prof. IWCPAN, Dr. Jacek Skiba, and their colleagues from GEMET Elżbieta Czerwieniak company.

The catalog of winners of the 26th edition of the Polish Product of the Future Competition is available at the following link.

We are pleased to announce that Prof. Wojciech Knap from the Institute of High Pressure Physics PAS has become a laureate of the 2025 Foundation for Polish Science Prize in the field of mathematical, physical and engineering sciences. This distinction – often referred to as the “Polish Nobel Prize” – is considered the most prestigious scientific award in Poland.

The Prize was awarded for his pioneering development of new methods for detecting, amplifying and generating terahertz waves, which pave the way for ultra-fast wireless communication and a wide range of THz radiation applications in medicine, industry and telecommunications. Prof. Knap’s scientific achievements significantly strengthen Poland’s position among the world leaders in terahertz technology research.

Since 2013, Prof. Knap has been affiliated with the Institute of High Pressure Physics PAS, where he established the Terahertz Radiation Laboratory. On his initiative, the CENTERA Terahertz Research and Applications Center at IWC PAS was created, as well as CENTERA2 operating at the CEZAMAT Centre of the Warsaw University of Technology. These centres conduct advanced basic and application-oriented research on terahertz phenomena, co-financed, among others, by the Foundation for Polish Science.

The official award ceremony will take place on 3 December this year in Warsaw.

We warmly congratulate Professor Knap and the entire team of the Terahertz Radiation Laboratory and CENTERA, and wish them continued outstanding scientific success.

We are pleased to announce the 10th Winter Workshop Kalatówki - a unique scientific meeting dedicated to the physics and technology of group-III nitride semiconductors, including InGaN-based laser diodes, LEDs, quantum emitters, and novel optoelectronic devices. It organized on March 15-20, 2026.

The workshop continues the long-standing tradition of informal and inspiring discussions held in the beautiful scenery of the Tatra Mountains. Researchers are invited to share their latest results, exchange ideas, and strengthen collaborations in a relaxed atmosphere of the Kalatówki mountain lodge. As in the previous Workshop editions, attendance is by invitation only.

Topics include:

• Epitaxial growth and processing of III-N structures
• Optical and electrical characterization
• Laser diodes, micro-LEDs, and photonic integration
• Quantum devices and defects in nitrides
• Novel applications in communication, sensing, and metrology