Name: Oprogramowanie pmicro do symulacji struktur półprzewodnikowych
Contact person: dr Konrad Sakowski konrad.sakowski@unipress.waw.pl
Laboratory: NL-2
Location: Sokołowska 29/37, Warszawa

Research capabilities and technical data

Advanced simulation tool based on a 1D drift-diffusion model, utilizing the composite discontinuous Galerkin method and a coupled Newton solver. The software is designed for simulating the electrical properties of light-emitting diodes (LEDs) and laser diodes based on gallium nitride (GaN) and related materials. It enables the calculation of electrostatic potential distributions, charge carrier densities, quasi-Fermi levels, and currents. It allows for modeling radiative and non-radiative recombination under bias voltage or monochromatic laser excitation

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