| Name: | Reaktory HVPE |
| Contact person: | Dr inż. Tomasz Sochacki tsochacki@unipress.waw.pl |
| Laboratory: | NL-3 |
| Location: | ul. Sokołowska 29/37 Warszawa |
Research capabilities and technical data
HVPE (Halide Vapor Phase Epitaxy) reactor designed for bulk GaN crystallization — both undoped and doped with Si, Ge, C, Mn, and Fe — as well as for AlGaN growth, with capability for substrates up to 2 inches in diameter.